2N5198 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5198

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4 V

|Id|ⓘ - Corriente continua de drenaje: 0.007 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO-71

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2N5198 datasheet

 ..1. Size:65K  vishay
2n5196 2n5197 2n5198 2n5199.pdf pdf_icon

2N5198

2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D T

 9.1. Size:217K  motorola
2n5191 2n5192.pdf pdf_icon

2N5198

 9.2. Size:212K  motorola
2n5194 2n5195.pdf pdf_icon

2N5198

Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

 9.3. Size:230K  st
2n5191 2n5192.pdf pdf_icon

2N5198

2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure

Otros transistores... 2N4869A, 2N5020, 2N5021, 2N5114, 2N5115, 2N5116, 2N5196, 2N5197, IRFB4110, 2N5199, 2N5245, 2N5246, 2N5397, 2N5398, 2N5432, 2N5433, 2N5434