MMBF4091 Todos los transistores

 

MMBF4091 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBF4091

Código: 61J

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 30 Ohm

Empaquetado / Estuche: SOT-23

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MMBF4091 Datasheet (PDF)

1.1. pn4091 pn4092 pn4093 mmbf4091 mmbf4092 mmbf4093.pdf Size:55K _fairchild_semi

MMBF4091

5.1. mmbf4416lt1rev0d.pdf Size:292K _motorola

MMBF4091
MMBF4091

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4416LT1/D JFET MMBF4416LT1 VHF/UHF Amplifier Transistor NChannel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 31808, STYLE 10 DrainSource Voltage VDS 30 Vdc SOT23 (TO236AB) DrainGate Voltage VDG 30 Vdc GateSource Voltage VGS 30 Vdc Gate Current IG

5.2. mmbf4391lt1 mmbf4392lt1 mmbf4393lt1.pdf Size:139K _motorola

MMBF4091
MMBF4091

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4391LT1/D MMBF4391LT1 JFET Switching Transistors MMBF4392LT1 NChannel 2 SOURCE MMBF4393LT1 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDS 30 Vdc CASE 31808, STYLE 10 DrainGate Voltage VDG 30 Vdc SOT23 (TO236AB) GateSource Voltage VGS 30 Vdc Forward Gate Current IG(f

 5.3. mmbf4416.pdf Size:100K _fairchild_semi

MMBF4091
MMBF4091

April 2009 MMBF4416 N-Channel RF Amplifiers This device is designed for RF amplifiers. G Sourced from process 50. S SOT-23 D Mark: 6A Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Junction and Storage Temperature Range -55 to +150 C Electrica

5.4. pn4391 pn4392 pn4393 mmbf4391 mmbf4392 mmbf4393.pdf Size:708K _fairchild_semi

MMBF4091

 5.5. mmbf4416a.pdf Size:49K _fairchild_semi

MMBF4091
MMBF4091

March 2005 MMBF4416A N-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50. G S SOT-23 D Mark: 6BG Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150

5.6. pn4117 pn4118 pn4119 mmbf4117 mmbf4118 mmbf4119.pdf Size:128K _fairchild_semi

MMBF4091

5.7. mmbf4391lt1 mmbf4392lt1g mmbf4393lt1g.pdf Size:127K _onsemi

MMBF4091
MMBF4091

MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N-Channel http://onsemi.com Features 2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS 1 DRAIN Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc 3 Gate-Source Voltage VGS 30 Vdc 1 Forward Gate Current IG(f) 50 mAdc 2

5.8. mmbf4416lt1.pdf Size:149K _onsemi

MMBF4091
MMBF4091

MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc 1 DRAIN Gate-Source Voltage VGS 30 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Characteristic Symbol M

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