3N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

RoHS 13N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET13A, 600VoltsDESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability ofD13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts. They are designed for use in applications suchas s

RoHS 3N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(3A, 600Volts)DESCRIPTIOND The Nell 3N60 is a three-terminal silicon Ddevice with current conduction capabilityof 3A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit