U310 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

U310 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: U310

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6.5 V

|Id|ⓘ - Corriente continua de drenaje: 0.06 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 35 Ohm

Encapsulados: TO-52

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U310 datasheet

..1. Size:96K vishay
j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf pdf_icon

J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10

..2. Size:98K siliconix
j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf pdf_icon

J/SST/U308 Series N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 1 to 6.5 25 8 12 J309 1 to 4 25 10 12 J310 2 to 6.5 25 8 24 SST308 1 to 6.5 25 8 12 SST309 1 to 4 25 10 12 SST310 2 to 6.5 25 8 24 U309 1 to 4 25 10 12

0.1. Size:210K 1
irfu310a irfr310a.pdf pdf_icon

0.2. Size:161K motorola
mmbfu310lt1rev0d.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFU310LT1/D JFET Transistor N Channel MMBFU310LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Drain Source Voltage VDS 25 Vdc Gate Source Voltage VGS 25 Vdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Gate Current IG 10 mAdc THERMAL CHARACTERISTICS Ch

0.3. Size:286K international rectifier
irlu3103pbf irlr3103pbf.pdf pdf_icon

PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

0.4. Size:322K international rectifier
irlr3105pbf irlu3105pbf.pdf pdf_icon

PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature Fast Switching RDS(on) = 0.037 G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 25A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie

0.5. Size:286K international rectifier
irlr3103pbf irlu3103pbf.pdf pdf_icon

0.6. Size:1830K international rectifier
irfr310pbf irfu310pbf.pdf pdf_icon

PD - 95028A IRFR310PbF IRFU310PbF Lead-Free 12/10/04 Document Number 91272 www.vishay.com 1 IRFR/U310PbF Document Number 91272 www.vishay.com 2 IRFR/U310PbF Document Number 91272 www.vishay.com 3 IRFR/U310PbF Document Number 91272 www.vishay.com 4 IRFR/U310PbF Document Number 91272 www.vishay.com 5 IRFR/U310PbF Document Number 91272 www.vishay.com 6 IRFR/U3

0.7. Size:818K vishay
irfr310pbf irfu310pbf sihfr310 sihfu310.pdf pdf_icon

IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast Switching Qgd (nC) 6.5 Ful

0.8. Size:1412K vishay
irfr310 irfu310 sihfr310 sihfu310.pdf pdf_icon

IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Surface Mount (IRFR310/SiHFR310) Qg (Max.) (nC) 12 COMPLIANT Straight Lead (IRFU310/SiHFU310) Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5 Configuration S

0.9. Size:103K onsemi
mmbfu310lt1.pdf pdf_icon

MMBFU310LT1G JFET Transistor N-Channel Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 Stresses exceeding Maximum Ratings may damage the device. Maximum SOT-23 (TO-236AB)

0.10. Size:71K intersil
hplr3103 hplu3103.pdf pdf_icon

HPLR3103, HPLU3103 Data Sheet July 1999 File Number 4501.2 52A, 30V, 0.019 Ohm, N-Channel Logic Features Level, Power MOSFETs Logic Level Gate Drive These are N-Channel enhancement mode silicon gate 52A , 30V power field effect transistors. They are advanced power Low On-Resistance, rDS(ON) = 0.019 MOSFETs designed, tested, and guaranteed to withstand a specified leve

0.11. Size:1061K kec
ku310n10p.pdf pdf_icon

KU310N10P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 34A

0.12. Size:1057K kec
ku310n10d.pdf pdf_icon

KU310N10D SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 27A

0.13. Size:1278K kec
ku310n10f.pdf pdf_icon

KU310N10P/F SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description KU310N10P This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 1

0.14. Size:408K cet
ceu3100 ced3100.pdf pdf_icon

CED3100/CEU3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 51A , RDS(ON) = 10m @VGS = 10V. RDS(ON) = 17m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS

0.15. Size:291K samhop
stu310dh.pdf pdf_icon

STU310DH SamHop Microelectronics Corp. May,28,2007 Dual Enhancement Mode Field Effect Transistor ( NandP Channel) (N-C hannel) (P PRODUCT S UMMARY PRODUC T S UMMARY -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m W ) Max W 20 @ VGS =10V 30 @ VGS =-10V -30V -15A 30V 19A 28 @ VGS =4.5V 44 @ VGS =-4.5V D1 D2 D1/D2 G 1 G 2 S1 G1 S2 S 1 N-ch S 2 P-ch G2 TO-252-4L

0.16. Size:461K huashuo
hsu3103.pdf pdf_icon

HSU3103 P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DS The HSU3103 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and R 20 m DS(ON),max gate charge for most of the synchronous buck converter applications. I -35 A D The HSU3103 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full f

0.17. Size:2237K cn vbsemi
irlu3103p.pdf pdf_icon

IRLU3103P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To

0.18. Size:260K inchange semiconductor
irlu3105.pdf pdf_icon

isc N-Channel MOSFET Transistor IRLU3105 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

0.19. Size:296K inchange semiconductor
irfu310.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFU310 FEATURES Low drain-source on-resistance RDS(ON) 3.6 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

0.20. Size:261K inchange semiconductor
irlu3103.pdf pdf_icon

isc N-Channel MOSFET Transistor IRLU3103 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

Otros transistores... TIS74 , TIS75 , U1898 , J308 , SST308 , SST309 , SST310 , U309 , 2N60 , VN0610L , VN10KE , VN10KM , VN2222L , TN0601L , VN0606L , VN66AFD , 2SK2671 .