2N4857A Todos los transistores

 

2N4857A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N4857A
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
   Paquete / Cubierta: TO-18 TO-206AA

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2N4857A Datasheet (PDF)

 ..1. Size:51K  vishay
2n4856a 2n4857a 2n4858a.pdf

2N4857A
2N4857A

2N4856A/4857A/4858AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart VGS(off) V(BR)GSS IDSS Min rDS(on) Max ID(off) Typ tON TypNumber (V) Min (V) (mA) (W) (pA) (ns)2N4856A 4 to 10 40 50 25 5 42N4857A 2 to 6 40 20 40 5 42N4858A 0.8 to 4 40 8 60 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N4856A D Low Error Voltage D Analog Switches

 ..2. Size:82K  central
2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf

2N4857A

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.1. Size:43K  microsemi
mx2n4856 mx2n4857 mx2n4858 mx2n4859 mx2n4860 mx2n4861.pdf

2N4857A
2N4857A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/385 DEVICES LEVELS MQ = JAN Equivalent 2N4856 2N4858 2N4860 MX = JANTX Equivalent 2N4857 2N4859 2N4861MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted

 9.1. Size:278K  motorola
2n4856-59 2n4860-61.pdf

2N4857A
2N4857A

 9.2. Size:241K  optek
2n4854u.pdf

2N4857A
2N4857A

Product Bulletin JANTX, JANTXV, 2N4854USeptember 1996Surface Mount NPN/PNP Complementary TransistorsType JANTX, JANTXV, 2N4854U.058 (1.47)Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted)NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDCCeramic surface mount packageCollector-Base Voltage . . . . . .

 9.3. Size:135K  microsemi
2n3838 2n4854.pdf

2N4857A
2N4857A

TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector

 9.4. Size:134K  microsemi
2n4854u.pdf

2N4857A
2N4857A

TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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