2N6806 Todos los transistores

 

2N6806 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6806
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-3
     - Selección de transistores por parámetros

 

2N6806 Datasheet (PDF)

 ..1. Size:149K  international rectifier
2n6806 irf9230.pdf pdf_icon

2N6806

PD - 90548CIRF9230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806HEXFETTRANSISTORS JANTXV2N6806THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9230 -200V 0.80 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique p

 9.1. Size:197K  international rectifier
2n6802u.pdf pdf_icon

2N6806

PD - 91719BIRFE430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802UHEXFETTRANSISTORS JANTXV2N6802USURFACE MOUNT (LCC-18) [REF:MIL-PRF-19500/557]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE430 500V 1.50 2.5ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfacemount technology. Desinged

 9.2. Size:149K  international rectifier
2n6804 irf9130.pdf pdf_icon

2N6806

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 9.3. Size:130K  international rectifier
2n6800 irff330.pdf pdf_icon

2N6806

PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N7121 | AO8803 | FDC3612

 

 
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