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 ..1. Size:410K  utc
 3n65.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicati

 0.1. Size:636K  st
 stl13n65m2.pdf

STL13N65M2 N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max ID STL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 1 2 3 100% avalanche tested 4 Zener-protected PowerFLAT 5x6 HV Applications S

 0.2. Size:706K  st
 stw63n65dm2.pdf

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme

 0.3. Size:550K  st
 std13n65m2.pdf

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. I

 0.4. Size:794K  st
 stb33n65m2 stf33n65m2 sti33n65m2 stp33n65m2.pdf

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and I PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 24 A STP33N65M2 TAB TAB STI33N65M2 Extremely low gate charge Exce

 0.5. Size:545K  st
 stp13n65m2 stu13n65m2.pdf

STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features RDS(on) Order code VDS ID max TAB STP13N65M2 TAB 650 V 0.43 10A STU13N65M2 3 2 1 3 2 Extremely low gate charge 1 TO-220 Excellent output capacitance (Coss) profile IPAK 100% avalanche tested Zener-pr

 0.6. Size:564K  st
 stf13n65m2 stfi13n65m2.pdf

 0.7. Size:1285K  onsemi
 fch023n65s3.pdf

www.onsemi.com FCH023N65S3 N-Channel SuperFET III MOSFET 650 V, 75 A, 23 m Features Description 700 V @ TJ = 150 C SuperFET III MOSFET is ON Semiconductor s brand- new high voltage super-junction (SJ) MOSFET family that is uti- Typ. RDS(on) = 19.5 m lizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Qg = 222 nC) tance and

 0.8. Size:448K  onsemi
 nthl033n65s3hf.pdf

NTHL033N65S3HF MOSFET Power, N Channel, SUPERFET III, FRFET www.onsemi.com 650 V, 70 A, 33 mW Description VDSS RDS(ON) MAX ID MAX SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 33 mW @ 10 V 70 A balance technology for outstanding low on-resistance and lower gate charge performance. This advanc

 0.9. Size:344K  utc
 3n65z.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switchi

 0.10. Size:358K  utc
 3n65a.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli

 0.11. Size:390K  utc
 3n65k.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N65K Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicati

 0.12. Size:354K  cystek
 mtn3n65fp.pdf

Spec. No. C798FP Issued Date 2010.03.12 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.6 (typ.) MTN3N65FP ID 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 0.13. Size:345K  crhj
 cs3n65 a4h-g.pdf

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.14. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F

 0.15. Size:376K  silan
 svf3n65vfj.pdf

 0.16. Size:811K  magnachip
 mdf13n65bth.pdf

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

 0.17. Size:830K  magnachip
 mdf13n65b.pdf

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

 0.18. Size:421K  ruichips
 ru13n65r.pdf

RU13N65R N-Channel Advanced Power MOSFET Features Pin Description 650V/13A, RDS (ON) =650m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G DS TO220 D D D D D Applications D pp D AC/DC Power Conversion i

 0.19. Size:509K  jiaensemi
 jfpc13n65ci.pdf

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 0.20. Size:827K  jiaensemi
 jffc13n65d.pdf

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.21. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 0.22. Size:827K  jiaensemi
 jffm13n65d.pdf

JFFM13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.23. Size:388K  pipsemi
 ptp13n65 pta13n65.pdf

PTP13N65 PTA13N65 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 650V 0.55 13A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Bran

 0.24. Size:818K  samwin
 swf13n65d.pdf

SW13N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.6 )@VGS=10V ID 13A Low Gate Charge (Typ 54nC) RDS(ON) 0.6 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, Charger, PC Power 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced

 0.25. Size:1576K  samwin
 swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

 0.26. Size:186K  semihow
 hfs13n65u.pdf

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFS13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

 0.27. Size:194K  semihow
 hfp13n65u.pdf

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFP13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

 0.28. Size:316K  ubiq
 qm03n65f.pdf

QM03N65F 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM03N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 3A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65F mee

 0.29. Size:343K  ubiq
 qm03n65d.pdf

QM03N65D 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM03N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 3A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65D mee

 0.30. Size:670K  way-on
 wml53n65c4 wmk53n65c4 wmn53n65c4 wmm53n65c4 wmj53n65c4.pdf

WML53N MK53N65C N65C4, WM C4 WMN53N65C4, WMM53N MJ53N65C N65C4, WM C4 650V 0.06 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4 is ate

 0.31. Size:669K  way-on
 wml53n65f2 wmk53n65f2 wmn53n65f2 wmm53n65f2 wmj53n65f2.pdf

WML53N MK53N65F N65F2, WM F2 WMN , WMM53N MJ53N65F N53N65F2, N65F2, WM F2 650V 0.062 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET f

 0.32. Size:663K  way-on
 wml13n65em wmk13n65em wmm13n65em wmn13n65em wmp13n65em wmo13n65em.pdf

WML13 WMK13N6 3N65EM, W 65EM, WMM13N65EM WMN13 WMP13N6 3N65EM, W 65EM, WMO13N65EM 650V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch

 0.33. Size:345K  wuxi china
 cs3n65a4h-g.pdf

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.34. Size:434K  convert
 cs3n65f cs3n65p cs3n65u cs3n65d.pdf

nvert CS3N65F,CS3N65P,CS3N65U,CS3N65D Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N65F TO-220F

 0.35. Size:428K  convert
 cs3n65lf 3n65lu.pdf

nvert CS3N65LF,3N65LU Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N65LF TO-220F CS3N65LF CS3N

 0.36. Size:692K  convert
 cs13n65p cs13n65f.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS13N65P,CS13N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS13N65F TO-220F CS13N65F CS