2N7002Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002Z  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT-23-3 TO-236

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2N7002Z datasheet

 ..1. Size:178K  utc
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2N7002Z

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 0.1. Size:159K  utc
 2n7002zt.pdf pdf_icon

2N7002Z

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

 0.2. Size:172K  utc
 2n7002zdwg-al6-r.pdf pdf_icon

2N7002Z

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance

 0.3. Size:171K  utc
 2n7002zdw.pdf pdf_icon

2N7002Z

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CR

MOSTRAR MÁS

Otros transistores... 15N25, 18N25, UF2N30, 10N30, 12N30, UF3205, 2N7000Z, 2N7002LL, 2N60, 2N7002ZT, UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10, 15N20