2N7000Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2N7000Z Datasheet (PDF)

1.1. 2n7000z.pdf Size:150K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is part

4.1. tsm2n7000kct.pdf Size:181K _update_mosfet

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(Ω) ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ● Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

4.2. 2n7000r3.pdf Size:77K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N�Channel � Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29�04, STYLE 22 Drain�Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO�92 (TO�226AA) Gate�Source Voltage � Continuous VGS �20 Vd

 4.3. 2n7000-03.pdf Size:274K _philips

2N7000 N-channel enhancement mode field-effect transistor Rev. 03 � 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS�1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS� technology Very fast switching Logic level compatible. 3. Applications Relay driver

4.4. 2n7000 2n7002.pdf Size:626K _st

2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET� Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 � Low Qg � Low threshold drive SOT23-3L TO-92 Application � Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectron

 4.5. 2n7000bu.pdf Size:85K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous

4.6. 2n7000ta.pdf Size:84K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Contin

4.7. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and

4.8. 2n7000.pdf Size:94K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and

4.9. 2n7000.pdf Size:443K _samsung

N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Curren

4.10. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Lo

4.11. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY � TrenchFET� Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free � ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 � Direct Logic-Level Interface: TTL/CMOS � Solid-State Relays � Drivers: Relays, Solenoids, Lam

4.12. 2n7000g.pdf Size:92K _onsemi

2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com � AEC Qualified 200 mAMPS � PPAP Capable 60 VOLTS � This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS � 20 Vdc S - Non-repetiti

4.13. 2n7000.pdf Size:355K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low volta

4.14. 2n7000k.pdf Size:201K _auk

2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packag

4.15. 2n7000.pdf Size:358K _secos

2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A

4.16. tsm2n7000.pdf Size:85K _taiwansemi

4.17. 2n7000.pdf Size:63K _kec

2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RA

4.18. 2n7000k.pdf Size:67K _kec

2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H

4.19. 2n7000a.pdf Size:61K _kec

2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85

4.20. 2n7000.pdf Size:239K _lge

2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 2

4.21. 2n7000.pdf Size:168K _wietron

WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source

4.22. h2n7000.pdf Size:51K _hsmc

Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Tempera

4.23. st2n7000.pdf Size:566K _semtech

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 MΩ) VDGR 60 V Gate-source Voltage Continuous VGS ± 20 V VGSM ± 40 V Non-repetitive ( tp ≤ 50 μs) Drain Current Continuous

4.24. h2n7000.pdf Size:423K _shantou-huashan

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

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