3N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3N60A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 50 pF
Resistencia entre drenaje y fuente RDS(on): 2.8 Ohm
Paquete / Cubierta: TO-252 TO-220F
Búsqueda de reemplazo de MOSFET 3N60A
3N60A Datasheet (PDF)
3n60a.pdf
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Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
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