3N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 51 nC
Tiempo de subida (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 77 pF
Resistencia entre drenaje y fuente RDS(on): 2.9 Ohm
Paquete / Cubierta: TO-220 TO-251 TO-252 TO-220F DFN-8
Búsqueda de reemplazo de MOSFET 3N65
3N65 Datasheet (PDF)
3n65.pdf
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UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicati
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UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220FThe UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switchi
3n65a.pdf
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mtn3n65fp.pdf
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cs3n65 a4h-g.pdf
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SVF3N65VFJ 5A650V N 2SVF3N65VFJ N MOS F-CellTM VDMOS 13 1. 2. 3.
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MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device
mdf13n65b.pdf
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JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan
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swf13n65d.pdf
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SW13N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.6)@VGS=10VID : 13A Low Gate Charge (Typ 54nC)RDS(ON) : 0.6 Improved dv/dt Capability 100% Avalanche Tested21 Application: LED, Charger, PC Power2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produced
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SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3
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March 2013BVDSS = 650 VRDS(on) typ = 0.4 HFS13N65U ID = 14.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area
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March 2013BVDSS = 650 VRDS(on) typ = 0.4 HFP13N65U ID = 14.0 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area
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cs3n65a4h-g.pdf
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS13N65P,CS13N65F650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS13N65F TO-220F CS13N65FCS
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