15N40 Todos los transistores

 

15N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 15N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 170 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 55 nS

Conductancia de drenaje-sustrato (Cd): 210 pF

Resistencia drenaje-fuente RDS(on): 0.26 Ohm

Empaquetado / Estuche: TO-220, TO-220F1

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15N40 Datasheet (PDF)

1.1. mtm15n40e.pdf Size:174K _update-mosfet

15N40
15N40



1.2. mth15n40.pdf Size:729K _update-mosfet

15N40
15N40



 1.3. mtm15n35 mtm15n40.pdf Size:58K _update-mosfet

15N40



1.4. wvm15n40.pdf Size:23K _update_mosfet

15N40

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N40(IRF350) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 1.5. mtm15n40e.pdf Size:174K _motorola

15N40
15N40

1.6. mth13n45 mth13n50 mth15n35 mth15n40.pdf Size:729K _motorola

15N40
15N40

1.7. fdp15n40 fdpf15n40.pdf Size:250K _fairchild_semi

15N40
15N40

October 2008 UniFETTM FDP15N40 / FDPF15N40 tm N-Channel MOSFET 400V, 15A, 0.3Ω Features Description • RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 28nC) stripe, DMOS technology. • Low Crss ( Typ. 17pF) This advanced technology has

1.8. mtm15n35 mtm15n40.pdf Size:58K _njs

15N40



1.9. mgp15n40cl mgb15n40cl.pdf Size:91K _onsemi

15N40
15N40

MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features 15 AMPERES monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses 410 VOLTS (Clamped) include Ignition, Direct Fuel Injec

1.10. 15n40.pdf Size:214K _utc

15N40
15N40

UNISONIC TECHNOLOGIES CO., LTD 15N40 Preliminary Power MOSFET 15A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high ene

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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