4N40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 42 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO-220
TO-251
TO-252
TO-220F
Búsqueda de reemplazo de 4N40 MOSFET
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4N40 datasheet
..1. Size:160K utc
4n40.pdf 
UNISONIC TECHNOLOGIES CO., LTD 4N40 Preliminary Power MOSFET 4A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe 1 and DMOS technology. This technology specializes in allowing a TO-220F minimum on-state resistance and superior switching performance. It
0.1. Size:85K 1
hgtp14n40f3vl.pdf
HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT April 1995 Features Package Logic Level Gate Drive JEDEC TO-220AB Internal Voltage Clamp EMITTER COLLECTOR ESD Gate Protection GATE TJ = +150oC COLLECTOR (FLANGE) Ignition Energy Capable Applications Automotive Ignition Small Engine Ignition Fuel Ignitor Symbol Description
0.2. Size:109K motorola
mtw24n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW24N40E/D Designer's Data Sheet MTW24N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 24 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.16 OHM scheme to provi
0.3. Size:138K motorola
mtp4n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra
0.4. Size:174K motorola
mtw24n40erev4.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW24N40E/D Designer's Data Sheet MTW24N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 24 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.16 OHM scheme to provi
0.5. Size:239K motorola
mtp4n40erev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra
0.8. Size:296K fairchild semi
fdp24n40 fdpf24n40.pdf
December 2007 UniFETTM FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 46nC) stripe, DMOS technology. Low Crss ( Typ. 25pF) This advanced technology has b
0.9. Size:142K fairchild semi
fdh34n40.pdf
August 2002 FDH34N40 34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Converte
0.10. Size:687K fairchild semi
fda24n40f.pdf
December 2007 UniFETTM FDA24N40F tm N-Channel MOSFET, FRFET 400V, 23A, 0.19 Features Descripition RDS(on) = 0.15 ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (Typ. 46nC) DMOS technology. This advanced technology has been especially tailored
0.12. Size:42K harris semi
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf
RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi
0.13. Size:903K kec
kmb054n40ia.pdf
SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. RDS(ON)=8.5m (Max.) @ V
0.14. Size:816K kec
kmb054n40dc.pdf
SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
0.15. Size:241K kec
kmb054n40db.pdf
SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
0.16. Size:237K kec
kmb054n40da.pdf
SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
0.17. Size:190K samhop
sdf04n40 sdp04n40.pdf
SDP04N40 SDF04N40 a S mHop Microelectronics C orp. Ver 1.3 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 400V 4A 3.0 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar
0.18. Size:221K crhj
cs24n40f a9h.pdf
Silicon N-Channel Power MOSFET R CS24N40F A9H General Description VDSS 400 V CS24N40F A9H, the silicon N-channel Enhanced ID 24 A PD (TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.19. Size:344K crhj
cs24n40 a8.pdf
Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
0.21. Size:161K bruckewell
mss34n40.pdf
PRELIMINARY Bruckewell Technology Corp., Ltd. MSS34N40 N-Channel 40-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PRELIMI
0.23. Size:833K samwin
swsi4n40dc swd4n40dc.pdf
SW4N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-252 BVDSS 400V TO-251S ID 4A High ruggedness Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 11.7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application LED, DC-DC 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This
0.24. Size:344K wuxi china
cs24n40a8.pdf
Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
0.25. Size:301K inchange semiconductor
fdh34n40.pdf
isc N-Channel MOSFET Transistor FDH34N40 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
0.26. Size:258K inchange semiconductor
fda24n40f.pdf
isc N-Channel MOSFET Transistor FDA24N40F FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 190m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in high efficient switched mode power supplie
Otros transistores... 5N50
, 5N50K
, 6N50
, 7N50
, 8N50
, 1N40
, 2N40
, 3N40
, IRF1010E
, 5N40
, 6N40
, 7N40
, 8N40
, 9N40
, 10N40
, 11N40
, 12N40
.
History: AOW25S65
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