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SUN0760F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUN0760F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220F
 

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SUN0760F Datasheet (PDF)

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 sun0760f.pdf pdf_icon

SUN0760F

SUN0760F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.05 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0760F SUN0760 TO

 7.1. Size:460K  auk
 sun0760i2.pdf pdf_icon

SUN0760F

SUN0760I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.05 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0760I2 SUN0760 I2-P

 8.1. Size:514K  auk
 sun0765f.pdf pdf_icon

SUN0760F

SUN0765F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.1 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=5.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0765F SUN0765 TO

 8.2. Size:461K  auk
 sun0765i2.pdf pdf_icon

SUN0760F

SUN0765I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.1 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=5.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0765I2 SUN0765 I2-PA

MOSTRAR MÁS

Otros transistores... SUN0260F , SUN0460D , SUN0460F , SUN0460I2 , SUN0465F , SUN0465I2 , SUN0550D , SUN0550F , IRF730 , SUN0760I2 , SUN0765F , SUN0765I2 , SUN1060F , SUN1060I2 , 2N7002B , 2N7002KU , SNN01Z10D .

History: IRF7380Q | WMM15N65F2 | NCE4005 | NCEP029N10D | NCE2304 | SSFD4024

 

 
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