STP11NB40
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP11NB40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 400
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 10.7
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5
V
Qgⓘ - Carga de la puerta: 29
nC
trⓘ - Tiempo de subida: 10
nS
Cossⓘ - Capacitancia
de salida: 210
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55
Ohm
Paquete / Cubierta:
TO-220
- Selección de transistores por parámetros
STP11NB40
Datasheet (PDF)
..1. Size:362K st
stp11nb40.pdf 
STP11NB40STP11NB40FPN - CHANNEL 400V - 0.48 - 10.7A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP11NB40 400 V
8.1. Size:943K st
stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf
STB11NM80, STF11NM80STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, TO-247FeaturesRDS(on) Type VDSS RDS(on)*Qg IDmax313STB11NM802DPAK1STF11NM80TO-247800 V
8.2. Size:1155K st
stb11n52k3 stf11n52k3 stp11n52k3.pdf
STB11N52K3, STF11N52K3 STP11N52K3N-channel 525 V, 0.41 , 10 A SuperMESH3 Power MOSFET in DPAK,TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max. ID PwSTB11N52K3 125 W 3 32 21 1STF11N52K3 525 V
8.3. Size:1017K st
stb11n65m5 std11n65m5 stf11n65m5 stp11n65m5.pdf
STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5DatasheetN-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages FeaturesTABTAB32 VDS @311RDS(on)max. IDOrder codeDPAK2D PAKTjmax.TABSTB11N65M5STD11N65M5710 V 0.48 9 A3231 STF11N65M521TO-220TO-220FPSTP11N65M5D(2, TAB) Extremel
8.4. Size:624K st
stb11nm60t4 stp11nm60.pdf
STB11NM60T4, STP11NM60DatasheetN-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in DPAK and TO-220 packagesFeaturesVDSSTABRDS(on) max. IDTAB Order codes Package(@ TJmax)STB11NM60T4 DPAK3650 V 0.45 11 A132 STP11NM60 TO-220D PAK TO-220 21 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceD(2
8.5. Size:388K st
stp11nc40.pdf
STP11NC40, STP11NC40FPN-CHANNEL 400V - 0.44 - 9.5A TO-220/TO-220FPPowerMESHII Power MOSFETTYPE VDSS RDS(on) ID PwSTP11NC40 400 V
8.6. Size:585K st
stp11nk50z.pdf
STP11NK50Z - STP11NK50ZFPSTB11NK50ZN-CHANNEL 500V - 0.48 - 10A TO-220/TO-220FP/D2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTB11NK50Z 500 V
8.8. Size:1258K st
std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
8.9. Size:486K st
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf
STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
8.10. Size:579K st
stp11nk40z.pdf
STP11NK40Z - STP11NK40ZFPSTB11NK40ZN-CHANNEL 400V - 0.49 - 9A TO-220/TO-220FP/D2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP11NK40Z 400 V
8.11. Size:349K st
stp11nm60fd.pdf
STP11NM60FDSTP11NM60FDFP - STB11NM60FD-1N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAKFDmeshPower MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTP11NM60FD 600 V
8.12. Size:493K st
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf
STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
8.13. Size:1172K st
std11n65m2 stp11n65m2 stu11n65m2.pdf
STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation
8.14. Size:1276K st
stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTAB2VDSS @ RDS(on) 2 3Order codes ID 31TJmax max 132DPAKD2PAK 1STB11N65M5TO-220FPSTD11N65M5TABSTF11N65M5 710 V
8.15. Size:632K st
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
8.16. Size:632K st
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
8.17. Size:1258K st
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
8.18. Size:249K st
stp11nm60a.pdf
STP11NM60ASTP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP11NM60A 600 V
8.19. Size:635K st
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
8.20. Size:501K st
stb11nk40z stp11nk40zfp stp11nk40z.pdf
STB11NK40Z, STP11NK40ZFPSTP11NK40ZN-channel 400 V, 0.49 , 9 A, TO-220, TO-220FP, D2PAKZener-protected SuperMESHTM Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB11NK40Z 400V
8.21. Size:580K st
stp11nk40z stp11nk40zfp stb11nk40z.pdf
STP11NK40Z - STP11NK40ZFPSTB11NK40ZN-CHANNEL 400V - 0.49 - 9A TO-220/TO-220FP/D2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP11NK40Z 400 V
8.22. Size:904K st
stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf
STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V
8.23. Size:360K st
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf
STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
8.24. Size:678K st
std11nm50n stf11nm50n stp11nm50n.pdf
STD11NM50NSTF11NM50N, STP11NM50NN-channel 500 V, 0.4 , 9 A MDmesh II Power MOSFETin DPAK, TO-220FP and TO-220FeaturesRDS(on) Type VDSS @TJmax ID3max13STD11NM50N2DPAK1STF11NM50N 550 V
8.25. Size:750K st
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf
STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V
8.26. Size:413K st
stb11nk50z stp11nk50zfp stp11nk50z.pdf
STB11NK50Z - STP11NK50ZFPSTP11NK50ZN-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D2PAKZener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTB11NK50Z 500 V
8.27. Size:367K st
stp11nm60 stp11nm60fp stb11nm60 stb11nm60-1.pdf
STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
8.28. Size:381K st
stp11nm80.pdf
STP11NM80 - STB11NM80STF11NM80 - STW11NM80N-CHANNEL 800V - 0.35 - 11A TO-220/FP/D2PAK/TO-247MDmeshPower MOSFETTARGET DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTP11NM80 800 V
8.29. Size:539K st
stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf
STB11NM65N - STF11NM65NSTI11NM65N-STP11NM65N-STW11NM65NN-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@TJmax) Max32312STI11NM65N 710 V
8.30. Size:205K inchange semiconductor
stp11nm60.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP11NM60FEATURESTypical R (on)=0.4DSLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
8.31. Size:260K inchange semiconductor
stp11n65m5.pdf
isc N-Channel MOSFET Transistor STP11N65M5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
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