8N40 Todos los transistores

 

8N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 8N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm
   Paquete / Cubierta: TO-220 TO-252 TO-220F1

 Búsqueda de reemplazo de MOSFET 8N40

 

8N40 Datasheet (PDF)

 ..1. Size:189K  utc
8n40.pdf

8N40
8N40

UNISONIC TECHNOLOGIES CO., LTD 8N40 Power MOSFET Preliminary 8A, 400V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe 1and DMOS technology. This technology specializes in allowing a TO-220F1minimum on-state resistance and superior switching performanc

 ..2. Size:217K  inchange semiconductor
8n40.pdf

8N40
8N40

isc N-Channel MOSFET Transistor 8N40DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe ISC 8N40 is universally applied in electronic lamp ballastbased on half bridge topology and high efficient switchedmode p

 0.1. Size:126K  1
ngd18n40clb.pdf

8N40
8N40

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 0.2. Size:87K  1
ngb18n40clb.pdf

8N40
8N40

NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit

 0.3. Size:388K  motorola
mth8n35 mth8n40 mtm8n35 mtm8n40.pdf

8N40
8N40

 0.4. Size:888K  st
stgd18n40lz.pdf

8N40
8N40

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 0.5. Size:888K  st
stgb18n40lz.pdf

8N40
8N40

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 0.6. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf

8N40
8N40

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 0.7. Size:888K  st
stgp18n40lz.pdf

8N40
8N40

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 0.8. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf

8N40
8N40

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

 0.9. Size:888K  st
stgb18n40lzt4.pdf

8N40
8N40

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

 0.10. Size:125K  onsemi
ngb18n40a.pdf

8N40
8N40

NGB18N40CLB,NGB18N40ACLBIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped18 AMPS, 400 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.0 V @include Ignition, Direct Fuel Injection, or wherever hi

 0.11. Size:126K  onsemi
ngd18n40a.pdf

8N40
8N40

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 0.12. Size:149K  utc
18n40.pdf

8N40
8N40

UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. FEATURES * VDS = 400V * ID = 18A * RDS(ON)

 0.13. Size:376K  taitron
msu18n40.pdf

8N40
8N40

400V/18A POWER MOSFET (N-Channel) MSU18N40T 400V/18A Power MOSFET (N-Channel) General Description MSU18N40T is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commu

 0.14. Size:1112K  cn hmsemi
hm18n40 hm18n40f hm18n40a.pdf

8N40
8N40

HM18N40 / HM18N40F / HM18N40A400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 400V, RDS(on) typ. = 0.20@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast

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