9N40 Todos los transistores

 

9N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 9N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 113 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO-220, TO-220F1

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9N40 Datasheet (PDF)

1.1. stgd19n40lz.pdf Size:601K _st

9N40
9N40

STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified TAB • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH 3 • ESD gate-emitter protection 1 • Gate-collector high voltage clamping • Logic level gate drive DPAK • Low saturation voltage • Hig

1.2. std9n40m2.pdf Size:841K _st

9N40
9N40

STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus™ low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS(on) max ID STD9N40M2 450 V 0.8 Ω 6 A TAB • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 • Low gate input resistance DPAK • 100% avalanche tested • Zener-protected Applica

 1.3. fdp19n40 fdpf19n40.pdf Size:258K _fairchild_semi

9N40
9N40

October UniFETTM FDP19N40 / FDPF19N40 tm N-Channel MOSFET 400V, 19A, 0.24Ω Features Description • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 32nC) stripe, DMOS technology. • Low Crss ( Typ. 20pF) This advanced technology has been

1.4. 9n40.pdf Size:153K _utc

9N40
9N40

UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 8.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It 1

 1.5. kf9n40d.pdf Size:906K _kec

9N40
9N40

KF9N40D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for LED Convertor and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode power sup

1.6. kmb3d9n40ta.pdf Size:522K _kec

9N40
9N40

SEMICONDUCTOR KMB3D9N40TA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for Load switch and Back-Light B K DIM MILLIMETERS Inverter. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 2 3 _ D 0.4 + 0

1.7. aot9n40l.pdf Size:252K _aosemi

9N40
9N40

AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary VDS The AOT9N40 is fabricated using an advanced high 500V@150℃ voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 8A levels of performance and robustness in popular AC-DC < 0.8Ω RDS(ON) (at VGS=10V) applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche cap

1.8. aot9n40.pdf Size:252K _aosemi

9N40
9N40

AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary VDS The AOT9N40 is fabricated using an advanced high 500V@150℃ voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 8A levels of performance and robustness in popular AC-DC < 0.8Ω RDS(ON) (at VGS=10V) applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche cap

1.9. aod9n40.pdf Size:261K _aosemi

9N40
9N40

AOD9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high 500V@150℃ VDS levels of performance and robustness in popular AC-DC ID (at VGS=10V) 8A applications.By providing low RDS(on), Ciss and Crss along <0.8Ω RDS(ON) (at VGS=10V) with guaranteed avalanche ca

1.10. 9n40.pdf Size:2008K _goford

9N40
9N40

GOFORD 9N40 Description Features • VDSS RDS(ON) ID @ 10V (typ) Ω 0.515 9A 400V TO-252 TO-251 • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC-DC & DC-AC Converters for telecom, industrial and consumer environment • Uninterruptible Power Supply (UPS) • Switch Mode Low Power Supplies • Industrial Actuators T

1.11. cs19n40 a8h.pdf Size:426K _crhj

9N40
9N40

Silicon N-Channel Power MOSFET R ○ CS19N40 A8H VDSS 400 V General Description: ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.12. cs19n40 an.pdf Size:438K _crhj

9N40
9N40

Silicon N-Channel Power MOSFET R ○ CS19N40 AN VDSS 400 V General Description: ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.13. mdd9n40rh.pdf Size:834K _magnachip

9N40
9N40

 MDD9N40 N-Channel MOSFET 400V, 6A, 0.85Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 400V MagnaChip’s MOSFET Technology, which provides low on- ID = 6A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.85Ω @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed s

1.14. cs19n40a8h.pdf Size:426K _wuxi_china

9N40
9N40

Silicon N-Channel Power MOSFET R ○ CS19N40 A8H VDSS 400 V General Description: ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.15. cs19n40an.pdf Size:438K _wuxi_china

9N40
9N40

Silicon N-Channel Power MOSFET R ○ CS19N40 AN VDSS 400 V General Description: ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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