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10N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 10N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 178 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 69 nS
   Conductancia de drenaje-sustrato (Cd): 166 pF
   Resistencia entre drenaje y fuente RDS(on): 0.72 Ohm
   Paquete / Cubierta: TO-263 TO-220 TO-262 TO-220F TO-220F1 TO-220F2

 Búsqueda de reemplazo de MOSFET 10N65

 

10N65 Datasheet (PDF)

 ..1. Size:381K  utc
10n65.pdf

10N65 10N65

UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

 ..2. Size:2843K  umw-ic
10n65.pdf

10N65 10N65

RUMWUMW 10N65UMW 10N65N- MOSN- MOSN- MOSN- MOS TC=25CTC=25CTC=25CTC=25CAbsolute Maximum RatingsTc=25C TO-220Absolute Maximum RatingsTc=25C TO-220Absolute Maximum RatingsTc=25C TO-220Absolute Maximum RatingsTc=25C TO-220/220F/262/263 PARAMETER

 0.1. Size:601K  1
svf10n65f svf10n65t.pdf

10N65 10N65

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 0.2. Size:771K  st
stl10n65m2.pdf

10N65 10N65

STL10N65M2DatasheetN-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageFeaturesVDS RDS(on ) max. IDOrder codeSTL10N65M2 650 V 1.00 4.5 A12 Extremely low gate charge34 Excellent output capacitance (COSS) profilePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedD(5, 6, 7, 8)8 7 6 5Applications Switch

 0.3. Size:1300K  st
stb10n65k3 stfi10n65k3 stp10n65k3.pdf

10N65 10N65

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 0.4. Size:1300K  st
stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf

10N65 10N65

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 0.5. Size:703K  fairchild semi
fcp110n65f.pdf

10N65 10N65

August 2014FCP110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98

 0.6. Size:1362K  fairchild semi
fch110n65f.pdf

10N65 10N65

December 2014FCH110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg

 0.7. Size:695K  fairchild semi
fcb110n65f.pdf

10N65 10N65

April 2015FCB110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC

 0.8. Size:3303K  infineon
ika10n65et6.pdf

10N65 10N65

IKA10N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

 0.9. Size:233K  ixys
ixxr110n65b4h1.pdf

10N65 10N65

VCES = 650VXPTTM 650V GenX4TM IXXR110N65B4H1IC110 = 70Aw/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab)tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCVGES Continuous 20 V Isolated Ta

 0.10. Size:217K  ixys
ixyp10n65c3d1.pdf

10N65 10N65

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE

 0.11. Size:196K  ixys
ixyp10n65c3d1m.pdf

10N65 10N65

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1MGenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab)tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

 0.12. Size:167K  ixys
ixxh110n65c4.pdf

10N65 10N65

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC

 0.13. Size:218K  ixys
ixxn110n65c4h1.pdf

10N65 10N65

VCES = 650VXPTTM 650V GenX4TM IXXN110N65C4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M

 0.14. Size:224K  ixys
ixxn110n65b4h1.pdf

10N65 10N65

VCES = 650VXPTTM 650V GenX4TM IXXN110N65B4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 6

 0.15. Size:259K  ixys
ixxk110n65b4h1.pdf

10N65 10N65

VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)

 0.16. Size:259K  ixys
ixxx110n65b4h1.pdf

10N65 10N65

VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)

 0.17. Size:214K  ixys
ixyp10n65c3.pdf

10N65 10N65

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTa

 0.18. Size:798K  onsemi
fcp110n65f.pdf

10N65 10N65

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.19. Size:2503K  onsemi
fch110n65f.pdf

10N65 10N65

FCH110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150CSuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC)and lower g

 0.20. Size:803K  onsemi
fcb110n65f.pdf

10N65 10N65

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.21. Size:466K  onsemi
ntb110n65s3hf.pdf

10N65 10N65

NTB110N65S3HFMOSFET NChannel,SUPERFET III, FRFET650 V, 30 A, 110 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON) MAX ID

 0.22. Size:422K  onsemi
nthl110n65s3f.pdf

10N65 10N65

NTHL110N65S3FMOSFET Power, N-Channel,SUPERFET III, FRFET650 V, 30 A, 110 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(on) MAX ID MAXcharge performance. This advanced technology is tailored to

 0.23. Size:235K  onsemi
nvb110n65s3f.pdf

10N65 10N65

MOSFET Power, SingleN-Channel, D2PAK650 V, 110 mW, 30 ANVB110N65S3FDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX

 0.24. Size:300K  onsemi
ntpf110n65s3hf.pdf

10N65 10N65

NTPF110N65S3HFMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 30 A, 110 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 110 mW @ 10 V 30 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advance

 0.25. Size:369K  onsemi
ntp110n65s3hf.pdf

10N65 10N65

NTP110N65S3HFMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 30 A, 110 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 110 mW @ 10 V 30 Acharge performance. This advanced

 0.26. Size:215K  utc
10n65kl-ta3-t 10n65kg-ta3-t 10n65kl-tf1-t 10n65kg-tf1-t 10n65kl-tf2-t 10n65kg-tf2-t.pdf

10N65 10N65

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the

 0.27. Size:227K  utc
10n65k.pdf

10N65 10N65

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir

 0.28. Size:229K  utc
10n65kl-ta3-t 10n65kg-ta3-t 10n65kl-tf3-t 10n65kg-tf3-t 10n65kl-tf1-t 10n65kg-tf1-t 10n65kl-tf2-t 10n65kg-tf2-t 10n65kl-t2q-t 10n65kg-t2q-t.pdf

10N65 10N65

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir

 0.29. Size:202K  utc
10n65z.pdf

10N65 10N65

UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

 0.30. Size:215K  utc
10n65kl-tf3-t 10n65kg-tf3-t 10n65kl-tm3-t 10n65kg-tm3-t 10n65kl-tn3-r 10n65kg-tn3-r.pdf

10N65 10N65

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the

 0.31. Size:390K  jiangsu
cjpf10n65.pdf

10N65 10N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s

 0.32. Size:375K  jiangsu
cjp10n65.pdf

10N65 10N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP10N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig

 0.33. Size:381K  kec
kf10n65f.pdf

10N65 10N65

KF10N65FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

 0.34. Size:385K  cet
cep10n65 ceb10n65 cef10n65.pdf

10N65 10N65

CEP10N65/CEB10N65CEF10N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP10N65 650V 0.85 10A 10VCEB10N65 650V 0.85 10A 10VCEF10N65 650V 0.85 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CE

 0.35. Size:170K  hsmc
h10n65.pdf

10N65 10N65

Spec. No. : MOS200906 HI-SINCERITY Issued Date : 2009.03.23 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H10N65 Series H10N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power MOSFET (650V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable P

 0.36. Size:341K  aosemi
aowf10n65.pdf

10N65 10N65

AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.37. Size:203K  aosemi
aot10n65.pdf

10N65 10N65

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.38. Size:203K  aosemi
aotf10n65.pdf

10N65 10N65

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.39. Size:341K  aosemi
aow10n65.pdf

10N65 10N65

AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.40. Size:526K  alfa-mos
afn10n65t220ft afn10n65t220t.pdf

10N65 10N65

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

 0.41. Size:291K  sisemi
sif10n65c.pdf

10N65 10N65

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF10N65CN- MOS / N-CHANNEL POWER MOSFET SIF10N65C

 0.42. Size:830K  jilin sino
jcs10n65f.pdf

10N65 10N65

R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 0.43. Size:1484K  jilin sino
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf

10N65 10N65

N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE

 0.44. Size:665K  cystek
mtn10n65ea.pdf

10N65 10N65

Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

 0.45. Size:317K  cystek
mtn10n65fpg.pdf

10N65 10N65

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 0.46. Size:355K  cystek
mtn10n65fp.pdf

10N65 10N65

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

 0.47. Size:1852K  goford
10n65a 10n65af.pdf

10N65 10N65

10N65A/10N65AFGOFORDDescription Features VDSS RDS(ON) ID @10V (typ) 10A650V 0.72 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220

 0.48. Size:532K  silikron
ssf10n65.pdf

10N65 10N65

SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.49. Size:1019K  blue-rocket-elect
brfl10n65.pdf

10N65 10N65

BRFL10N65 Rev.F Dec.-2017 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effi

 0.50. Size:991K  blue-rocket-elect
brf10n65.pdf

10N65 10N65

BRF10N65(BRCS10N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited f

 0.51. Size:356K  crhj
cs10n65 a8hd.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.52. Size:273K  crhj
cs10n65f a9r.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.53. Size:351K  crhj
cs10n65f a9hd.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 0.54. Size:267K  crhj
cs10n65 a8r.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65 A8R General Description VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.55. Size:125K  jdsemi
cm10n65f.pdf

10N65 10N65

RCM10N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

 0.56. Size:122K  jdsemi
cm10n65az.pdf

10N65 10N65

RCM10N65AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2

 0.57. Size:125K  jdsemi
cm10n65afz.pdf

10N65

RCM10N65AFZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1

 0.58. Size:283K  first silicon
ftk10n65p f dd.pdf

10N65 10N65

SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul

 0.59. Size:403K  silan
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf

10N65 10N65

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

 0.60. Size:290K  silan
svf10n65cfj.pdf

10N65 10N65

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

 0.61. Size:361K  silan
svf10n65cf svf10n65ck svf10n65cfjh.pdf

10N65 10N65

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.

 0.62. Size:414K  silan
svf10n65ca.pdf

10N65 10N65

SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13

 0.63. Size:881K  magnachip
mdf10n65bth.pdf

10N65 10N65

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GSquality. Applications MDF10N65B is suitable device for

 0.64. Size:1078K  bruckewell
msf10n65.pdf

10N65 10N65

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

 0.65. Size:854K  bruckewell
ms10n65.pdf

10N65 10N65

MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150

 0.66. Size:792K  winsemi
wfp10n65.pdf

10N65 10N65

WFP10N65WFP10N65WFP10N65WFP10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

 0.67. Size:801K  winsemi
wff10n65.pdf

10N65 10N65

WFF10N65WFF10N65WFF10N65WFF10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

 0.68. Size:603K  feihonltd
fhp10n65b fhf10n65b.pdf

10N65 10N65

N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.75 @Vgs=10V 100% 100% avalanche tested Qg-typ 30nC dv/dt

 0.69. Size:543K  feihonltd
fhp10n65a fhf10n65a.pdf

10N65 10N65

N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATIONHigh efficiency switch mode pow

 0.70. Size:129K  hy
hy10n65t.pdf

10N65 10N65

HY10N65T / HY10N65FT650V / 10A650V, RDS(ON)=1.0@VGS=10V, ID=5.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

 0.71. Size:507K  jiaensemi
jfpc10n65ci.pdf

10N65 10N65

JFPC10N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.8@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst

 0.72. Size:777K  jiaensemi
jfpc10n65d.pdf

10N65 10N65

JFPC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.73. Size:822K  jiaensemi
jffc10n65d.pdf

10N65 10N65

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.74. Size:845K  jiaensemi
jfpc10n65c jffc10n65c.pdf

10N65 10N65

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.75. Size:289K  kia
kia10n65h.pdf

10N65 10N65

10A650V10N65HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA10N65HN-Channel enhancement mode silicon gate power MOSFETis designedfor high voltage, high speed power switching applications such as high efficiency switched mode powersupplies, active power factor correction,electronic lampballasts based on half bridge to pology.2.

 0.76. Size:1189K  maple semi
slp10n65c slf10n65c.pdf

10N65 10N65

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 0.77. Size:666K  maple semi
slp10n65s slf10n65s.pdf

10N65 10N65

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

 0.78. Size:978K  maple semi
slp10n65a slf10n65a.pdf

10N65 10N65

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi

 0.79. Size:739K  pipsemi
psa10n65c.pdf

10N65 10N65

PSA10N65C 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.70 10A RDS(ON),typ.=0.70 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1

 0.80. Size:728K  samwin
sw10n65 swp10n65 swf10n65.pdf

10N65 10N65

SAMWINSW10N65N-channel MOSFETTO-220F TO-220BVDSS : 650VFeaturesID : 10.0A High ruggednessRDS(ON) : 1.1ohm RDS(ON) (Max 1.1)@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This

 0.81. Size:251K  sanrise-tech
srm10n65.pdf

10N65 10N65

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 0.82. Size:159K  semihow
hfs10n65s.pdf

10N65 10N65

March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area

 0.83. Size:302K  semihow
hfs10n65u.pdf

10N65 10N65

Oct 2013BVDSS = 650 VRDS(on) typ = 0.8 HFS10N65UID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

 0.84. Size:172K  semihow
hfp10n65s.pdf

10N65 10N65

March 2014BVDSS = 650 VRDS(on) typ HFP10N65SID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 0.85. Size:201K  semihow
hfp10n65u.pdf

10N65 10N65

March 2013BVDSS = 650 VRDS(on) typ = 0.8 HFP10N65U ID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 0.86. Size:634K  semihow
hfs10n65js.pdf

10N65 10N65

Feb 2023HFS10N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 10 A Excellent Switching CharacteristicsRDS(on), Typ 0.82 100% Avalanche TestedQg, Typ 36.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 0.87. Size:1595K  slkor
sl10n65f.pdf

10N65 10N65

SL10N65FN-CHANNEL MOSFET MAIN CHARACTERISTICS10AID650VVDSS0.94R V =10VDS(ON) GS35nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate

 0.88. Size:577K  trinnotech
tmp10n65 tmpf10n65.pdf

10N65 10N65

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

 0.89. Size:607K  trinnotech
tmp10n65a tmpf10n65a.pdf

10N65 10N65

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

 0.90. Size:1254K  truesemi
tsp10n65m tsf10n65m.pdf

10N65 10N65

TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

 0.91. Size:1354K  way-on
wml10n65d1b wmk10n65d1b.pdf

10N65 10N65

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 0.92. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf

10N65 10N65

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 0.93. Size:659K  way-on
wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf

10N65 10N65

WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 0.94. Size:227K  wuxi china
cs10n65fa9hd.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 0.95. Size:396K  wuxi china
gn10n65a4.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R GN10N65 A4 General Description VDSS 650 V GN10N65 A4, the silicon N-channel Enhanced ID 10 A PD(TC=25) 110 W VDMOSFETs, is obtained by the double-shield Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.96. Size:356K  wuxi china
cs10n65a8hd.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.97. Size:273K  wuxi china
cs10n65fa9r.pdf

10N65 10N65

Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.98. Size:1737K  anbon
at10n65s af10n65s ak10n65s ag10n65s.pdf

10N65 10N65

 0.99. Size:1286K  anbon
au10n65s.pdf

10N65 10N65

AU10N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.3@10V 10A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-251AB Marking D U10N65S G D S Document ID Issued Date Revised Date Revision Page. Page 1 AS-3

 0.100. Size:6079K  desay
dm10n65c.pdf

10N65 10N65

 0.101. Size:401K  convert
cs10n65ff.pdf

10N65 10N65

nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65FF TO-220F CS10N65FFAbsolute

 0.102. Size:706K  convert
cs10n65f cs10n65p cs10n65k.pdf

10N65 10N65

nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65F,CS10N65P,CS10N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65F TO-220F CS1

 0.103. Size:1909K  first semi
fir10n65fg.pdf

10N65 10N65

FIR10N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.) G Low gate charge : Qg=35nC(Typ.) D S Low RDS(on) : RDS(on)=0.8D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR10N65FFIR10N65F = Specific Device CodeAbsolu

 0.104. Size:901K  huake
smf10n65.pdf

10N65 10N65

SMF10N65650V N-Channnel MOSFETFeatures 10.0A, 650V, R =0.80@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va

 0.105. Size:1531K  huashuo
hsf10n65.pdf

10N65 10N65

HSF10N65 Product Summary Description VDS 650 V The HSF10N65 utilizes the advanced technology and low resistance package to RDS(ON),typ 800 m achieve extremely low on-resistance device which makes the system design an efficient ID 10 A and reliable solution for use in a wide variety of applications. TO220F Pin Configuration High Efficiency 100% EAS Guarante

 0.106. Size:1293K  lonten
lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf

10N65 10N65

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)

 0.107. Size:1051K  lonten
lnd10n65 lnc10n65 lne10n65 lnf10n65.pdf

10N65 10N65

LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate

 0.108. Size:403K  cn shandong jingdao microelectronics
f10n65.pdf

10N65 10N65

Jingdao Microelectronics co.LTDF10N65ITO-220ABW10A, 650V N-CHANNEL POWER MOSFETDESCRIPTIONThe F10N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This pow

 0.109. Size:6851K  cn puolop
ptf10n65.pdf

10N65 10N65

PTF1 0N6565 0V/1 0A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above

 0.110. Size:909K  cn sinai power
spc10n65g.pdf

10N65 10N65

SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App

 0.111. Size:2396K  winsok
wsr10n65f.pdf

10N65 10N65

WSR10N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR10N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 0.8 10Aof the synchronous buck converter applications . Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS AC/DC

 0.112. Size:1202K  cn sps
smirf10n65.pdf

10N65 10N65

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

 0.113. Size:617K  cn vbsemi
vbzmb10n65.pdf

10N65 10N65

VBZMB10N65 www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Config

 0.114. Size:223K  cn yangzhou yangjie elec
dgp10n65ctl.pdf

10N65 10N65

RoHS DGP10N65CTL COMPLIANT IGBT Descrete V 650 V CEI 10 A CV I = A 1.65 V CE(SAT) C 10 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness,

 0.115. Size:340K  cn wuxi unigroup
tma10n65h tmp10n65h.pdf

10N65 10N65

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1

 0.116. Size:254K  inchange semiconductor
fcb110n65f.pdf

10N65 10N65

isc N-Channel MOSFET Transistor FCB110N65FFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 0.117. Size:261K  inchange semiconductor
aot10n65.pdf

10N65 10N65

isc N-Channel MOSFET Transistor AOT10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.118. Size:255K  inchange semiconductor
aotf10n65.pdf

10N65 10N65

isc N-Channel MOSFET Transistor AOTF10N65FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 0.119. Size:299K  inchange semiconductor
aow10n65.pdf

10N65 10N65

isc N-Channel MOSFET Transistor AOW10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... 15N70 , 6N65Z , 7N65A , 7N65 , 7N65Z , 7N65K , 8N65 , 9N65 , AO4466 , 10N65Z , 10N65K , 15N65 , 18N65 , 20N65 , 22N65 , 1N65A , 1N65 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWF9N50D | SWF8N80K | SWF8N70K | SWF8N65D | SWF8N60D | SWF830D1 | SWF7N70K | SWF7N65M | SWF7N65K2 | SWF7N65K | SWF7N65DD | SWF7N60K | SWF740D | SWF6N90D | SWF6N70DB | SWF6N70D

 

 

 
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