J210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETJ210; J211; J212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors J210; J211; J212FEATURES PINNING - TO-92 (SOT54) High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of drain and source co

J210 MMBFJ210J211 MMBFJ211J212 MMBFJ212GSG TO-92S SOT-23D NOTE: Source & DrainDMark: 62V / 62W / 62X are interchangeableN-Channel RF AmplifierThis device is designed for HF/VHF mixer/amplifier andapplications where Process 50 is not adequate. Sufficientgain and low noise for sensitive receivers. Sourced fromProcess 90.Absolute Maximum Ratings* TA = 25C unless oth

J/SSTJ210 SeriesVishay SiliconixN-Channel JFETsJ210 SSTJ211J211 SSTJ212J212PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J210 1 to 3 25 4 2J/SSTJ211 2.5 to 4.5 25 6 7J/SSTJ212 4 to 6 25 7 15FEATURES BENEFITS APPLICATIONSD Excellent High Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerJ

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

Preliminary Data Sheet 2SJ210C R07DS1278EJ0200Rev.2.00P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 m@-4.5V100-20V @-2.5V -1.4A140m1. GATE m@-1.8V 2102. SOURCE 3. DRAIN APPLICATION FEATURE High Side Load Switch Leading Trench Technology for Low RDS(on) Charging Circuit Extending Battery Life

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2102 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 68m@4.5V20V 2.1A@2.5V115m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25

SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-60V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 10 (VGS =-10V) +0.11.9-0.1 RDS(ON) 15 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -6

SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 15 (VGS =-4V)+0.11.9-0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

VBJ2102Mwww.VBsemi.comP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application