SMK0965FJ Todos los transistores

 ..1. Size:408K  auk
 smk0965fj.pdf

SMK0965FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage BVDSS=650V(Min.) D Low Crss Crss=16pF(Typ.) Low gate charge Qg=35nC(Typ.) Low RDS(on) RDS(on)=0.85 (Max.) G Ordering Information G Type No. Marking Package Code D S S TO-220F-3L SMK0965FJ SMK0965 TO-220F-3L (J Forming) Ma

 6.1. Size:742K  auk
 smk0965f.pdf

SMK0965F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage BV =650V(Min.) DSS Low C C =16pF(Typ.) rss rss Low gate charge Qg=35nC(Typ.) Low R R =0.85 (Max.) DS(on) DS(on) G D S Ordering Information Part Number Marking Package TO-220F-3L SMK0965F SMK0965 TO-220F-3L Marking Diagram AUK = Manufacture Logo

 6.2. Size:472K  auk
 smk0965fc.pdf

SMK0965FC Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage BVDSS=650V(Min.) D Low Crss Crss=16pF(Typ.) Low gate charge Qg=35nC(Typ.) Low RDS(on) RDS(on)=0.85 (Max.) G Ordering Information Type No. Marking Package Code G D S S TO-220F-3L SMK0965FC SMK0965 TO-220F-3L (C Forming) Marki

 9.1. Size:574K  auk
 smk0990ci.pdf

SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage BV =900V (Min.) DSS Low gate charge Q =52nC (Typ.) g Low drain-source On resistance R =1.4 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-3P Part Number Marking Package SMK0990CI SMK0990 TO-3P

 9.2. Size:571K  auk
 smk0990fd.pdf

SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage BV =900V DSS Low gate charge Q =52nC (Typ.) g Low drain-source On resistance R =1.4 (Max.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SMK0990FD SMK0990 TO-220F-

 9.3. Size:236K  inchange semiconductor
 smk0990ci.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SMK0990CI FEATURES New revolutionary high voltage technology With TO-3PN package Drain-Source breakdown voltage BV =900V(Min.) DSS Low drain-source On resistance R (on)=1.4 (Max.) DS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch