SMN04L20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SMN04L20D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.25 V
   Qgⓘ - Carga de la puerta: 4 nC
   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
   Paquete / Cubierta: TO-252

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SMN04L20D Datasheet (PDF)

..1. Size:417K auk
smn04l20d.pdf

SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BVDSS=200V (Min.) Low gate charge: Qg=4nC (Typ.) D Low drain-source On-Resistance: RDS(on)=1.35 (Max.) 100% avalanche tested RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SMN04L20D SMN04L20 TO-252

6.1. Size:425K auk
smn04l20is.pdf

SM L20ISMN04L S Logic Le ower MOSFEevel N-Ch Po ET 200V LOGIC N-Channnel MOSFET Feeatures Drain-Sour own voltage 0V (Min.) rce breakdo e: BVDSS=200 Low gate ccharge: Qg=4nC (Typ.) Low drain- : RDS(on)=1.35 (Max.) -source On-Resistance: 100% avalaanche tested RoHS comp ce pliant devicOr nformatiordering In on G D S Part Num Marking P

9.1. Size:233K philips
psmn045-80ys.pdf

PSMN045-80YSN-channel LFPAK 80 V 45 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

9.2. Size:87K philips
psmn040-200w.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 AgRDS(ON) 40 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

9.3. Size:347K nxp
psmn040-100mse.pdf

PSMN040-100MSEN-channel 100 V 36.6 m standard level MOSFET in LFPAK33designed specifically for high power PoE applications26 March 2013 Product data sheet1. General descriptionNew standards and proprietary approaches are enabling Power-over-Ethernet (PoE)systems capable of delivering up to 90W to each powered device (PD). Such solutionsplace increased demands on the power sourci

9.4. Size:352K nxp
psmn041-80yl.pdf

PSMN041-80YLN-channel 80 V 41 m logic level MOSFET in LFPAK561 May 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) inLFPAK56 package. This product has been designed and qualified for use in a wide rangeof industrial, communications and domestic equipment.2. Features and benefits High efficiency due

9.5. Size:573K auk
smn0470f.pdf

SMN0470F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =700V (Min.) DSS Low gate charge: Q =13nC (Typ.) g Low drain-source On resistance: R =2.36 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0470F SMN0470 TO

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