PN4302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PN4302
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
|Id|ⓘ - Corriente continua de drenaje: 0.005 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de PN4302 MOSFET
PN4302 Datasheet (PDF)
pn4302.pdf

PN4302N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG
fpn430.pdf

FPN430FPN430ATO-226CBEPNP Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 2.0 A continuous.Sourced from Process PB.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 35 VVEBO Emitter-Base
pn4303.pdf

PN4303N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG
Otros transistores... P1086 , P1087 , STP11NB40 , STP11NB40FP , STP9NB50 , STP9NB50FP , PF5102 , PF5103 , 10N65 , PN4303 , PN4861 , PN5432 , PN5433 , PN5434 , TIS73 , TIS74 , TIS75 .
History: WMQ090N04LG2 | SI4435BDY | NTGS4111PT
History: WMQ090N04LG2 | SI4435BDY | NTGS4111PT



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