26N50 Todos los transistores

 

26N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 26N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 290 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 250 nS

Conductancia de drenaje-sustrato (Cd): 520 pF

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: TO-3P

Búsqueda de reemplazo de MOSFET 26N50

 

26N50 Datasheet (PDF)

0.1. ste26n50.pdf Size:153K _1

26N50
26N50

STE26N50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE26N50 500 V

0.2. ixfv26n50p ixfh26n50p.pdf Size:323K _ixys

26N50
26N50

IXFH 26N50P VDSS = 500 VPolarHVTM HiPerFETIXFV 26N50P ID25 = 26 APower MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH)

 0.3. ixtc26n50p.pdf Size:175K _ixys

26N50
26N50

IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi

0.4. ixfc26n50p.pdf Size:175K _ixys

26N50
26N50

IXFC 26N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS 220TM(Electrically Isolated Tab)trr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25

 0.5. ixfj26n50p3.pdf Size:146K _ixys

26N50
26N50

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFJ26N50P3ID25 = 14APower MOSFET RDS(on) 265m (Electrically Isolated Tab)N-Channel Enhancement ModeISO TO-247TMAvalanche RatedE153432Fast Intrinsic RectifierSymbol Test Conditions Maximum Ratings GDIsolated TabSVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C

0.6. ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Size:155K _ixys

26N50
26N50

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

0.7. ixfr24n50 ixfr26n50.pdf Size:33K _ixys

26N50
26N50

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50

0.8. ixtq26n50p ixtt26n50p ixtv26n50p.pdf Size:338K _ixys

26N50
26N50

IXTQ 26N50P VDSS = 500 VPolarHVTMIXTT 26N50P ID25 = 26 APower MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PSN-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 500 VDS D (TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VTO-268 (IXTT)VGSS Continuos 30 V

0.9. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

26N50
26N50

HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1

0.10. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

26N50
26N50

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to

0.11. ixfr24n50q ixfr26n50q.pdf Size:78K _ixys

26N50
26N50

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TMIXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement ModeHigh dV/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C to 150C

0.12. 26n50.pdf Size:181K _utc

26N50
26N50

UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

0.13. sdf26n50.pdf Size:159K _solitron

26N50

0.14. smos21n50 smos26n50.pdf Size:135K _sirectifier

26N50
26N50

SMOS21N50, SMOS26N50Power MOSFETsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640D 3.55 3.65 0.140 0.144S(TAB) E 4.32 5.49 0.170 0.216DG F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055G=Gate, D=Drain,K 10.8 11.0 0.426 0.433S=Source,TAB=Drain

0.15. ixtq26n50p.pdf Size:257K _inchange_semiconductor

26N50
26N50

isc N-Channel MOSFET Transistor IXTQ26N50PFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

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