J210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J210
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 3 V
|Id|ⓘ - Corriente continua de drenaje: 0.015 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de J210 MOSFET
J210 Datasheet (PDF)
j210 j211 j212 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETJ210; J211; J212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors J210; J211; J212FEATURES PINNING - TO-92 (SOT54) High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of drain and source co
j210.pdf

J210 MMBFJ210J211 MMBFJ211J212 MMBFJ212GSG TO-92S SOT-23D NOTE: Source & DrainDMark: 62V / 62W / 62X are interchangeableN-Channel RF AmplifierThis device is designed for HF/VHF mixer/amplifier andapplications where Process 50 is not adequate. Sufficientgain and low noise for sensitive receivers. Sourced fromProcess 90.Absolute Maximum Ratings* TA = 25C unless oth
j210 j211 sstj211 j212 sstj212.pdf

J/SSTJ210 SeriesVishay SiliconixN-Channel JFETsJ210 SSTJ211J211 SSTJ212J212PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J210 1 to 3 25 4 2J/SSTJ211 2.5 to 4.5 25 6 7J/SSTJ212 4 to 6 25 7 15FEATURES BENEFITS APPLICATIONSD Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerJ
pmbfj210 pmbfj211 pmbfj212 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr
Otros transistores... J177 , MMBFJ175 , MMBFJ176 , MMBFJ177 , J201 , J202 , MMBFJ201 , MMBFJ202 , IRF540N , MMBFJ210 , MMBFJ211 , MMBFJ212 , J270 , J271 , J304 , J305 , KSK30 .
History: SFS03R06NF | SKI03036 | SIS778DN | FQPF18N50V2 | NVATS4A103PZ
History: SFS03R06NF | SKI03036 | SIS778DN | FQPF18N50V2 | NVATS4A103PZ



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