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10N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 10N30

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 135 W

Tensión drenaje-fuente (Vds): 300 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 89 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: TO-220, TO-251, TO-252

Búsqueda de reemplazo de MOSFET 10N30

 

10N30 Datasheet (PDF)

1.1. am10n30-600i.pdf Size:70K _upd-mosfet

10N30
10N30

Analog Power AM10N30-600I N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (mΩ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5 converters and power management in portable and 300 900 @ VGS = 5.5V 6.1

1.2. sqd10n30-330h.pdf Size:201K _update

10N30
10N30

SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 300 • Package with low thermal resistance RDS(on) (Ω) at VGS = 10 V 0.330 • AEC-Q101 qualified d ID (A) 10 • 100 % Rg tested Configuration Single • Material categorization: for definitions of compliance please see D

 1.3. mmix1f210n30p3.pdf Size:181K _update_mosfet

10N30
10N30

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V Isolated Tab VDGR TJ

1.4. ixbh10n300hv.pdf Size:271K _igbt

10N30
10N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor  VCE(sat)   2.8V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V

 1.5. ixbh10n300.pdf Size:157K _igbt

10N30
10N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBH10N300 BIMOSFETTM Monolithic IC110 = 10A Bipolar MOS Transistor  VCE(sat)   3.2V   TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V E VGES Continuous ± 20 V G = Gate C = Collector VGEM Transient ± 30

1.6. ixba10n300hv.pdf Size:271K _igbt

10N30
10N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor  VCE(sat)   2.8V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V

1.7. ixgh10n300.pdf Size:224K _igbt

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10N30

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A ≤ ≤ VCE(sat) ≤ 3.5V ≤ ≤ For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V G (TAB) VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C 18 A G = Gate C

1.8. ixbf10n300c.pdf Size:228K _igbt

10N30
10N30

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic  VCE(sat)   6.0V   Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V 1 2 VGEM Transi

1.9. sqd10n30-330h.pdf Size:201K _vishay

10N30
10N30

SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 300 • Package with low thermal resistance RDS(on) (Ω) at VGS = 10 V 0.330 • AEC-Q101 qualified d ID (A) 10 • 100 % Rg tested Configuration Single • Material categorization: for definitions of compliance please see D

1.10. ipp410n30n.pdf Size:1804K _infineon

10N30
10N30

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPP410N30N TO-220-3 1 Description tab Features • N-channel, normal level • Fast Diode with reduced Q rr • Optimized for hard commutation ruggedness • Very low on-resi

1.11. ixbh10n300hv.pdf Size:271K _ixys

10N30
10N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor  VCE(sat)   2.8V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V

1.12. ixfn210n30p3.pdf Size:131K _ixys

10N30
10N30

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFN210N30P3 Power MOSFET ID25 = 192A ≤ Ω RDS(on) ≤ 14.5mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1M

1.13. ixfl210n30p3.pdf Size:148K _ixys

10N30
10N30

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFL210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V G VDGR TJ = 25°C to

1.14. ixbh10n300.pdf Size:157K _ixys

10N30
10N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBH10N300 BIMOSFETTM Monolithic IC110 = 10A Bipolar MOS Transistor  VCE(sat)   3.2V   TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V E VGES Continuous ± 20 V G = Gate C = Collector VGEM Transient ± 30

1.15. ixba10n300hv.pdf Size:271K _ixys

10N30
10N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor  VCE(sat)   2.8V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V

1.16. ixfb210n30p3.pdf Size:140K _ixys

10N30
10N30

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFB210N30P3 Power MOSFET ID25 = 210A ≤ Ω RDS(on) ≤ 14.5mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V G VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V D

1.17. ixgh10n300.pdf Size:224K _ixys

10N30
10N30

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A ≤ ≤ VCE(sat) ≤ 3.5V ≤ ≤ For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V G (TAB) VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C 18 A G = Gate C

1.18. ixbf10n300c.pdf Size:228K _ixys

10N30
10N30

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic  VCE(sat)   6.0V   Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V 1 2 VGEM Transi

1.19. mmix1f210n30p3.pdf Size:181K _ixys

10N30
10N30

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V Isolated Tab VDGR TJ

1.20. 10n30.pdf Size:152K _utc

10N30
10N30

UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand

1.21. sid10n30-600i.pdf Size:104K _secos

10N30
10N30

SID10N30-600I 7.5A, 300V, RDS(ON) 600 mΩ Ω Ω Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-251P The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES L

1.22. ipp410n30n.pdf Size:244K _inchange_semiconductor

10N30
10N30

isc N-Channel MOSFET Transistor IPP410N30N,IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for hard commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMET

1.23. am10n30-600i.pdf Size:70K _analog_power

10N30
10N30

Analog Power AM10N30-600I N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (mΩ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5 converters and power management in portable and 300 900 @ VGS = 5.5V 6.1

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