J210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J210
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.35 W
Tensión drenaje-fuente (Vds): 25 V
Tensión compuerta-fuente (Vgs): 3 V
Corriente continua de drenaje (Id): 0.015 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Empaquetado / Estuche: TO-92
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J210 Datasheet (PDF)
1.1. 2sj210c.pdf 
Size:152K _upd
Preliminary Data Sheet 2SJ210C R07DS1278EJ0200 Rev.2.00 P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10
1.2. j210 j211 j212 1.pdf Size:100K _philips
DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 FEATURES PINNING - TO-92 (SOT54) High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source connectio
1.3. pmbfj210 pmbfj211 pmbfj212 1.pdf Size:100K _philips2
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and
1.4. j210.pdf Size:199K _fairchild_semi
J210 MMBFJ210 J211 MMBFJ211 J212 MMBFJ212 G S G TO-92 S SOT-23 D NOTE: Source & Drain D Mark: 62V / 62W / 62X are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90. Absolute Maximum Ratings* TA = 25C unless otherwi
1.5. 2sj210.pdf Size:365K _nec
1.6. j210 j211 sstj211 j212 sstj212.pdf Size:55K _vishay
J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 1 to 3 25 4 2 J/SSTJ211 2.5 to 4.5 25 6 7 J/SSTJ212 4 to 6 25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer J211/212, Gps 12 dB (t
1.7. 2sj210-3.pdf Size:1256K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-60V ● ID =-200m A ● RDS(ON) ＜ 10Ω (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 ● RDS(ON) ＜ 15Ω (VGS =-4V) +0.1 1.9-0.2 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD
1.8. 2sj210.pdf Size:964K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-60V 1 2 ● ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) ＜ 10Ω (VGS =-10V) +0.1 1.9-0.1 ● RDS(ON) ＜ 15Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -6
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
