9N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 8.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 9N40 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It1

GOFORD9N40Description Features VDSS RDS(ON) ID @10V (typ) 0.515 9A400VTO-252TO-251 Fast switching 100% avalanche tested Improved dv/dt capability Application DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators T

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 9N40DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV

STGD19N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB 180 mJ of avalanche energy @ TC = 150 C, L = 3 mH3 ESD gate-emitter protection1 Gate-collector high voltage clamping Logic level gate driveDPAK Low saturation voltage Hig

STD9N40M2N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTD9N40M2 450 V 0.8 6 ATAB Extremely low gate charge3 Lower RDS(on) x area vs previous generation1 Low gate input resistanceDPAK 100% avalanche tested Zener-protectedApplica

October UniFETTMFDP19N40 / FDPF19N40tmN-Channel MOSFET 400V, 19A, 0.24Features Description RDS(on) =0.2 ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 32nC)stripe, DMOS technology. Low Crss ( Typ. 20pF)This advanced technology has been

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KF9N40DSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for LED Convertor and LC D_A 6.60 + 0.20_B 6.10 + 0.20switching mode power sup

SEMICONDUCTOR KMB3D9N40TATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightBKDIM MILLIMETERSInverter._A 2.9 + 0.2B 1.6+0.2/-0.1_C 0.70 + 0.0523_D 0.4 + 0

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

AOD9N40400V,8A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high 500V@150 VDSlevels of performance and robustness in popular AC-DC ID (at VGS=10V) 8Aapplications.By providing low RDS(on), Ciss and Crss along

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MDD9N40 N-Channel MOSFET 400V, 6A, 0.85General Description Features These N-channel MOSFET are produced using advanced VDS = 400V MagnaChips MOSFET Technology, which provides low on- ID = 6A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.85 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed s

BL19N40 Power MOSFET 1Description Step-Down Converter BL19N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

General Description VDSS 400 V HM19N40, the silicon N-channel Enhanced ID 19 A PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

isc N-Channel MOSFET Transistor AOT9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor FDP19N40FEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 240V(Min)DSSStatic Drain-Source On-Resistance: R = 240m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

isc N-Channel MOSFET Transistor AOD9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose