MMBFJ211 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBFJ211
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 4.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: SOT-23
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MMBFJ211 Datasheet (PDF)
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January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute
mmbfj270.pdf

August 2008MMBFJ270P-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 61SAbsolute Maximum Ratings (Note1) Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Fo
mmbfj271.pdf

June 2006MMBFJ271tmP-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 62TAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Forwar
Otros transistores... MMBFJ176 , MMBFJ177 , J201 , J202 , MMBFJ201 , MMBFJ202 , J210 , MMBFJ210 , IRF640 , MMBFJ212 , J270 , J271 , J304 , J305 , KSK30 , KSK595H , KSK596 .
History: SIS698DN | STS8201 | ET2316 | IRLR8103VPBF | HM3205B | IRFIB6N60APBF | FS10KM-5
History: SIS698DN | STS8201 | ET2316 | IRLR8103VPBF | HM3205B | IRFIB6N60APBF | FS10KM-5



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