2N4867 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4867
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.3 W
Tensión drenaje-fuente (Vds): 40 V
Tensión compuerta-fuente (Vgs): 2 V
Corriente continua de drenaje (Id): 0.0012 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Empaquetado / Estuche: TO-72
Búsqueda de reemplazo de MOSFET 2N4867
2N4867 Datasheet (PDF)
1.1. 2n4867-a 2n4868-a 2n4869-a.pdf 
Size:63K _interfet
Databook.fxp 1/14/99 12:00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/C Storage Temperature Range 65C to + 2
5.1. 2n4856-59 2n4860-61.pdf Size:278K _motorola
5.2. 2n4863.pdf Size:68K _central
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
5.3. 2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf Size:82K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
5.4. 2n4864.pdf Size:130K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V (Min) APPLICATIONS ·For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABS
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
