SUN0765I2 Todos los transistores

 

SUN0765I2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUN0765I2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: I2-PAK

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SUN0765I2 datasheet

 ..1. Size:461K  auk
 sun0765i2.pdf pdf_icon

SUN0765I2

SUN0765I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=1.1 (Typ.) Low gate charge Qg=18nC (Typ.) Low reverse transfer capacitance Crss=5.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0765I2 SUN0765 I2-PA

 7.1. Size:514K  auk
 sun0765f.pdf pdf_icon

SUN0765I2

SUN0765F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=1.1 (Typ.) Low gate charge Qg=18nC (Typ.) Low reverse transfer capacitance Crss=5.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0765F SUN0765 TO

 8.1. Size:460K  auk
 sun0760i2.pdf pdf_icon

SUN0765I2

SUN0760I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=1.05 (Typ.) Low gate charge Qg=18nC (Typ.) Low reverse transfer capacitance Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0760I2 SUN0760 I2-P

 8.2. Size:519K  auk
 sun0760f.pdf pdf_icon

SUN0765I2

SUN0760F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=1.05 (Typ.) Low gate charge Qg=18nC (Typ.) Low reverse transfer capacitance Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0760F SUN0760 TO

MOSTRAR MÁS

Otros transistores... SUN0460I2 , SUN0465F , SUN0465I2 , SUN0550D , SUN0550F , SUN0760F , SUN0760I2 , SUN0765F , 7N60 , SUN1060F , SUN1060I2 , 2N7002B , 2N7002KU , SNN01Z10D , SNN01Z10Q , SNN01Z60Q , SNN0310Q .

History: SPA11N60C3E8185 | BSC090N03LSG | IRFU3708PBF

 

 

 

 

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