26N50 Todos los transistores

 

26N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 26N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 290 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 250 nS

Conductancia de drenaje-sustrato (Cd): 520 pF

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: TO-3P

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26N50 Datasheet (PDF)

1.1. smos21n50 smos26n50.pdf Size:135K _update_mosfet

26N50
26N50

SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 S (TAB) E 4.32 5.49 0.170 0.216 D G F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 G=Gate, D=Drain, K 10.8 11.0 0.426 0.433 S=Source,TAB=Drain

1.2. ixfv26n50p ixfh26n50p.pdf Size:323K _ixys

26N50
26N50

IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET ? ? IXFV 26N50PS RDS(on) ? 230 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-247 (IXFH) VGSS Continuos 30 V VGSM Transient

 1.3. ixtc26n50p.pdf Size:175K _ixys

26N50
26N50

IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET ? ? RDS(on) ? 260 m? ? ? ? ? ? ? ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C15 A

1.4. ixfc26n50p.pdf Size:175K _ixys

26N50
26N50

IXFC 26N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 15 A Power MOSFET ? ? RDS(on) ? 260 m? ? ? ? ? ? ? ISOPLUS 220TM (Electrically Isolated Tab) ? trr ? 250 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS

 1.5. ixfj26n50p3.pdf Size:146K _ixys

26N50
26N50

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFJ26N50P3 ID25 = 14A Power MOSFET   RDS(on)    265m     (Electrically Isolated Tab) N-Channel Enhancement Mode ISO TO-247TM Avalanche Rated E153432 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings G D Isolated Tab S VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C

1.6. ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Size:155K _ixys

26N50
26N50

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 230mΩ ≤ Ω ≤ Ω IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

1.7. ixfr24n50 ixfr26n50.pdf Size:33K _ixys

26N50
26N50

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 50

1.8. ixtq26n50p ixtt26n50p ixtv26n50p.pdf Size:338K _ixys

26N50
26N50

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET ? ? IXTV 26N50P RDS(on) ? 230 m? ? ? ? ? ? ? IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-268 (IXTT) VGSS Continuos 30 V VGSM Transient 40 V ID25 TC

1.9. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

26N50
26N50

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 ? ? ? ? ? ? IXFH/IXFT 26N50Q 500 V 26 A 0.20 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V (TAB)

1.10. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

26N50
26N50

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS =

1.11. ixfr24n50q ixfr26n50q.pdf Size:78K _ixys

26N50
26N50

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 26N50Q 500 V 24 A 0.20 Ω Ω Ω Ω ISOPLUS247TM Ω IXFR 24N50Q 500 V 22 A 0.23 Ω Ω Ω Ω (Electrically Isolated Back Surface) ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C

1.12. 26n50.pdf Size:181K _utc

26N50
26N50

UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in

1.13. ixtq26n50p.pdf Size:257K _inchange_semiconductor

26N50
26N50

isc N-Channel MOSFET Transistor IXTQ26N50P ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-

1.14. sdf26n50.pdf Size:159K _solitron

26N50



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