26N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

STE26N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V R I DSS DS(on) D STE26N50 500 V

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1

IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET RDS(on) 260 m ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transi

IXFC 26N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 15 A Power MOSFET RDS(on) 260 m ISOPLUS 220TM (Electrically Isolated Tab) trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFJ26N50P3 ID25 = 14A Power MOSFET RDS(on) 265m (Electrically Isolated Tab) N-Channel Enhancement Mode ISO TO-247TM Avalanche Rated E153432 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings G D Isolated Tab S VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 50

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TM IXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-268 (IXTT) VGSS Continuos 30 V

IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH)

BRCS26N50PA Rev.A Jan.-2019 DATA SHEET / Descriptions N TO-3P N-Channel MOSFET in a TO-3P Plastic Package. / Features RDS(ON) Qg Fast Intrinsic Rectifier,Low RDS(ON) and Qg,Low Package Inductance / Applications DC-DC

SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 S (TAB) E 4.32 5.49 0.170 0.216 D G F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 G=Gate, D=Drain, K 10.8 11.0 0.426 0.433 S=Source,TAB=Drain

isc N-Channel MOSFET Transistor IXTQ26N50P FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-