SMK0170I Todos los transistores

 

SMK0170I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMK0170I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 4.1 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 17.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 15 Ohm
   Paquete / Cubierta: I-PAK

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SMK0170I Datasheet (PDF)

 ..1. Size:349K  auk
smk0170i.pdf

SMK0170I
SMK0170I

SMK0170IAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=700V(Min.) D Low Crss : Crss=2.6pF(Typ.) Low gate charge : Qg=4.1nC(Typ.) Low RDS(ON) : RDS(ON)=15(Max.) G Ordering Information G D Type No. Marking Package Code S S SMK0170I SMK0170 I-PAKI-PAK Marking Diagram Column 1 : Devi

 7.1. Size:539K  auk
smk0170.pdf

SMK0170I
SMK0170I

SMK0170Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=700V(Min.) D Low Crss : Crss=2.6pF(Typ.) Low gate charge : Qg=4.1nC(Typ.) Low RDS(on) : RDS(on)=15(Max.) G Ordering Information Type No. Marking Package Code G D S S SMK0170 SMK0170 TO-92TO-92 Marking Diagram SMK Column 1,2

 9.1. Size:533K  auk
smk0160i.pdf

SMK0170I
SMK0170I

SMK0160IAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=600V(Min.) D Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=3.9nC(Typ.) Low RDS(on) : RDS(on)=11.5(Max.) G Ordering Information Type No. Marking Package Code G D S S SMK0160I SMK0160 I-PAKI-PAK Marking Diagram SMK Colum

 9.2. Size:537K  auk
smk0160.pdf

SMK0170I
SMK0170I

SMK0160Advanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=600V(Min.) D Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=3.9nC(Typ.) Low RDS(on) : RDS(on)=11.5(Max.) G Ordering Information Type No. Marking Package Code G D S S SMK0160 SMK0160 TO-92TO-92 Marking Diagram SMK Column 1,

 9.3. Size:489K  auk
smk0160d.pdf

SMK0170I
SMK0170I

SMK0160DAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=600V(Min.) D Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=3.9nC(Typ.) D Low RDS(on) : RDS(on)=11.5(Max.) G Ordering Information G Type No. Marking Package Code S S SMK0160D SMK0160 TO-252TO-252 Marking Diagram SMK C

 9.4. Size:484K  auk
smk0160is.pdf

SMK0170I
SMK0170I

SM 160ISMK01 S Advan ower MOSFEnced N-Ch Po ET SW NG REG OR APPLICATIOWITCHIN GULATO ON Feeatures Drain-Sour own voltage 0V (Min.) rce breakdo e: BVDSS=600 Low gate c .) charge: Qg=3.9nC (Typ. Low drain- 5 (Max.) -source On resistance: RDS(on)=11.5 100% avalaanche tested RoHS comp ce pliant devicOr nformatiordering In on G D S Part N

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