2N6962 Todos los transistores

 

2N6962 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6962

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 1100 pF

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TO210

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2N6962 Datasheet (PDF)

1.1. 2n6962.pdf Size:270K _siliconix

2N6962
2N6962



5.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf Size:298K _rca

2N6962

5.2. 2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf Size:1095K _ixys

2N6962
2N6962

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 5.3. 2n696 2n697.pdf Size:61K _microsemi

2N6962
2N6962

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Junction

Otros transistores... 2N6914A , 2N6914B , 2N6915 , 2N6916 , 2N6917 , 2N6960 , 2N6961 , 2N6961A , 2SK3562 , 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX , 2N6966JANTXV , 2N6967 , 2N6967JANTX .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |

 

 

 
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