12N06 Todos los transistores

 ..1. Size:189K  utc
 12n06.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N06 Preliminary Power MOSFET 12 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UT12N06 is an N-channel mode Power MOSFET using TO-252 UTC s advanced technology to provide customers with minimum on-state resistance with extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps . FEAT

 0.1. Size:170K  1
 std12n05l-1 std12n05lt4 std12n06l-1 std12n06lt4.pdf

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V

 0.2. Size:172K  1
 std12n05-1 std12n05t4 std12n06-1 std12n06t4.pdf

STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05 50 V

 0.3. Size:276K  motorola
 mtd12n06e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's Data Sheet MTD12N06EZL TMOS E-FET. High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode

 0.4. Size:222K  motorola
 mtp12n06ez.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's Data Sheet MTP12N06EZL TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a g

 0.5. Size:194K  motorola
 mtp12n06ezl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's Data Sheet MTP12N06EZL TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a g

 0.6. Size:262K  philips
 phb112n06t php112n06t.pdf

PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features Fast switching Very low on-state resistan

 0.7. Size:215K  fairchild semi
 rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate

 0.8. Size:1180K  infineon
 bsc112n06ld.pdf

BSC112N06LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Superior Thermal Resistance Halogen-free according to IEC61249-2-21 Product Va

 0.9. Size:836K  infineon
 bsc012n06ns.pdf

BSC012N06NS MOSFET TSON-8-3 OptiMOSTM5 Power-Transistor, 60 V 8 7 5 6 6 Features 7 5 8 Optimized for synchronous rectification Pin 1 100% avalanche tested 2 4 3 3 Superior thermal resistance 4 2 1 N-channel 175 C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enla

 0.10. Size:634K  infineon
 ipt012n06n.pdf

IPT012N06N MOSFET HSOF OptiMOSTM Power-Transistor, 60 V Features Tab 100% avalanche tested Superior thermal resistance N-channel 1 Qualified according to JEDEC1) for target applications 2 3 4 5 Pb-free lead plating; RoHS compliant 6 7 8 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applica

 0.11. Size:863K  onsemi
 rfd12n06rlesm.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.12. Size:189K  utc
 12n06z.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N06Z Power MOSFET 12A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 12N06Z is an N-channel enhancement mode Power TO-252 MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. FEATURES * 12A, 60V, RDS(on)

 0.13. Size:864K  goford
 gt12n06s.pdf

GOFORD GT12N06S N-Channel Enhancement Mode Power MOSFET Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 60V ID (at VGS = 10V) 12A RDS(ON) (at VGS = 10V)

 0.14. Size:672K  cn wxdh
 d12n06.pdf

D12N06 12A 60V N-channel Enhancement Mode Power MOSFET 1 Description D12N06 is an N-channel enhancement mode power 2 D V = 60V field-effect transistor. Using advanced trench technology DSS design, providing excellent Rdson and low gate charge.The R = 56m DS(on) (TYP) G product can be used in a wide variety of application.The 1 package form is TO-252. Which accords with the RoHS

 0.15. Size:101K  sirectifier
 sg12n06dt.pdf

SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

 0.16. Size:191K  sirectifier
 sg12n06p.pdf

SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

 0.17. Size:101K  sirectifier
 sg12n06t.pdf

SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

 0.18. Size:191K  sirectifier
 sg12n06dp.pdf

SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

 0.19. Size:1653K  wuxi china
 cs12n06ae-g.pdf

Silicon N-Channel Power Trench MOSFET R CS12N06 AE-G General Description VDSS 60 V CS12N06 AE-G, the silicon N-channel Enhanced ID Silicon limited current 12 A PD(TC=25 ) 3.2 W VDMOSFETs, is obtained by the high density Trenchtechnology RDS(ON)Typ 10.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The

 0.20. Size:1173K  cn vanguard
 vso012n06ms.pdf

VSO012N06MS 60V/13A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 9.5 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 11.5 m Enhancement mode I D 13 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching SOP8 Pb-free lead plating; RoHS compliant MSL Level 1 compliant Tape and reel Part ID

 0.21. Size:315K  cn vanguard
 vst012n06ms.pdf

VST012N06MS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 8.4 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 9.8 m Enhancement mode I D 55 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Pac

 0.22. Size:1633K  cn vbsemi
 vbze12n06.pdf

VBZE12N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.095at VGS = 10 V 16 Material categorization 60 19.8 For definitions of compliance please see 0.110 at VGS = 4.5 V 13 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor Dr

 0.23. Size:835K  cn vbsemi
 rfd12n06rles.pdf

RFD12N06RLES www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.24. Size:1088K  cn vbsemi
 vbzj12n06.pdf

VBZJ12N06 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

 0.25. Size:481K  cn wuxi unigroup
 tsg12n06at.pdf

TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)

 0.26. Size:473K  cn wuxi unigroup
 tsd12n06at.pdf

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa

 0.27. Size:1654K  cn apm
 ap12n06s.pdf

AP12N06S 60V N-Channel Enhancement Mode MOSFET Description The AP12N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12A DS D R