MMBFJ210 Todos los transistores

 

MMBFJ210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBFJ210

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.225 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 3 V

Corriente continua de drenaje (Id): 0.015 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: SOT-23

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MMBFJ210 Datasheet (PDF)

4.1. mmbfj271.pdf Size:191K _fairchild_semi

MMBFJ210
MMBFJ210

June 2006 MMBFJ271 tm P-Channel Switch Features This device is designed for low level analog switching sample and hold G circuits and chopper stabilized amplifiers. Sourced from process 88. S D SOT-23 Mark : 62T Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate C

4.2. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi

MMBFJ210
MMBFJ210

January 2008 J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. TO-92 SOT-23 3 2 Marking Marking J201 MMBFJ201 : 62P J202 MMBFJ202 : 62Q 1 1 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximu

 4.3. mmbfj270.pdf Size:407K _fairchild_semi

MMBFJ210
MMBFJ210

August 2008 MMBFJ270 P-Channel Switch Features This device is designed for low level analog switching sample and hold G circuits and chopper stabilized amplifiers. Sourced from process 88. S D SOT-23 Mark : 61S Absolute Maximum Ratings (Note1) Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Ga

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