J174 Todos los transistores

 

J174 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J174

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 85 Ohm

Encapsulados: TO-92

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J174 datasheet

 ..1. Size:30K  philips
 j174 j175 j176 j177 cnv 2.pdf pdf_icon

J174

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intend

 ..2. Size:728K  fairchild semi
 j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf pdf_icon

J174

J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units

 ..3. Size:56K  vishay
 j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf pdf_icon

J174

J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 SST174 J175 SST175 J176 SST176 J177 SST177 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 10 25 J/SST175 3 to 6 125 10 25 J/SST176 1 to 4 250 10 25 J/SST177 0.8 to 2.25 300 10 25 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J174

 0.1. Size:31K  philips
 pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf pdf_icon

J174

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int

MOSTRAR MÁS

Otros transistores... IPS0151S , ISL9N303AP3 , ISL9N303AS3ST , ISL9N303AS3 , J105 , J106 , J107 , JFTJ105 , AO4407A , J175 , J176 , J177 , MMBFJ175 , MMBFJ176 , MMBFJ177 , J201 , J202 .

 

 

 

 

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