10N30 Datasheet. Equivalente

 ..1. Size:152K  utc
 10n30.pdf

UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand

 0.1. Size:201K  vishay
 sqd10n30-330h.pdf

SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 300 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.330 AEC-Q101 qualified d ID (A) 10 100 % Rg tested Configuration Single Material categorization for definitions of compliance please see D

 0.2. Size:1804K  infineon
 ipp410n30n.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPP410N30N TO-220-3 1 Description tab Features N-channel, normal level Fast Diode with reduced Q rr Optimized for hard commutation ruggedness Very low on-resi

 0.3. Size:157K  ixys
 ixbh10n300.pdf

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBH10N300 BIMOSFETTM Monolithic IC110 = 10A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30

 0.4. Size:131K  ixys
 ixfn210n30p3.pdf

 0.5. Size:271K  ixys
 ixba10n300hv.pdf

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor VCE(sat) 2.8V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V

 0.6. Size:224K  ixys
 ixgh10n300.pdf

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A VCE(sat) 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G (TAB) VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C 18 A G = Gate C

 0.7. Size:148K  ixys
 ixfl210n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFL210N30P3 Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to

 0.8. Size:228K  ixys
 ixbf10n300c.pdf

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transi

 0.9. Size:181K  ixys
 mmix1f210n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V Isolated Tab VDGR TJ

 0.10. Size:140K  ixys
 ixfb210n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFB210N30P3 Power MOSFET ID25 = 210A RDS(on) 14.5m trr 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C, RGS = 1M 300 V D

 0.11. Size:271K  ixys
 ixbh10n300hv.pdf

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor VCE(sat) 2.8V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V

 0.12. Size:104K  secos
 sid10n30-600i.pdf

SID10N30-600I 7.5A, 300V, RDS(ON) 600 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TO-251P The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES L

 0.13. Size:70K  analog power
 am10n30-600i.pdf

Analog Power AM10N30-600I N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (m ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5 converters and power management in portable and 300 900 @ VGS = 5.5V 6.1

 0.14. Size:244K  inchange semiconductor
 ipp410n30n.pdf

isc N-Channel MOSFET Transistor IPP410N30N IIPP410N30N FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for hard commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET