2N5459 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5459

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4.5 V

|Id|ⓘ - Corriente continua de drenaje: 0.016 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO-92

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2N5459 datasheet

 ..1. Size:129K  fairchild semi
 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf pdf_icon

2N5459

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE Source & Drain D D are interchangeable Mark 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 ..2. Size:59K  central
 2n5457 2n5458 2n5459.pdf pdf_icon

2N5459

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.1. Size:110K  motorola
 2n5457re.pdf pdf_icon

2N5459

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N Channel Depletion 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 3 Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc CASE 29 04, STYLE 5 Reverse Gate Source Voltage VGSR 25 Vdc TO 92 (TO 226AA)

 9.2. Size:138K  onsemi
 2n5457 2n5458.pdf pdf_icon

2N5459

MOSTRAR MÁS

Otros transistores... 2N5432, 2N5433, 2N5434, 2N5452, 2N5453, 2N5454, 2N5457, 2N5458, IRF630, 2N5460, 2N5461, 2N5462, 2N5515, 2N5516, 2N5517, 2N5518, 2N5519