2N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 2N70 Power MOSFET 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power sup

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Con

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Con

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000NChannel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS1Rating Symbol Value Unit23Drain Source Voltage VDSS 60 VdcCASE 2904, STYLE 22DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcTO92 (TO226AA)GateSource Voltage

2N7002N-channel TrenchMOS FETRev. 06 28 April 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology1.3 Applications Logic level translator High-sp

2N7002EN-channel TrenchMOS FETRev. 03 28 April 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology1.3 Applications Logic level translator High-s

2N7002N-channel enhancement mode field-effect transistorRev. 03 27 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7002 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3.

2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

2N7002P60 V, 360 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

2N7002BKT60 V, 290 mA N-channel Trench MOSFETRev. 1 15 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

2N7002PT60 V, 310 mA N-channel Trench MOSFETRev. 1 2 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET

2N7002KAN-channel TrenchMOS FETRev. 03 25 February 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge(ESD) protection diodes1

2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay

2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

2N70002N7002N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID32N7000 60 V

T2N7002BKMOSFETs Silicon N-Channel MOST2N7002BKT2N7002BKT2N7002BKT2N7002BK1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking : 2NAbsolute Maximum Ratings * Ta = 25C un

May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAb

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

April 20102N7002V/VAN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant(Pin4)SOT-563FMarking : AB Marking : AC* Pin1 and Pin4 are ex

February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking : 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par

January 20122N7002KN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101DSGSOT-23

TMQFETFQPF2N70700V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored to Fa

2N7051NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings

Discrete POWER & SignalTechnologies2N7052 2N7053 NZT7053CECC TO-92BBTO-226CESOT-223BENPN Darlington TransistorThis device is designed for applications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage.Sourced from Process 06.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C

October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking : AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol P

N-Channel Small Signal MOSFET 2N7002MTFFEATURESBVDSS = 60 V Lower RDS(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 200 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature ReliabilityProduct Summary1.Gate 2. Source 3. DrainPart Number BVDSS RDS(on) ID2N7002 60V 5.0 115mAAbsolute Maximum Ratings

Advanced Small Signal MOSFET 2N7000BU/2N7000TAFEATURESBVDSS = 60 Vn Fast Switching TimesRDS(on) = 5.0 n Improved Inductive Ruggednessn Lower Input CapacitanceID = 200 mAn Extended Safe Operating Arean Improved High Temperature ReliabilityTO-921.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Contin

Advanced Small Signal MOSFET 2N7000BU/2N7000TAFEATURESBVDSS = 60 Vn Fast Switching TimesRDS(on) = 5.0 n Improved Inductive Ruggednessn Lower Input CapacitanceID = 200 mAn Extended Safe Operating Arean Improved High Temperature ReliabilityTO-921.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Contin

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

2N700260 V, 300 mA N-channel Trench MOSFETRev. 7 8 September 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.1.2 Features and benefits Suitable for logic level gate drive Surface-mounted packagesources Trench MOSFET technology Very f

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

2N7002BKV60 V, 340 mA dual N-channel Trench MOSFETRev. 2 22 September 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trenc

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

2N7002BKMB60 V, single N-channel Trench MOSFETRev. 2 13 June 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Logic-level compa

2N7002BKW60 V, 310 mA N-channel Trench MOSFETRev. 1 17 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

2N7002NXAK60 V, single N-channel Trench MOSFET1 July 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected3. Applications Relay

2N7002NXBK60 V, N-channel Trench MOSFET25 July 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

2N7002BK60 V, 350 mA N-channel Trench MOSFETRev. 1 17 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tech

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Lower Rds(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 115 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature Reliability2131.Gate 2. Drain 3. SourceProduct SummaryPart Number BVdss Rds(on) ID115mA60V2N7002 5.0 Absolute Maximum RatingsSy

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Fast Switching TimesRDS(on) = 5.0 Improved Inductive Ruggedness Lower Input CapacitanceID = 200 mA Extended Safe Operating Area Improved High Temperature ReliabilityTO-921231.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Cur

2N7002EVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition60 3 at VGS = 10 V 240 Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

2N7002EVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition60 3 at VGS = 10 V 240 Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

2N7002KVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2 at VGS = 10 V60 300 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

2N7002DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termina

2N7002N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte

2N7002AQN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage 60V 6 @ VGS = 5V 200mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate, 1.2kV HBM This MOSFET is designed to minimize the on-s

2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25C Low Input Capacitance 60V 7.5 @ VGS = 5V 210mA Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

2N7002EN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadfra

2N7002VC/VACDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance T

2N7002WN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Le

2N7002KN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin an

2N7002AN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020D Low Input Ca

2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits N-Channel MOSFET ID max V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Low Gate Threshold Voltage 60V 7.5 @ VGS = 5V 210mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

2N7002TN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Sol

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connection

2N7002DWOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 60 V Dual N-channelRDS(on),max VGS=10 V 3 W Enhancement mode Logic level VGS=4.5 V 4 Avalanche ratedID 0.3 A Fast switching Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-211 2 3 Type

Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V

MCCMicro Commercial ComponentsTM2N7002DW20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesHalogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1N-Channel MOSFET High density cell design for low RDS(ON) Rugged and r

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2N7002CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Advanced Trench Process Technology High Input ImpedanceN-Channel MOSFET High Speed Switching CMOS Logic Compatible Input

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth 2N7002WMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low ON-ResistanceN-Channel Low Input Capacitance Low Gate Threshold VoltageEnhancement Mode Fast Switching SpeedField Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2N7002KCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 High density cell design for low RDS(ON) Voltage controlled small signal switch N-Channel MOSFET Rugged and reliable Hig

2N7002AFeatures High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-Channel Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFETCompliant. See Ordering Information) Maximum Ratings Operating Junct

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth 2N7002WMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low ON-ResistanceN-Channel Low Input Capacitance Low Gate Threshold VoltageEnhancement Mode Fast Switching SpeedField Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

Features Maximum Ratings

2N7002KAFeatures High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch ESD Protected up to 2KV (HBM) Epoxy Meets UL 94 V-0 Flammability RatingN-Channel Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering

Features

Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings Operating Junct

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N7002KWN-Channel EnhancementMode Field EffectTransistorFeatureswww.onsemi.com Low On-Resistance Low Gate Threshold VoltageD Low Input Capacitance Fast Switching SpeedS Low Input/Output Leakage G Ultra-Small Surface Mount PackageSC-703 LEAD These Devices are Pb-Free and are RoHS CompliantCASE 419AB ESD HBM = 1000 V as per JESD22 A114 a

2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorDescriptionFeaturesThese N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON)tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switchproprietary, high cell density, DMOS technology. These Rugged and Reliableproducts have been de

2N7002ESmall Signal MOSFET60 V, 310 mA, Single, N-Channel, SOT-23Features Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package Trench TechnologyV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(Note 1)Compliant60 V 3.0 W @ 4.5 V 310 mAApplications 2.5 W @ 10 V Low Side Load Switch Level Shift Circ

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)www.onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V These D

2N7002ESmall Signal MOSFET60 V, 310 mA, Single, N-Channel, SOT-23Features Low RDS(on)http://onsemi.com Small Footprint Surface Mount Package Trench TechnologyV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(Note 1)Compliant60 V 3.0 W @ 4.5 V 310 mAApplications 2.5 W @ 10 V Low Side Load Switch Level Shift C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features AEC Qualifiedhttp://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.5 W @ 10 V,60 V 115 mA500 mAMAXIMUM RATINGSRating Symbol Value UnitN-ChannelDrain-Source Voltage VDSS 60 Vdc3Drain-Gate Voltage (RGS = 1.0 MW) V

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)www.onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V These D

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable (2V7002L)V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant7.5 W @ 10 V,60 V 115 mA500 mA

2N7000GSmall Signal MOSFET200 mAmps, 60 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified200 mAMPS PPAP Capable60 VOLTS This is a Pb-Free Device*RDS(on) = 5 WN-ChannelMAXIMUM RATINGS DRating Symbol Value UnitDrain Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGGate-Source Voltage- Continuous VGS 20 VdcS- No

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)http://onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V Thes

2N7002W, 2V7002WSmall Signal MOSFET60 V, 340 mA, Single, N-Channel, SC-70Features ESD Protected Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and(Note 1)PPAP Capable1.6 W @ 10 V These Devi

2N7002W, 2V7002WSmall Signal MOSFET60 V, 340 mA, Single, N-Channel, SC-70Features ESD Protected Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and(Note 1)PPAP Capable1.6 W @ 10 V These Devi

2N7000GSmall Signal MOSFET200 mAmps, 60 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified200 mAMPS PPAP Capable60 VOLTS This is a Pb-Free Device*RDS(on) = 5 WN-ChannelMAXIMUM RATINGS DRating Symbol Value UnitDrain Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGGate-Source Voltage- Continuous VGS 20 VdcS- No

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Site andhttp://onsemi.comChange Controls AEC Qualified - 2V7002LV(BR)DSS RDS(on) MAX ID MAX PPAP Capable - 2V7002L These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 W @ 10 V,60 V 115 mACompliant 500 mAN-Channel

2N7007N-Channel Enhancement-ModeVertical DMOS FETOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-92240V 45 150mA 2N7007Features Advanced DMOS TechnologyThese enhancement-mode (normally-off) transistors utilize a Free from secondary breakdownvertical DMOS structure and Supertexs well-proven silicon-gate Low power drive requirement

2N7008N-Channel Enhancement-ModeVertical DMOS FETsFeatures General DescriptionThe Supertex 2N7008 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device wit

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Co

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance

UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Controlled S

UNISONIC TECHNOLOGIES CO., LTD 2N70K Power MOSFET 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70K is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is p

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product isTO-92particularly suited for low vo

UNISONIC TECHNOLOGIES CO., LTD 2N7002K Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typica

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance

UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Volta

UNISONIC TECHNOLOGIES CO., LTD 2N7002K Preliminary Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CR

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo

UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Controll

UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Contr

UNISONIC TECHNOLOGIES CO., LTD 2N70Z Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power suppli

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1voltages. This device is suitable for use as a load switch or in 2PWM applications. FEATURES SOT-23-3(JEDEC TO-236)* RDS(ON) = 7.5

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary, planar 1stripe, DMOS technology. 1These devices are suited for high efficiency switch mode power TO-220F1 TO-220F2supply. To minimize on-state res

2N7002BN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 2000V (HBM) Low On-Resistance: RDS(on)

2N7000KN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application COLLECTORFeatures 3 ESD rating: 1000V (HBM) 3 Low On-Resistance: R

2N7002KU N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 2000V (HBM) Low On-Resistance: R

2N7002KS6Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBMApplications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33REV:D Absolute Maximum Ratings(Ta=25

2N7002DCSMMECHANICAL DATADimensions in mm (inches)DUAL NCHANNELENHANCEMENT MODEMOS TRANSISTOR1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)FEATURES2 314 V(BR)DSS = 60VA0.236 5rad.(0.009) RDS(ON) = 7.56.22 0.13 A = 1.27 0.13(0.05 0.005)(0.245 0.005) ID = 0.115ACERAMICLCC2 PA

2N7086MECHANICAL DATADimensions in mm(inches)NCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS 200V1 2 3ID(A) 14ARDS(on) 0.160.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILI

2N7081220MISOMECHANICAL DATADimensions in mm(inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)VDSS 100V3.56 (0.140)Dia.3.81 (0.150)ID(cont) 11ARDS(on) 0.151 2 3FEATURES TO220 ISOLATED HERMETIC PACKAGE LOW RDS(ON)0.64 (0.025)Dia.0.89 (0.035) SIMPLE DRIVE REQUIREMENTS

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn

2N7091MECHANICAL DATADimensions in mm(inches)PCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS -100V1 2 3ID(A) -14ARDS(on) 0.200.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILITY APP

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage

2N7085MECHANICAL DATADimensions in mm(inches)NCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS 100V1 2 3ID(A) 20ARDS(on) 0.0750.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILITY APPL

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 6

2N7000CSMMECHANICAL DATADimensions in mm (inches)NCHANNELENHANCEMENT MODEMOS TRANSISTOR0.51 0.10(0.02 0.004) 0.31rad.(0.012)3FEATURES V(BR)DSS = 60V21 RDS(ON) = 51.91 0.10(0.075 0.004)A0.31rad.(0.012)3.05 0.13 ID = 200mA(0.12 0.005)1.40(0.055)1.02 0.10 Hermetic Ceramic Surface Mount max.A =(0.04

2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 A Advanced Trench Process Technology L High Density Cell Design For Ultra Low On-Resistance

2N7000200mA,60V,RDS(ON) 6Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-92 DDescriptionES1The 2N7000 is designed for high voltage, highspeed applications such as switching regulators,converters, solenoid and relay drives. b1SEATING PLANECe1beDrainMillimeter MillimeterREF. REF. Min. Max. Min. Max. Gat

S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package AL33Top

2N7002K 0.3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 AL Advanced Trench Process Technology 33 High Density Cell Design For Ultra Low On-Resista

S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product SOT-23 A suffix of -C specifies halogen & lead-free ALFEATURES 33 Pb-Free Package is Available Top View C BPACKAGING INFORMATION 11 22K EDrain Drain 3 3 D H JF G702 W 1 Millimeter Millimeter REF. REF. Min. Max. Min.

2N7002T 0.115A , 60V , RDS(ON) 7.2 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). A Voltage controlled small signal switch. M Rugged and reliable. 33 High saturation current capability. Top View C B11 2

S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of -C specifies halogen & lead-free AL33Top View C BFEATURES 11 23 DRAIN2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1H JF GGATE* Easily designed drive circuits. Easy to parallel.

S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363MECHANICAL DATA Case: SOT-363Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INF

S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323FEATURES Low on-resistance Fast switching Speed AL Low-voltage drive 33 Easily designed drive circuits Top View C B11 2 ESD protected:1500V 2K EDH JF GMillimeter MillimeterREF. REF.

2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363FEATURES A Low on-resistance EL Fast switching Speed 6 5 4 Low-voltage drive Easily designed drive circuits B ESD protected:2000V 1 2 3FC H6 5 4MECHANICAL DATA JD2 G1 S1 D

TSM2N70 700V N-Channel Power MOSFET Pin Definition: TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs2N7002DW Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V60V115mA@5V7APPLICATION FEATURE High density cell design for low RDS(ON) Load Switch for Portable Devices DC/DC Converter Voltage controlled small signal switch Rugged and reliable High

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-23 5@10V360V115mA 7@5V1. GATE 2. SOURCE 1 23. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal sw

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS2N7002KW N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 2.5 3 1. GATE2. SOURCE123. DRAINFEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled sm

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS TO-92 2N7000 MOSFET (N-Channel) 1. SOURCE FEATURES High density cell design for low RDS(ON) 2. GATE Voltage controlled small signal switch 3. DRAIN Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value

2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-323 5@10V360V 115mA7@5V1. GATE 2. SOURCE 3. DRAIN 12APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small sig

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS onz Voltage controlled small signal switch 1. GATE 2. SOURCE z Rugged and reliable 3. DRAINz High saturation current capability zESD protected up to 2KV Marking: 72K Equivalent circuit MOSFET

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel)ID V(BR)DSS RDS(on)MAX SOT-563 62.5@10V560V4115mA3@5V123FEATURE APPLICATION Dual N-channel MOSFET Load Switch for Portable Devices DC/DC Converter Low on-resistance Low gate threshold voltage Low input capacitance

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-523 5@10V60V115mA 1. GATE 7@5V2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V 660V5340mA45.3@4.5V123FEATURE APPLICATION z High density cell design for Low RDS on Load Switch for Portable Devicesz Voltage controlled small signal switch DC/DC Converter z Rugged

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 33 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKING:K72 MAXIMUM RATINGS (Ta=25

2N7002SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LHigh density cell design for low RDS(ON).DIM MILLIMETERSVoltage controlled small signal switch._+A 2.93 0.20B 1.30+0.20/-0.15Rugged and reliable.C 1.30 MAX23High saturation current capablity.D 0.45+0.15/-0.05E 2.40+0.30/

2N7000SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controlled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RA

2N7000KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. B CFEATURESESD Protected 2000V.High density cell design for low RDS(ON).Voltage controlled small signal switch.N DIM MILLIMETERSRugged and reliable.A 4.70 MAXEKB 4.80 MAXHigh saturation current capablity. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H

2N7002KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERSHigh density cell design for low RDS(ON)._A +2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23Rugged and reliable.D 0.45+0.15/-0.05E 2.40+0.30/-0.20High saturation curr

2N7002ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LHigh density cell design for low RDS(ON).DIM MILLIMETERSVoltage controolled small signal switch._A +2.93 0.20B 1.30+0.20/-0.15Rugged and reliable.C 1.30 MAX23High saturation current capablity.D 0.45+0.15/-0.05E 2.40+0.3

2N7002KASEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERS_+High density cell design for low RDS(ON). A 2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23 D 0.40+0.15/-0.05Rugged and reliable.E 2.40+0.30/-0.201G 1.90

2N7000ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controolled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

2N700260V N-Channel Enhancement Mode MOSFET Feature SOT-23 60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Conver

2N7002Mosfet (N-Channel)SOT-231. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: 7002 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V

2N7000 Mosfet (N-Channel)TO-921. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V Dimensions in inches and (millimeters)ID Drain Curr

2N7002W Mosfet(N-Channel)SOT-3231. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V

2N7002DWDual N-Channel MOSFET654123Features:* We declare that the material of product are Halogen Free andSOT-363(SC-88) compliance with RoHS requirements.* ESD Protected:1000V3 2 1D2 G1 S1S2 G2 D14 5 6Maximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VDrain-Gate Voltage RGS

WEITRON2N7002Small Signal MOSFET3 DRAINN-Channel3P b Lead(Pb)-Free121GATESOT-232SOURCEMaximum Ratings (T =25C Unless Otherwise Specified)ARating Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage(RGS = 1.0M) VDGR 60 V115Drain Current IDContinuous TC = 25C (Note 1.) 75IDmA Con tinuous IDM 800TC= 100C (Note 1.) P

WEITRON2N7000Small Signal MOSFETN-Channel3 DRAINTO-92Features:21*Low On-Resistance : 5 GATE 1. SOURCE 23*Low Input Capacitance: 60PF 2. GATE3. DRAIN*Low Out put Capacitance : 25PF1SOURCE*Low Threshole :1.4V(TYE)*Fast Switching Speed : 10nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-S

2N7002WN-Channel MOSFET3 DRAIN3Features:112*Low On-Resistance : 7.5 GATE*Low Input Capacitance: 22PFSOT-323(SC-70)*Low Output Capacitance : 11PF2*Low Threshold Voltage :1 .5V(TYE)SOURCE*Fast Switching Speed : 7nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VConti

2N7002KN-Channel Enhancement 3 DRAINMode Power MOSFET31P b Lead(Pb)-Free1GATE *2* Gate Pretection DiodeSOURCE 2SOT-23Features:* Low on-resistance.* Fast switching speed.* Low-voltage drive.* Easily designed drive circuits.* Easy to parallel.* Pb-Free package is available.* Esd Protected:2000VMaximum Ratings(T = 25 Unless Otherwise Specified)A

2N7002TN-Channel ENHANCEMENT MODEPOWER MOSFET31. GATE1P b Lead(Pb)-Free22. SOURCE3. DRAIN SOT-523(SC-75)FEATURES:* Fast Switching Speed* Low On-Resistance* Low Voltage DriverAPPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits* Load/Power Switching Cell Phones, PagersMaximu

2N7002KDWDual N-Channel MOSFET65P b Lead(Pb)-Free 4123Features:* Low On-ResistanceSOT-363(SC-88)* Fast Switching Speed* Low-voltage drive6 5 4* Easily designed drive circuitsD2 G1 S1* ESD Protected:2000VMechanical Data:*Case: SOT-363, Molded Plastic*Case Material-UL Flammability Rating 94V-0S2 G2 D1*Terminals: Solderable per MIL-STD-202, Method 2081 2

2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES:SC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce

FM120-M WILLASTHRU2N7002LT1Small Signal MOSFET 115 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

FM120-M WILLASTHRU2N7002WT1115 mA, 60 VSmall Signal MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNCh

FM120-M WILLASTHRU2N7002NT130 V, 154 mA, Single, N-Channel, GateFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VESD Protection, SC-89SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted appl

FM120-M WILLASTHRU2N7002TSOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HMOSFET (N-Channel) nted application in order to Low prof

FM120-M WILLAS2N7002ELT1THRUSmall Signal MOSFET 310 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounteNChannel SOT23d ap

FM120-M WILLASTHRU2N7002DW1T1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSmall Signal MOSFET 115 mAmps,60 VoltsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersNChannel SOT-363 better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted app

Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 33-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: DrainN-CHANNEL TRANSISTOR 21Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai

Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage .........................................................................................................

Spec. No. : HE6267HI-SINCERITYIssued Date : 1993.09.17Revised Date : 2006.08.10MICROELECTRONICS CORP.Page No. : 1/5H2N7000N-Channel Enhancement Mode TransistorDescriptionThe H2N7000 is designed for high voltage, high speed applications such as switchingregulators, converters, solenoid and relay drivers.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temp

Spec. No. : MOS200503 HI-SINCERITY Issued Date : 2005.04.01 Revised Date : 2009.10.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage ................................................................................................................

Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol

AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

AP02N70EJ-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD ESD Improved Capability RDS(ON) 7G Simple Drive Requirement ID 1.6A RoHS CompliantSGDescriptionDSTO-251(J)AP02N70 from APEC provide the designer with the best combination offast switching , low on-resistance and c

APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost

AP02N70EJRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD ESD Improved Capability RDS(ON) 7G Simple Drive Requirement ID 1.6ASGDescription DTO-251(J)SAP02N70 from APEC provide the designer with the best combinationof fast switching , low on-resistance and cost-effectiveness.Th

AP02N70EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD ESD Improved Capability RDS(ON) 7G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-FreeSDescriptionAP02N70 from APEC provide the designer with the bestGDcombination of fast switching , low on-resistance and

AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th

FTU02N70/FTD02N70 700V N-Channel MOSFET General Features BVDSS RDS(ON) (Max.) ID Low ON Resistance Low Gate Charge 700V 6.5 1.8A Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information Part Number Packag

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N7002KN-Channel High Density Trench MOSFET (60V, 0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (ohm) Max 3 @ VGS = 10V, ID=0.5A 60V 0.5A 5 @ VGS = 5V, ID=0.05A Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV 2N7002K Pin Assignment & Symbol

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF2N70DN- MOS / N-CHANNEL POWER MOSFET SIF2N70DN- MOS / N-CHANN

N RN-CHANNEL MOSFET JCS2N70C Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 10.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge U

N RN-CHANNEL MOSFET JCS2N70H Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 8.0nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDSON(typ): 6.2 MTN2N70I3 ID : 1.8A Description The MTN2N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

Spec. No. : C722FP Issued Date : 2011.06.09 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDS(ON) : 5.8 (typ.) MTN2N70FP ID : 1.8A Description The MTN2N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

GreenSDU/D02N70ProductaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.700V 2A 5 @VGS=10VSuface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERING

PZ2N7002MN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V60V 300mASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C300IDContinuous Drain Current mATC = 100 C190IDM1 APulsed Drain C

2N7002KB Main Product Characteristics: VDSS 60V RDS(on) 2(max.) ID 0.3A Marking and pin SOT-23 Schema t ic diag r am Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating t

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET(N-Channel) FEATURES High density cell design for low RDS(ON) Voltage cotrolled small signal switch Rugged and reliable High saturation current capability MARKING:7002 MAXIMUM RATINGS (TA=25 unless otherwise noted

2N7002K1 Rev.I May.-2022 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 1KV Sensitive gate trigger current and Low Holding current.ESD protected up to 1KV. HF product. / Applications

2N7002K Rev.I May.-2022 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV. HF product. / Applications

BR2N7002LK2 Rev.C Oct.-2023 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV,HF Product. / Applications

BR2N7002AK2 Rev.D Oct.-2023 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV, HF Product. / Application

BRF2N70(BRCS2N70F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

BRI2N70 Rev.A Jul.-2016 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , R ,DS(on)Low gate charge, Low ON Resistance, fast switching. / Applications Power switch circuit of adaptor an

BR2N7002K2 Rev.C Aug.-2018 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KVSensitive gate trigger current and Low Holding current.ESD protected up to 2KV.HF Product. / Applications

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel DrainGateSource1. Source 2.Gate 3.DrainTO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain-Gate Voltage (RGS = 1 M) VDGR 60 VGate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s)Drain Current Continuous

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps, 60 VoltsL2N7002DMT1GNChannel SC74 We declare that the material of product compliance with RoHS requirements.MAXIMUM RATINGSRating Symbol Value UnitSC-74DrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc115 mAMPSDrain Current ID 115 mAdc Continuous TC = 25C (Note 1

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap

L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd

L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected:1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R

L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002FLT1G30 VoltsNChannel SOT233 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. 12FEATURES CASE 318, STYLE 21SOT 23 (TO236AB) RDS(ON) 8@VGS=4V RDS(ON) 13@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exce

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

Silicon N-Channel Power MOSFET R CS12N70 A8H VDSS 700 V General Description ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS2N70F A9 General Description VDSS 700 V CS2N70F A9, the silicon N-channel Enhanced ID 2 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

SMD Type MOSFETDual N-Channel MOSFET2N7002DW Features VDS (V) = 60V ID = 115 mA (VGS = 10V) RDS(ON) 7.5 (VGS = 5V) Low Input Capacitance Fast Switching Speed Low On-Resistance1.S2 4.S12.G2 5.G13.D1 6.D2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage @ RGS 1M

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1Features3High density cell design for low RDS(ON)Voltage controlled small signal switchRugged and reliable1 2High saturation current capability+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base1 GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings Ta=2

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features 3Low On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2Low Input Capacitance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol Ra

SMD Type MOSFETN-Channel MOSFET2N7002TESOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 0.29 A3 RDS(ON) 2 (VGS = 20V) 0.30.05+0.10.5 -0.1 RDS(ON) 7.5 (VGS = 5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

SMD Type MOSFETN-Channel MOSFET2N7002W Features VDS (V) = 60V ID = 0.34 A (VGS = 10V) RDS(ON) 1.6 (VGS = 10V) RDS(ON) 2.5 (VGS = 4.5V) ESD Protected1 Gate2 Source3 Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Ta=25 310 Continuous Drain C

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002KSOT-23Unit: mm+0.12.9 -0.1Features+0.10.4 -0.13Low On-Resistance: RDS(ON)Low Gate Threshold VoltageLow Input CapacitanceD rain1 2Fast Switching Speed+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Low Input/Output Leakage ESD Protected 2KV HBMGate1.Base1 GATE2.Emitter2 SOURCEGateProtectio

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002KSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3Low On-Resistance: RDS(ON)Low Gate Threshold VoltageLow Input Capacitance1 2D rain+0.02+0.10.15 -0.020.95 -0.1Fast Switching Speed+0.11.9-0.2Low Input/Output Leakage ESD Protected 2KV HBMGate1.Base1 GATE2.Emitter2 SOURCEGateProtect

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2+0.02Low Input Capacitance +0.10.15 -0.020.95 -0.1+0.11.9 -0.2Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1Features3High density cell design for low RDS(ON)Voltage controlled small signal switchRugged and reliable1 2High saturation current capability+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.21.Base1 GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings

SMD Type MOSFETN-Channel MOSFET2N7002TSOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 115mA3 RDS(ON) 5 (VGS = 10V)0.30.05 RDS(ON) 7 (VGS = 5V)+0.10.5-0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

SVF2N70M/MJ/F/D/NF/MN 10A650V N 2SVF2N70M/MJ/ F/D/NF/MN N MOS 123 F-CellTM VDMOS TO-251-3L1132

MSD2N70 700V N-Channel MOSFET Description The MSD2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

MSF2N70 700V N-Channel MOSFET Description The MSF2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technol

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

2N7002N-Channel Advanced Power MOSFETFeatures Pin Description 60V/0.5A, RDS (ON) =4500m(Typ.)@VGS=10VD RDS (ON) =5250m(Typ.)@VGS=4.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Power Management in Desktop Computer or DC/DC ConvertersGSN-C

WFF12N70SWFF12N70SWFF12N70SWFF12N70S700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFETFeatures Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150)General DescriptionPower MOSFET is fabricated using

2N7002DW60V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU Ro

2N700260V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.50.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays 0.056(1.40)0.047(1.20) Drivers : Relays, Displays, Lamps, Solenoid

2N7002KW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, La

2N7002W60V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU RoH

2N7002K60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=40.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.056(1.40) Specially Designed for Battery Operated Systems, Solid-State R

2N7002TB60V N-CHANNEL ENHANCEMENT MODE MOSFETUnitinch(mm)SOT-523FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@50mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.0.

2N7002KDW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, L

2N7002KTB60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.052(1.30)0.024(0.60) Specially Designed for Battery Operated Systems, Solid-State Relays0.

AiT Semiconductor Inc. AM2N7002 www.ait-ic.com SMALL SIGNAL MOSFET 115mA, 60 VOLTS N-CHANNEL MOSFET DESCRIPTION FEATURES Available in SOT-23 and SC70-3 packages. ESD Protected: 1000V Available in SOT-23 and SC70-3 packages ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number AM2N7002E3R SOT-23 E3 AM2N7002E3VR SC70-3 AM2N7002C3R C3 (SOT-323) AM2N7002C3

AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected: 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:

AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected: 2000V S- Prefix for Automotive and Other Applications Requirin

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected: 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V: Halogen free Package Note R: Tape & Reel SPQ: 3,0

BL12N70 Power MOSFET 1Description Step-Down Converter BL12N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast swi

CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast sw

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

CHENMKO ENTERPRISE CO.,LTD2N7002ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged and reliable.(1)

CHENMKO ENTERPRISE CO.,LTD2N7002SSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(G1)

CHENMKO ENTERPRISE CO.,LTD2N7002SESGPSURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 AmpereAPPLICATION* Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems. FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363). * 60V/0.5A, RDS(ON)=2ohm at VGS=10V* Super high d

CHENMKO ENTERPRISE CO.,LTD2N7002SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(S1)

CHENMKO ENTERPRISE CO.,LTD2N7002GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged

CHENMKO ENTERPRISE CO.,LTD2N7002TESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing density.0.10.20.

CHENMKO ENTERPRISE CO.,LTD2N7002DSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-74/SOT-457* Small surface mounting type. (SC-74/SOT-457)* High density cell design for low RDS(ON). * Suitable for high packing density.(1) (6)*

CHENMKO ENTERPRISE CO.,LTD2N7002GP-ASURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugge

CHENMKO ENTERPRISE CO.,LTD2N7002EGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing dens

CHENMKO ENTERPRISE CO.,LTD2N7002ESEGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged and

CHENMKO ENTERPRISE CO.,LTD2N7002TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

CHENMKO ENTERPRISE CO.,LTD2N7002VGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESOT-563* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON)* Suitable for high packing density.(1)(S1) (D1)(6)* Rug

MOSFET2N7002-G (N-Channel)RoHS DeviceFeaturesSOT-23 Power dissipation : 0.35W0.119(3.00)0.110(2.80)DEquivalent Circuit0.056(1.40)0.047(1.20)DG S0.083(2.10)G : Gate 0.066(1.70)0.006(0.15)S : Source 0.002(0.05)GD : Drain0.044(1.10)0.103(2.60)0.035(0.90)0.086(2.20)S0.006(0.15)max0.020(0.50)Maximum Ratings (at TA=25C)0.013(0.35)Symbol 0.00

CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance

Product specification 4V Drive Nch MOS FET 2N7002K FEATURES Low on-resistance. Pb High ESD. Lead-free High-speed switching. Low-voltage drive(4V). Drive circuits can be simple. Parallel use is easy. APPLICATIONS N-channel enhancement mode effect transistor. SOT-23 Switching application. ORDERING INFORMATION Type No. Marking Packag

N-Ch Enhancem osFET Trahannel E ment Mo ansistor 2NN7002H Feature es Low on-resistancce. Pb ESD Protected G 2KV HBM Lead-freeGate Up to 2 High- ching. -speed switc2N7002H 2N7002HHW Drive n be simple. e circuits can SOT-23 SOT-323 T 2 Parallel use is eaasy. Typica ations al Applica N-channel enhan ode effect trancement mo ansistor. Switc ation

2N7002K 60V N-Channel MOSFET FEATURES VDS=60V, ID=0.3ARDS(ON)

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY2N70D / HY2N70M 700V / 2A700V, RDS(ON)=6.5W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

HY2N70T / HY2N70FT 700V / 2A700V, RDS(ON)=6.5W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

K2N7002K N-Channel Enhancement Mode MOSFET 2018.04.18 2018.04.18 2018.04.18 2018.04.18 1 000 2017.10.18 2 001 2018.04.18 3 1 of 7 AUK Dalian K2N7002K N-Channel Enh

ME2N7002D N-Channel MOSFET ESD ProtectedGENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min

ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0@VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5@VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc

Pb Free Producthttp://www.ncepower.com 2N7002KNCE N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON)

http://www.ncepower.comA2N7002KNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I = 0.3ADS DR

PZ2N7002MN-Channel Logic Level Enhancement NIKO-SEM SOT-23(S) Mode Field Effect Transistor Halogen-Free & Lead-FreeDrainPRODUCT SUMMARY GateV(BR)DSS RDS(ON) ID G. GATE D. DRAIN 60V 2 300mA S. SOURCE ESD PROTECTION DIODE SourceABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS

SAMWIN SW2N70N-channel MOSFETTO-251 TO-252BVDSS : 700VFeaturesID : 2A High ruggednessRDS(ON) : 7ohm RDS(ON) (Max 7 )@VGS=10V2 Gate Charge (Typical 11nC)11 Improved dv/dt Capability 2 323 100% Avalanche Tested1. Gate 2. Drain 3. Source13General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.This te

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application:LED, PC Power, Char

SW2N70D N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET Features BVDSS : 700V TO-220F TO-251N TO-252 TO-126 ID : 2A High ruggedness Low RDS(ON) (Typ 5)@VGS=10V RDS(ON) : 5 Low Gate Charge (Typ 11nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application: Charger,LED 3 3 3 3 1 1. Gate 2.

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 3 Application:LED, PC Power,

Dec 2009BVDSS = 700 VRDS(on) typ HFS2N70SID = 1.6 A700V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS

Dec 2009BVDSS = 700 VRDS(on) typ HFP2N70SID = 1.6 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(

Dec 2009BVDSS = 700 VRDS(on) typ = 5.0 HFD2N70S / HFU2N70SID = 1.5 A700V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD2N70S HFU2N70S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.

2N7002N-Channel Power MOSFET DGeneral Features VDS = 60V,ID =0.115A GRDS(ON)

2N7002KWPlastic-Encapsulate MOSFETSN-Channel MOSFETSOT-323IV(BR)DSS RDS(on)MAX D35K@10V60 V340mA1. GATE5.3K@4.5V2. SOURCE123. DRAINFEATUREAPPLICATION Load Switch for Portable Devicesz Highdensity celldesign for Low RDS(on) DC/DC Converterz Voltagecontrolled smallsignal switchz Rugged andreliablez High saturation current capabilityz ESD pro

2N7002EN-Channel Power MOSFET General Features VDS = 60V,ID = 300mA RDS(ON)

2N7002K 60V/0.3A N-Channel MOSFETProduct SummaryFeaturesTrench Power MV MOSFET technology VDS RDS(ON) MAX ID MAXVoltage controlled small signal switch 3.5@10VD260V S1 0.3AD1Low input Capacitance4.5@4.5VFast Switching SpeedLow Input / Output LeakageDApplicationBattery operated systemsSSolid-state relaysGDSOT-23 top view Schematic dia

2N7002KDWN- Channel MOSFET Epoxy meets UL 94 V-0 flammability rating High density cell design for low RDS(ON) Voltage controlled small signal switch High Saturation Current Capability ESD ProtectedDevice Marking Code2N7002KDW K27Maximum Ratings Ta = 25 Symbol Parameter Value Units VDS Drain-source Voltage 60 V VGS Gate-source-Voltage 20 V

2N7002KTN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60VDS I 100mAD R ( at V =10V) 8.0 DS(ON) GS R ( at V =4.5V) 13.0 DS(ON) GS ESD Protected Up to 2.0KV (HBM)General Description Trench Power LV MOSFET technology High Power and current handing capabilityApplications SOT-523 Load/Power Switching Int

"2N7089""2N7089""2N7089""2N7089"

2N7002WSK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES LOW ON-RESISTANCE FAST SWITCHING SPEED LOW VOLTAGE DRIVE ESD PROTECTED GATE PORTABLE APPLICATIONS SUCH AS CELL PHONES, MEDIA PLAYERS, DIGITAL CAMERAS, PDAS , VIDEO GAMES, HAND HELD COMPUTERS, ETC. MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free: 2N7002WSK H

S2N7002DM SMALL SIGNAL MOSFET 115mA 60V N-CHANNEL FEATURES FAST SWITCHING SPEED. EASILY DESIGNED DRIVE CIRCUITS. LOW ON-RESISTANCE ESD PROTECTED:1000V MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free: S2N7002DM Halogen Free: S2N7002DM-H CASESOT-23-6L DIMENSIONS IN MILLIMETERS AND (INCHES) ABSOLUTE MAXIMUM RATINGS RATINGS AT 25C AMBIEN

QM12N70F 1 2011-09-09 - 1 -N-Ch 700V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N70F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 700V 1 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N70F meet

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mAcharge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

RUMWUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002B-SOT 23 Plastic-Encapsulate MOSFETS2N7002B MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-23 5@10V60V115mA 7@5V1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage co

WM02N70ME N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 7A DS DR

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS2N70F A9 General Description VDSS 700 V CS2N70F A9, the silicon N-channel Enhanced ID 2 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

2N700260V SOT23 N-channel enhancement mode MOSFET SummaryV(BR)DSS RDS(on) ( )ID (A)7.5 @ VGS= 10V 0.5607.5 @ VGS= 5V 0.05DescriptionA small signal MOSFET for general purpose switching applications.FeaturesD Fast switching speed Low gate drive capability SOT23 packageGApplicationsS General switching applicationsOrdering informationSDevice Reel

2N7002EW N-Channel MOSFET(ESD)SOT-323 Plastic-Encapsulate MOSFETSFEATURE High density cell design for Low RDS(on)SOT-323 Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE ESD protected 3. DRAIN APPLICATION

2N7002EN-Channel SMD MOSFET ESD Protection 60V N-Channel Enhancement Mode MOSFET- ESD ProtectionFeaturesPackage outline RDS(ON), VGS@10V, ID@500mA=3.0 RDS(ON), VGS@4.5V, ID@200mA=4.0 SOT-23 ESD protection 2V (Human body mode) Advanced trench process technology. High density cell design for ultra low on-resistance. Very low leakage current in off c

2N7002TN-Channel MOSFETSOT-523 Plastic-Encapsulate MOSFETSID V(BR)DSS RDS(on)MAX SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE High density cell design for low RDS(ON) Voltage controlled

2N7002ET N-Channel SMD MOSFET ESD ProtectionProduct Summary V R I (BR)DSS DS(on)MAX D3@10V 60V 0.115A 4@4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable Battery Switch High saturation current capability

2N7002MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. MAXIMUM RANTINGSParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGat

CS2N70HF, CS2N70HP nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N70HU, CS2N70HD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N70H

2N7002KN-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 2.8@10V 60V 0.34A 3.6@4.5V Feature Application ESD protection Specially designed for battery operated system, Advanced trench process technology solid-state relays drivers,relays,displays,lamps, High density cell design for ultra low on-resistance solenoids,memories,etc. Very low leaka

2N7002KDN-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 5.0@10V 60V 0.34A 5.3@4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable High saturation current capability ESD protected Package Circuit diagram

Eternal Semiconductor Inc. ET2N7002KN-Channel High Density Trench MOSFET (60V,0.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ2.5 @ VGS = 10V, ID=0.5A60V 500mA3.0 @ VGS = 5V, ID=0.05AFeatures High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV LeadPb-free and halogen-freeDrainET2N7002K Pin Assignment & Symbo

FIR12N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 44nC (Typ.). BVDSS=700V,ID=12A GDS RDS(on) : 0.75 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc

FIR2N70FGAdvanced N-Ch Power MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) : 6.3 (Max) @VG=10VG 100% Avalanche TestedD S gSchematic dia ram D G S Marking DiagramY = YearA = Assem

Plastic-Encapsulate Mosfets2N7002FEATURE N-Channel MOSFET High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit1.GateDrain-Source Voltage VDS 60 V 2.SourceSOT-233.DrainGate-Source Voltage VGS 20 V Cont

Plastic-Encapsulate DiodesFEATURE 2N7002K High density cell design for low RDS(ON) N-Channel MOSFET Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD Protected Up To 2k VMAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit1.GateDrain-Source Voltage VDS 60 V 2.SourceSOT-233.DrainGate-Sou

HSS2N7002K N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V We declare that the material of product compliance with Rohs requirements and RDS(ON),max 2 Halogen Free. ESD protected ID 0.3 A Low RDS(on) SOT23 Pin Configuration l Low side load switch l Level shift circutis l DC-DC converter l Portable applications i.e. DSC, PDA, Cell Phone,

2N7002HD-ST0.36*0.36SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 235@10VD60V115mA7@5VSFeatures MOSFET (N-Channel) GHigh density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Applications

2N7002KSOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 235@10VD60VmA340@4.5V5.3SFeatures High density cell design for Low RDS onGVoltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Applications Load

JMTD2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR

JMTLA2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR

JMTL2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.3A Battery Operated SystemsDS DR

JMTLB2N7002KDSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR

2N7002 N-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 5@10V60V115mA 7@5V1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable High saturation current capability Equivale

2N7002KT SOT-523 Plastic-Encapsulate Mosfets Features Gate 1 High density cell design for low R DS (ON) Voltage controlled small signal switch 3 Drain Rugged and reliable High saturation current capability Source 2Applications (Top View) Load Switch for Portable Devices DC/DC Converter Marking: KN Maximum Ratings (T =25C unless otherwise spe

2N7002K60V,0.34AN-Channel MosfetSOT-23FEATURESRDS(ON) 2.3 @VGS=10V RDS(ON)2.7 @VGS=4.5VAPPLICATIONSPortable appliancesMARKING N-CHANNEL MOSFET7002:Device CodeMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 60VGate-Source Voltage VGS 20I 0.34D*Continuous Drain Current*Pulsed Drain Current*

2N7002SOT-23 Plastic-Encapsulate MOSFETS60V N-Channel Enhancement Mode MOSFETV(BR)DSS RDS(on)MAX ID SO T -23 31.1@10V60VmA500@4.5V1.3 1. GATE 2. SOURCE 123. DRAINFEATURE APPLICATION Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable Hig

2N7002KSOT-23 Plastic-Encapsulate MOSFETS60V N-Channel Enhancement Mode MOSFETV(BR)DSS RDS(on)Typ ID MAX SO T -23 30.9@10V60VmA500@4.5V1.1 1. GATE 2. SOURCE 123. DRAINFEATURE APPLICATION Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable

DATA SHEET 2N7002KW N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 300 mA FEATURES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND DRIVE APPLICATION. ESD MIL-STD883 ,1KV CONTACT DISCHARGE COMPLIANT PROTECTION. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA HIGDENSITY CELL DESIGN FOR LOW RDS

2N7002N-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Converters

2N7002KN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, RDS(ON) = 4(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 4(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. ESD protected up to 2K V1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Comp

AGM2N7002 General DescriptionProduct SummaryThe AGM2N7002 combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.60V 0.95 0.3A FeaturesAdvance high cell density Trench technologySOT-23 Pin ConfigurationLow R to mi

AGM2N7002K3Typical Performance Characteristicswww.agm-mos.com 3 VER2.65AGM2N7002K3SOT23Marking Instructions:www.agm-mos.com 5 VER2.65AGM2N7002K3Disclaimer:The information provided in this document is believed to be accurate and reliable.However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does notassume any responsibility for the following consequence

N-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Features Surface-mounted package 3 Extremely low threshold voltage Advanced trench cell design ESD protected ( HBM > 2KV ) Applications Portable appliances 2 Quick reference 11 BV 60 V Ptot 0.83 W ID 0.43 A BV60 V Ptot 0.83 W ID 0.43 A RDS(ON) 3 @ VGS =

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units2 VDS Drain-Source Voltage 60 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 115 mA SOT-523 PD Power Dissipation 1

2N7002K 60V/0.3A N Channel Advanced Power MOSFET Features Low RDS(on) @VGS=10V V R Typ I Max (BR)DSS DS(ON) D 5V Logic Level Control2.2 @ 10V N Channel SOT23 Package60V 0.3A HMB ESD Protection 2KV2.8 @ 4.5V Pb-Free, RoHS CompliantApplications Logic level translators High-speed line drivers Low-side load switch Switching circu

2N7002KW SOT-323 N-Channel Enhancement MOSFET3FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage21.GateLow Input Capacitance2.SourceFast Switching Speed 3.Drain1Low Input/Output Leakage Simplified outline(SOT-323) ESD Protected 2KV HBMDrainGate GateProtectionSourceDiodeAbsolute Maximum Ratings Ta=25Parameter Symbol Rating UnitDrain

A2N7002 K SOT-23 N-Channel Enhancement MOSFET3 High Speed Switching ApplicationsESD protected gate2 1.GATELow ON-resistance2.SOURCERDS(on) = 2.8 (typ.) (@VGS = 10 V) 3.DRAIN1RDS(on) = 3.1 (typ.) (@VGS = 5 V) Simplified outline(SOT-23)RDS(on) = 3.2 (typ.) (@VGS = 4.5 V)3 Marking Code:NJ 1 2Equivalent Circuit (top view)Absolute Maximum Ratings

2N7002K MOSFET(N-Channel) SOT-23 V(BR)DSS RDS(ON)MAX ID SOT-23 Plastic-Encapsulate MOSFET 5@10V 60V 340mA 5.3@4.5V Features SOT-23 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ESD protected Load Switch for Portable

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate Mosfets 2N7002K N-Channel MosfetFeatures High density cell design for low RDS (ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected up to 2KV1. GateMarking: 702 2. Source3. DrainMaximum Ratings (T =25C unless otherwise

MMBT55512N7002AO3400SI23052N7002N-Channel Enhancement Mode Field Effect TransistorDescription These N-channel enhancement mode field effect transis-tors SOT-23are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performan

WST2N7002 N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mAof the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full

WST2N7002A N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mAexcellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

WST2N7002K N-Ch MOSFETProduct SummeryGeneral Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mAgate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002K 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

VS2N7002K 60V/760mA N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),typ@VGS=10V 1 N-Channel R DS(on),typ@VGS=4.5V 1.1 Enhancement Mode I D 0.76 A Fast Switching ESD Protected by HBM up to 2.5KV SOT23 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS2N7002K SOT23 72K 3000pcs/reel

2N7002Ewww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

2N7002KBwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

2N7002Twww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

2N7002BKwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

V2.5

Marking RK * Or RK* =wafer tracking no

V2.5

RoHS COMPLIANT 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

RoHS COMPLIANT 2N7002 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / O

RoHS COMPLIANT 2N7002K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance F

RoHS COMPLIANT 2N7002KDW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance

TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) 2 ID (at VGS =10V) 0.35A Low Gate Charge RDS(ON) (at VGS =10V)

H General Description VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMP

isc N-Channel MOSFET Transistor 2N7054FEATURESDrain Current I =43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor 2N7000FEATURESWith TO-92 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor 2N7055FEATURESDrain Current: I = 33A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch mode power suppliesActive power factor corre

Isc N-Channel MOSFET Transistor IXTA12N70X2FEATURESWith TO-263(D2PAK) packagingLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

isc N-Channel MOSFET Transistor 2N7076DESCRIPTIONDrain Current I =28A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

isc N-Channel MOSFET Transistor 2N7058FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AP2N7002A 60V N-Channel Enhancement Mode MOSFET Description The AP2N7002A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =0.3A DS DR