4N80 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 4N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 106 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm

Encapsulados: TO-220 TO-262 TO-251 TO-252 TO-220F TO-220F1

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4N80 datasheet

..1. Size:207K utc
4n80.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and 1 DMOS technology. This technology is specialized in allowing a 1 minimum on-state resistance, and superior switching performance. It TO-220F1

..2. Size:235K inchange semiconductor
4n80.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 4N80 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETE

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB4N80E/D Designer's Data Sheet MTB4N80E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 4.0 AMPERES 800 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 3.0 OHM than any existing surface mou

0.6. Size:160K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB4N80E1/D Product Preview MTB4N80E1 TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK-SL Straight Lead TMOS POWER FET N Channel Enhancement Mode Silicon Gate 4.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 3.0 OHM scheme to provide enhanced voltage blockin

0.7. Size:245K motorola
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MTP4N80 PCB 24 MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES s

0.8. Size:195K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra

0.10. Size:74K motorola
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STB4NB80 N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB4NB80 800 V 3.3 4 A STB4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 3 2 1 1 DESCRIPTION D2PAK I2PAK Using the latest high voltage

0.12. Size:949K st
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STL4N80K5 N-channel 800 V, 2.1 typ., 2.5 A MDMesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code VDS RDS(on)max. ID STL4N80K5 800 V 2.5 2.5 A Industry s lowest RDS(on) x area 1 Industry s best figure of merit (FoM) 2 3 Ultra low gate charge 4 100% avalanche tested PowerFLAT 5x6 VHV Zener pro

0.13. Size:1294K st
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STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT 3 1 STD4N80K5 60 W 3 DPAK 2 STF4N80K5 20 W 1 800 V 2.5 3 A TO-220FP TAB STP4N80K5 60 W TAB STU4N80K5 Industry s lowest RDS(on) x area 3

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fqb4n80 fqi4n80.pdf pdf_icon

October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially

0.16. Size:638K fairchild semi
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September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tail

0.17. Size:650K fairchild semi
fqp4n80.pdf pdf_icon

September 2000 TM QFET FQP4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tailo

0.18. Size:203K samsung
ssp4n80.pdf pdf_icon

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

0.20. Size:500K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.400 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

0.21. Size:507K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 3.400 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

0.22. Size:860K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.400 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

0.23. Size:211K samsung
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SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

0.24. Size:208K samsung
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SSF4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.)c 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

0.25. Size:208K samsung
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SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

0.26. Size:881K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 2.450 (Typ.)c 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

0.27. Size:128K vishay
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SiHD4N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg DPAK (TO-252) Low input capacitance (Ciss) Reduced switching and conduction losses D G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance G please see www.vishay.com/doc?99912 S N-Cha

0.28. Size:389K infineon
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SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 W DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) PG-TO252-3

0.29. Size:445K infineon
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SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

0.30. Size:426K infineon
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SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

0.31. Size:59K ixys
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IXFR 34N80 VDSS = 800 V HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 A (Electrically Isolated Backside) RDS(on) = 0.24 trr 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS

0.32. Size:88K ixys
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IXTH 14N80 VDSS = 800 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.70 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25 C14 A IDM TC = 25 C, pulse width limited by TJM 56 A PD TC = 25 C 300 W G

0.33. Size:94K ixys
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IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG

0.34. Size:233K ixys
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PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30

0.35. Size:158K ixys
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IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Con

0.36. Size:128K ixys
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HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 800 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V VGSM Transi

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HiPerFETTM IXFK 34N80 VDSS = 800 V IXFX 34N80 ID25 = 34 A Power MOSFETs RDS(on) = 0.24 W Single MOSFET Die trr 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C34 A TO-264 AA (I

0.40. Size:138K ixys
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IXFN 44N80 VDSS = 800 V HiPerFETTM ID25 = 44 A Power MOSFETs RDS(on) = 0.165 Single MOSFET Die D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25 C to 150 C 800 V E153432 S VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V G VGS Continuous 20 V VGSM Tran

0.41. Size:101K ixys
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IXFR 44N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 25 A Power MOSFET RDS(on) 200 m Electrically Isolated Tab trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 8

0.42. Size:968K onsemi
fqb4n80 fqi4n80.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.43. Size:232K utc
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-t2q-t 4n80g-t2q-t.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and 1 1 DMOS technology. This technology is specialized in allowing a TO-220F1 TO-262 minimum on-state resistance, and superior switching per

0.44. Size:254K utc
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p

0.45. Size:254K utc
4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf pdf_icon

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UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 1 1 TO-220F1 TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON) charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2 * R 3.7 @ V =10V, I =2.0A DS(ON) GS D * Low

0.47. Size:232K utc
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and 1 1 DMOS technology. This technology is specialized in allowing a TO-220F1 TO-262 minimum on-state resistance, and superior switching per

0.48. Size:173K apt
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APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S Popular T-MAX or TO-264 Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT34N80B2C3_

0.49. Size:276K semelab
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0.50. Size:166K taiwansemi
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TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

0.51. Size:372K jiangsu
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N80 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This is a N-channel mode power MOSFET using advanced technology to provide planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also ca

0.52. Size:256K microsemi
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APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

0.53. Size:115K ape
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AP04N80I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 4.5 Simple Drive Requirement ID 3.2A G RoHS Compliant S Description AP04N80 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicat

0.54. Size:91K ape
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AP04N80R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 800V D Fast Switching Characteristic RDS(ON) 4.8 Simple Drive Requirement ID 3.2A G RoHS Compliant & Halogen-Free S Description AP04N80 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC con

0.55. Size:369K sisemi
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Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N80C N- MOS / N-CHANNEL POWER MOSFET SIF4N80C N- MOS / N-CHANN

0.56. Size:1321K jilin sino
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N R N-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

0.57. Size:3308K jilin sino
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N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10V Qg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

0.58. Size:1170K jilin sino
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N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10V Qg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

0.59. Size:1385K jilin sino
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N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10V Qg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

0.60. Size:1003K blue-rocket-elect
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BRCS4N80DP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. / Applications

0.61. Size:1028K blue-rocket-elect
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0.62. Size:373K nell
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RoHS 4N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (4A, 800Volts) DESCRIPTION The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw

0.63. Size:283K crhj
cs4n80 a3hd.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N80 A3HD General Description VDSS 800 V CS4N80 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.64. Size:967K cn wxdh
d4n80.pdf pdf_icon

D4N80 4A 800V N-channel Enhancement Mode Power MOSFET 1 Description D4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained by V DSS = 800V the self-aligned planar Technology which reduce the conduction loss, I = 4.0A D improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system R DS(on) TYP) = 3.7

0.65. Size:953K cn wxdh
b4n80.pdf pdf_icon

B4N80 4A 800V N-channel Enhancement Mode Power MOSFET 1 Description B4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained by V DSS = 800V the self-aligned planar Technology which reduce the conduction loss, I = 4.0A D improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system R DS(on) TYP) = 3.7

0.66. Size:1178K belling
bl4n80a-p bl4n80a-a bl4n80a-u bl4n80a-d.pdf pdf_icon

BL4N80A Power MOSFET 1 Description Step-Down Converter BL4N80A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

0.67. Size:661K belling
bl4n80-p bl4n80-a bl4n80-u bl4n80-d.pdf pdf_icon

BL4N80 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL4N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

0.68. Size:787K belling
bl4n80k-p bl4n80k-a bl4n80k-u bl4n80k-d.pdf pdf_icon

BL4N80K Power MOSFET 1 Description Step-Down Converter BL4N80K, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

0.69. Size:845K pipsemi
pta04n80.pdf pdf_icon

PTA04N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 3.7 4A RDS(ON),typ.=3.7 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT,TV/Monitor Other Applications Ordering Information Part Number Package Brand PTA04N80 TO-220F Absolute Maximum Rati

0.70. Size:510K samwin
sw4n80b.pdf pdf_icon

SAMWIN SW4N80B N-channel TO-220F MOSFET Features TO-220F TO-251N BVDSS 800V ID 4A High ruggedness RDS(ON) (Max 4 )@VGS=10V RDS(ON) 4ohm Gate Charge (Typical 14nC) 1 1 Improved dv/dt Capability 2 2 100% Avalanche Tested 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technol

0.71. Size:839K samwin
swf4n80d swn4n80d swd4n80d.pdf pdf_icon

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1 1. Gate 2.

0.72. Size:965K samwin
swf4n80k swn4n80k swd4n80k.pdf pdf_icon

SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 TO-220F BVDSS 800V ID 4A High ruggedness Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1. Gate 2. Drain 3. Source

0.73. Size:1046K samwin
swf4n80d swn4n80d swd4n80d swj4n80d.pdf pdf_icon

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET Features TO-220F TO-251N TO-252 TO-262N BVDSS 800V High ruggedness ID 4A Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 1 2 2 Application Adaptor, LED, 2 2 3 3 3 3 Industrial Power 1 1. Gate 2

0.74. Size:175K sirectifier
smos44n80.pdf pdf_icon

SMOS44N80 Power MOSFETs Dim. Millimeter Inches D Dimensions SOT-227(ISOTOP) S Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 G S M

0.75. Size:638K taitron
msk4n80f msk4n80t.pdf pdf_icon

800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220 Features VDSS=800V, ID=4A; Low Drain-Source ON Resistance RDS(ON) =3.6

0.76. Size:612K trinnotech
tmp4n80 tmpf4n80.pdf pdf_icon

TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 3.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N80 TO-220 TMP4N80 RoHS TMPF4N80G TO-220F TMPF4N80G Halogen Free Absol

0.77. Size:705K wuxi china
cs4n80a3hd-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N80 A3HD-G General Description VDSS 800 V CS4N80 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.78. Size:380K wuxi china
cs4n80fa9hd.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N80F A9HD General Description VDSS 800 V CS4N80F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.79. Size:518K wuxi china
cs4n80a4hd-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N80 A4HD-G VDSS 800 V General Description ID 4 A CS4N80 A4HD-G, the silicon N-channel Enhanced PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.80. Size:702K convert
cs4n80f cs4n80p cs4n80u cs4n80d.pdf pdf_icon

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N80F, CS4N80P,CS4N80U,CS4N80D 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N80F TO-220

0.81. Size:423K convert
cs14n80v.pdf pdf_icon

nvert Suzhou Convert Semiconductor Co ., Ltd. CS14N80V 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS14N80V TO-3P CS14N80V Absolute Maxi

0.82. Size:2314K first semi
fir4n80fg.pdf pdf_icon

FIR4N80FG N - CHANNEL MOSFET-E PIN Connection TO-220F GENERAL DESCRIPTION FIR4N80FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching G D S p

0.83. Size:1346K lonten
lnc4n80 lnd4n80 lnb4n80.pdf pdf_icon

LNC4N80/LND4N80/LNB4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q

0.84. Size:1406K lonten
lnc4n80 lnd4n80 lnb4n80 lng4n80 lnh4n80.pdf pdf_icon

LNC4N80/LND4N80/LNB4N80/LNG4N80/LNH4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gat

0.85. Size:1945K cn scilicon
sfp024n80c3 sfb021n80c3.pdf pdf_icon

SFP024N80C3,SFB021N80C3 N-MOSFET 80V, 1.9m , 120A Product Summary Features VDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteria RDS(on) typ. 1.9m Fast switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive General purpose applications D G S SFP024N80C3 SFB021N80C3 Package Marking and

0.86. Size:1314K cn scilicon
sfp024n80i3 sfb021n80i3.pdf pdf_icon

SFP024N80I3,SFB021N80I3 N-MOSFET 80V, 1.9m , 120A Product Summary Features VDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteria RDS(on) typ. 1.9m Fast switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive General purpose applications D G S SFP024N80I3 SFB021N80I3 Package Marking and

0.87. Size:717K cn scilicon
sfp036n80c3 sfb034n80c3.pdf pdf_icon

SFP036N80C3,SFB034N80C3 N-MOSFET 80V, 3m , 120A Features Product Summary Low on resistance V 80V DS Low gate charge R 3m DS(on) typ. Fast switching I 120A D High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/D

0.88. Size:245K inchange semiconductor
spd04n80c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 FEATURES Static drain-source on-resistance RDS(on) 1.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

0.89. Size:248K inchange semiconductor
spp04n80c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPP04N80C3 ISPP04N80C3 FEATURES Static drain-source on-resistance RDS(on) 1.3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO

0.90. Size:292K inchange semiconductor
sihd4n80e.pdf pdf_icon

isc N-Channel MOSFET Transistor SiHD4N80E FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Static Drain-Source On-Resistance R 1.27 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIM

0.91. Size:255K inchange semiconductor
spa04n80c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPA04N80C3 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

Otros transistores... 3N90 , 4N90 , 5N90 , 6N90 , 7N90 , 1N80 , 2N80 , 3N80 , IRF9540 , 5N80 , 6N80 , 7N80 , 8N80 , 9N80 , 10N80 , 12N80 , 1N70Z .