2N5638 Todos los transistores

 

2N5638 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5638

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Resistencia drenaje-fuente RDS(on): 30 Ohm

Empaquetado / Estuche: TO-92

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2N5638 Datasheet (PDF)

1.1. 2n5638.pdf Size:26K _fairchild_semi

2N5638
2N5638

2N5638 N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 50 mA TJ, TST

1.2. 2n5638 2n5639.pdf Size:51K _onsemi

2N5638
2N5638

2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications. Features http://onsemi.com Low Drain-Source ON Resistance: RDS(on) = 30W for 2N5638 RDS(on) = 60W for 2N5639 1 DRAIN Low Reverse Transfer Capacitance - Crss = 4.

 5.1. 2n5630 2n6030 2n5631 2n6031.pdf Size:253K _motorola

2N5638
2N5638

Order this document MOTOROLA by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage High Power 2N5631 Transistors PNP . . . designed for use in high power audio amplifier applications and high voltage 2N6030 switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031 VCEO(sus) = 120 Vdc 2N5630, 2N6030 VCEO(sus) = 140 Vdc 2N5631, 2N6031 High D

5.2. 2n5639.pdf Size:26K _fairchild_semi

2N5638
2N5638

2N5639 N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 50 mA TJ, TST

 5.3. 2n5629 2n5630 2n6029 2n6030.pdf Size:67K _central

2N5638

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.4. 2n5631-d.pdf Size:198K _onsemi

2N5638
2N5638

2N5631 High-Voltage - High Power Transistors High-voltage - high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com High Collector Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc 16 AMPERE High DC Current Gain - @ IC = 8.0 Adc hFE = 15 (Min) POWER TRANSISTORS Low Collector-Emitter Satura

 5.5. 2n5633.pdf Size:11K _semelab

2N5638

2N5633 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

5.6. 2n5632.pdf Size:11K _semelab

2N5638

2N5632 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.7. 2n5634.pdf Size:11K _semelab

2N5638

2N5634 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.8. 2n5632 2n5633 2n5634.pdf Size:103K _jmnic

2N5638
2N5638

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL

5.9. 2n5631.pdf Size:99K _jmnic

2N5638
2N5638

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5631 DESCRIPTION ·With TO-3 package ·Complement to type 2N6031 ·High collector-emitter sustaining voltage ·High DC current gain ·Low collector-emitter saturation voltage APPLICATIONS ·For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1

5.10. 2n5629 2n5630.pdf Size:118K _jmnic

2N5638
2N5638

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VA

5.11. 2n5632 2n5633 2n5634.pdf Size:117K _inchange_semiconductor

2N5638
2N5638

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High DC current gain APPLICATIONS Ў¤ For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute max

5.12. 2n5631.pdf Size:117K _inchange_semiconductor

2N5638
2N5638

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6031 Ў¤ High collector-emitter sustaining voltage Ў¤ High DC current gain@IC=8A Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emi

5.13. 2n5629 2n5630.pdf Size:118K _inchange_semiconductor

2N5638
2N5638

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6029 2N6030 APPLICATIONS Ў¤ For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO I

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