5N65K Todos los transistores

 ..1. Size:223K  utc
 5n65k.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N65K Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K is a high voltage power MOSFET designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche TO-220F characteristics. This power MOSFET is usually used in high speed switching applications a

 ..2. Size:285K  inchange semiconductor
 5n65k.pdf

isc N-Channel MOSFET Transistor 5N65K FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 2.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.1. Size:836K  1
 swd5n65k.pdf

SW5N65K N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 650V ID 5A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 10.3nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charge, Adaptor 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFE

 0.2. Size:242K  utc
 5n65kl-ta3-t 5n65kg-ta3-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kl-tf1-t 5n65kg-tf1-t 5n65kl-tf2-t 5n65kg-tf2-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kl-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at po

 0.3. Size:242K  utc
 5n65kl-tm3-t 5n65kg-tm3-t 5n65kl-tms-t 5n65kg-tms-t 5n65kl-tms2-t 5n65kg-tms2-t 5n65kl-tms4-t 5n65kg-tms4-t 5n65kl-tn3-r 5n65kg-tn3-r 5n65kg-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at po

 0.4. Size:243K  utc
 5n65kl-tm3-t 5n65kg-tm3-t 5n65kl-tms-t 5n65kg-tms-t 5n65kl-tms2-t 5n65kg-tms2-t 5n65kl-tms4-t 5n65kg-tms4-t 5n65kl-tn3-r 5n65kg-tn3-r 5n65kl-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MTQ Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at

 0.5. Size:243K  utc
 5n65kl-ta3-t 5n65kg-ta3-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kl-tf1-t 5n65kg-tf1-t 5n65kl-tf2-t 5n65kg-tf2-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kg-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MTQ Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at

 0.6. Size:327K  kec
 kgf75n65kdf.pdf

SEMICONDUCTOR KGF75N65KDF TECHNICAL DATA General Description B KEC Field Stop Trench IGBTs offer low switching losses, high energy A O S K efficiency and short circuit ruggedness. It is designed for applications such as Power Factor Correction(PFC), Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS _ + A 15.90 0.30 Converters. _ B 5.00 + 0

 0.7. Size:718K  oriental semi
 ost15n65krf.pdf

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 0.8. Size:655K  samwin
 swt45n65k2.pdf

SW45N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 45A High ruggedness RDS(ON) 61m Low RDS(ON) (Typ 61m )@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSF

 0.9. Size:650K  samwin
 swt45n65k2f.pdf

SW45N65K2F N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 45A High ruggedness RDS(ON) 66m Low RDS(ON) (Typ 66m )@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOS

 0.10. Size:667K  samwin
 swd5n65k.pdf

SW5N65K N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 650V ID 5A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 10.3nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charger, Adaptor 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSF

 0.11. Size:578K  cn hmsemi
 hms15n65i hms15n65k.pdf

HMS15N65I / HMS15N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial

 0.12. Size:885K  cn hmsemi
 hm5n65k hm5n65i.pdf

HM5N65K/HM5N65I HM5N65K / HM5N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switchi