24N50 Todos los transistores

 

24N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 24N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 290 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 250 nS

Conductancia de drenaje-sustrato (Cd): 520 pF

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: TO-247_TO-3P

Búsqueda de reemplazo de MOSFET 24N50

 

24N50 Datasheet (PDF)

1.1. sff24n50b.pdf Size:152K _upd-mosfet

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1.2. fqa24n50 f109.pdf Size:749K _upd-mosfet

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 90 nC) planar stripe, DMOS technology. • Low Crss ( typical 55 pF) This advanced technology has been e

 1.3. fqa24n50f.pdf Size:641K _upd-mosfet

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September 2001 TM FRFET FQA24N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 90 nC) planar stripe, DMOS technology. • Low Crss ( typical 55 pF) This advanced technology has been especially tail

1.4. sff24n50.pdf Size:28K _upd-mosfet

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SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts DESIGNER’S DATA SHEET 0.2 N-Channel Features: Power MOSFET • Rugged Construction with Polysilicon Gate Cell • Low R and High Transconductance DS(ON) • Excellent H

 1.5. sff24n50n sff24n50p.pdf Size:166K _upd-mosfet

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1.6. cs24n50.pdf Size:124K _update_mosfet

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CS24N50 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 300 W 线性降低系数 0.40 W/℃ ID (VGS=10V,TC=25℃) 24 A 极 限 IDM 96 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.42 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 500 V RDS on) VGS=10V,ID=12A 0.23 Ω ( VGS th) VDS=VGS,ID=4mA 2.

1.7. fda24n50f.pdf Size:670K _fairchild_semi

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November 2008 UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2? Features Description RDS(on) = 0.166? ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 32pF) This advance technology has been especially tailore

1.8. fda24n50.pdf Size:688K _fairchild_semi

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August 2008 UniFETTM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19? Features Description RDS(on) = 0.16? ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been especially tailored to mi

1.9. fqa24n50f.pdf Size:663K _fairchild_semi

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September 2001 TM FRFET FQA24N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially tailored to Fa

1.10. fqa24n50.pdf Size:1520K _fairchild_semi

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June 2014 FQA24N50 N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ Features Description • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge (Typ. 90 nC) stripe, DMOS technology. • Low Crss (Typ. 55 pF) This advanced technology has been e

1.11. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

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VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS =

1.12. ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf Size:108K _ixys

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VDSS ID25 RDS(on) MegaMOSTMFET ? IXTH / IXTM 21N50 500 V 21 A 0.25 ? ? ? ? ? IXTH / IXTM 24N50 500 V 24 A 0.23 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 21N50 21 A TO-204 AE (IXTM) 24N50 24 A

1.13. ixfr24n50 ixfr26n50.pdf Size:33K _ixys

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Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 50

1.14. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

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HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 ? ? ? ? ? ? IXFH/IXFT 26N50Q 500 V 26 A 0.20 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V (TAB)

1.15. ixfr24n50q ixfr26n50q.pdf Size:78K _ixys

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VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 26N50Q 500 V 24 A 0.20 Ω Ω Ω Ω ISOPLUS247TM Ω IXFR 24N50Q 500 V 22 A 0.23 Ω Ω Ω Ω (Electrically Isolated Back Surface) ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C

1.16. 24n50.pdf Size:210K _utc

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UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

1.17. sdf24n50.pdf Size:153K _solitron

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1.18. cs24n50 anhd.pdf Size:678K _crhj

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Silicon N-Channel Power MOSFET R ○ CS24N50 ANHD General Description: VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.19. wfw24n50w.pdf Size:463K _winsemi

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WFW24N50W WFW24N50W WFW24N50W WFW24N50W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mod

1.20. wfw24n50n.pdf Size:428K _winsemi

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WFW24N50N WFW24N50N WFW24N50N WFW24N50N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mod

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