J271 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J271
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 4.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Paquete / Cubierta: TO-92
- Selección de transistores por parámetros
J271 Datasheet (PDF)
j271.pdf

J271P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88.TO-9211. Drain 2. Gate 3. SourceAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage 30 VIGF Forward Gate Current 50 mA
j270 sst270 j271 sst271.pdf

J/SST270 SeriesVishay SiliconixP-Channel JFETsJ270 SST270J271 SST271PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST270 0.5 to 2.0 30 6 2J/SST271 1.5 to 4.5 30 8 6FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J270
j270 j271 sst270 sst271.pdf

P-Channel JFETCORPORATIONJ270 J271 / SST270 SST271FEATURES DESCRIPTION Surface Mount The J270/SST270 Series is an all-purpose amplifier fordesigns requiring P-channel operation. These devices featureAPPLICATIONS high gain, low noise and tight V limits for simple circuitGS(OFF)design. They are available in low-cost SOT-23 and TO-92 P-Channel Amplifierp
mmbfj271.pdf

June 2006MMBFJ271tmP-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 62TAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Forwar
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: JCS12N60ST | GSM2341 | RRL025P03 | NCE01P18L | WSP4067B | BSS123A | NP88N055DLE
History: JCS12N60ST | GSM2341 | RRL025P03 | NCE01P18L | WSP4067B | BSS123A | NP88N055DLE



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460