9N90 Todos los transistores

 

9N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 9N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 240 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 120 nS

Conductancia de drenaje-sustrato (Cd): 175 pF

Resistencia drenaje-fuente RDS(on): 1.05 Ohm

Empaquetado / Estuche: TO-3P_TO-247_TO-220F_TO-220F1_TO-220F2

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9N90 Datasheet (PDF)

1.1. tmp9n90 tmpf9n90.pdf Size:403K _update

9N90
9N90

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A  Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N

1.2. fmv09n90e.pdf Size:454K _upd-mosfet

9N90
9N90

FMV09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0±0.

 1.3. msf9n90.pdf Size:811K _upd-mosfet

9N90
9N90

MSF9N90 900V N-Channel MOSFET Description The MSF9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charg

1.4. ssm09n90gw.pdf Size:628K _upd-mosfet

9N90
9N90

SSM09N90GW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90GW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.2Ω suitable for high voltage applications such as AC/DC converters and offline power supplies. I 8.6A D The SSM09N90GW is in a TO-247 (TO-3P) package, Pb-free; RoHS-compli

 1.5. fmr09n90e.pdf Size:452K _upd-mosfet

9N90
9N90

FMR09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0±0.5V) H

1.6. tman9n90.pdf Size:428K _upd-mosfet

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9N90

TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A  Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V

1.7. msu9n90p.pdf Size:369K _upd-mosfet

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9N90

900V/9A Power MOSFET (N-Channel) MSU9N90P 900V/9A Power MOSFET (N-Channel) General Description • MSU9N90P is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance. This device is well suited for use as a load switch or in PWM applications.

1.8. fmh09n90e.pdf Size:463K _upd-mosfet

9N90
9N90

FMH09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0±0.5V)

1.9. ssm09n90cgw.pdf Size:624K _upd-mosfet

9N90
9N90

SSM09N90CGW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90CGW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.4Ω suitable for high voltage applications such as AC/DC converters and offline power supplies. I 7.6A D The SSM09N90CGW is in a TO-247 (TO-3P) package, Pb-free; RoHS-com

1.10. tman9n90az.pdf Size:451K _upd-mosfet

9N90
9N90

TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 9A <1.4W  Improved dv/dt capability  Improved ESD performance  RoHS compliant  JEDEC Qualification Ordering Part Number Package Marking Remark TMAN9N90AZ TO-3PN TMAN9N90AZ RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 900 V Gate-Source Vo

1.11. msw9n90.pdf Size:514K _upd-mosfet

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9N90

Preliminary MSW9N90 900V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charge (Typical 45nC) • Improved dv/dt Capability, Hi

1.12. tsm9n90ci tsm9n90cz.pdf Size:419K _update_mosfet

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9N90

 TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

1.13. hfa9n90.pdf Size:192K _update_mosfet

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9N90

July 2013 BVDSS = 900 V RDS(on) typ HFA9N90 ID = 9.0 A 900V N-Channel MOSFET TO-247 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Low

1.14. cs9n90fa9d.pdf Size:771K _update_mosfet

9N90
9N90

Silicon N-Channel Power MOSFET R ○ CS9N90F A9D General Description: VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.15. tsm9n90cn.pdf Size:311K _update_mosfet

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9N90

 TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

1.16. cs9n90anhd.pdf Size:785K _update_mosfet

9N90
9N90

Silicon N-Channel Power MOSFET R ○ CS9N90 ANHD General Description: VDSS 900 V CS9N90 ANHD, the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.95 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.17. tsa9n90m.pdf Size:376K _update-mosfet

9N90
9N90

TSA9N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s • 9.0A,900V,Max.RDS(on)=1.40Ω @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to • Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching • High ruggedness performance, a

1.18. fqp9n90c fqpf9n90c.pdf Size:842K _fairchild_semi

9N90
9N90

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fast swit

1.19. fqpf9n90ct.pdf Size:840K _fairchild_semi

9N90
9N90

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45nC) planar stripe, DMOS technology. • Low Crss ( typical 14pF) This advanced technology has been especially tailored to

1.20. fqa9n90 f109.pdf Size:1054K _fairchild_semi

9N90
9N90

April 2013 FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω Features Description • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar • Low Gate Charge (Typ. 55 nC) stripe and DMOS technology. This advanced MOSFET • Low Crss (Typ. 25 pF) techn

1.21. fqa9n90c f109.pdf Size:804K _fairchild_semi

9N90
9N90

July 2007 QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description 9A, 900V, RDS(on) = 1.4? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fast switching

1.22. fqa9n90c.pdf Size:799K _fairchild_semi

9N90
9N90

July 2007 ® QFET FQA9N90C 900V N-Channel MOSFET Features Description • 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 45 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 14pF) This advanced technology has been especially tailored to • Fa

1.23. ssf9n90a.pdf Size:943K _samsung

9N90
9N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.24. ssh9n90a.pdf Size:938K _samsung

9N90
9N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

1.25. ixfn39n90.pdf Size:128K _ixys

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9N90

VDSS = 900 V IXFN 39N90 HiPerFETTM ID25 = 39 A Power MOSFETs Ω RDS(on) = 0.22 Ω Ω Ω Ω Single MOSFET Die D ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25°C to 150°C 900 V E153432 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900

1.26. 9n90.pdf Size:240K _utc

9N90
9N90

UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.4? @VGS = 10 V * Ultra

1.27. aok9n90.pdf Size:289K _aosemi

9N90
9N90

AOK9N90 900V,9A N-Channel MOSFET General Description Product Summary VDS 1000@150℃ The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 1.3Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capab

1.28. aotf9n90.pdf Size:295K _aosemi

9N90
9N90

AOTF9N90 900V, 9A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF9N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 9A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 1.3Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

1.29. ap09n90cw-hf.pdf Size:60K _a-power

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AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Minimize On-resistance D BVDSS 900V Ў Fast Switching RDS(ON) 1.4? Ў Simple Drive Requirement ID 7.6A G Ў RoHS Compliant & Halogen-Free S Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply app

1.30. ap09n90cw.pdf Size:217K _a-power

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AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Minimize On-resistance D BVDSS 900V ▼ Fast Switching RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID 7.6A G ▼ RoHS Compliant & Halogen-Free S Description AP09N90C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

1.31. ap09n90w.pdf Size:97K _a-power

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AP09N90W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche test D BVDSS 900V Ў Fast Switching RDS(ON) 1.2? Ў Simple Drive Requirement ID 8.6A G S Description AP09N90 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO- 3P type provide high blocking vol

1.32. ssf9n90zh.pdf Size:501K _silikron

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 SSF9N90ZH  Main Product Characteristics: VDSS 900V RDS(on) 1.2Ω (typ.) ID 9A TO-247 Marking and pin Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.33. hfh9n90.pdf Size:681K _shantou-huashan

9N90
9N90

 Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

1.34. cs9n90f a9d.pdf Size:771K _crhj

9N90
9N90

Silicon N-Channel Power MOSFET R ○ CS9N90F A9D General Description: VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.35. cs9n90 anhd.pdf Size:785K _crhj

9N90
9N90

Silicon N-Channel Power MOSFET R ○ CS9N90 ANHD General Description: VDSS 900 V CS9N90 ANHD, the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.95 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.36. cm9n90pz.pdf Size:125K _jdsemi

9N90
9N90

R C99P MN0Z 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆900V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于 US P 电源、电焊机控制、 大功率开关电源等功率开关电路 2 .主要特点 1 开关速度快 通态电阻小,输入

1.37. wfw9n90w.pdf Size:532K _winsemi

9N90
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WFW9N90W WFW9N90W WFW9N90W WFW9N90W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 9A,900V, R (Max1.35Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mo

1.38. wff9n90.pdf Size:512K _winsemi

9N90
9N90

WFF9N90 WFF9N90 WFF9N90 WFF9N90 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 9A,900V, R (Max1.35Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode p

1.39. wfw9n90.pdf Size:428K _winsemi

9N90
9N90

WFW9N90 WFW9N90 WFW9N90 WFW9N90 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 9A,900V,R (Max1.35Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode p

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