25N10 Todos los transistores

 

25N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 25N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 28 nS

Conductancia de drenaje-sustrato (Cd): 270 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TO-220F2_TO-251_TO-252_TO-220F_TO-220F1

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25N10 Datasheet (PDF)

1.1. stf25n10f7.pdf Size:1281K _update

25N10
25N10

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 Ω 25 A 40 W STF25N10F7 100 V 0.035 Ω 19 A 25 W TAB STP25N10F7 100 V 0.035 Ω 25 A 50 W 1. @ VGS = 10 V 3 3 •

1.2. st25n10.pdf Size:1173K _upd

25N10
25N10

 ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

 1.3. std25n10f7.pdf Size:1281K _upd

25N10
25N10

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 Ω 25 A 40 W STF25N10F7 100 V 0.035 Ω 19 A 25 W TAB STP25N10F7 100 V 0.035 Ω 25 A 50 W 1. @ VGS = 10 V 3 3 •

1.4. hy125n10t.pdf Size:222K _upd-mosfet

25N10
25N10

 SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 – MAXIMUM NON- T1 – FORWARD CURRENT AMBIENT TEMPERATURE (℃) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY125N10T 100V / 125A 100V, RDS(ON)=5.8mW@VGS=10V, ID=40A N-Channel Enhancement Mode MOSFET Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product

 1.5. stp25n10f7.pdf Size:1281K _upd-mosfet

25N10
25N10

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 Ω 25 A 40 W STF25N10F7 100 V 0.035 Ω 19 A 25 W TAB STP25N10F7 100 V 0.035 Ω 25 A 50 W 1. @ VGS = 10 V 3 3 •

1.6. ipb025n10n3g rev2.03.pdf Size:665K _infineon

25N10
25N10

IPB025N10N3 G 3 Power-Transistor Product Summary Features V 1 D P ' 381>>5< >?A=1< <5E5< R m D n) m x P G35<<5>C 71C5 381A75 G R @A?4D3C ( & D n) I 1 D P GCA5=5 A5B9BC1>35 R D n) P "978 3DAA5>C 31@129<9CH P S ?@5A1C9>7 C5=@5A1CDA5 P )2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?> P "1 6A55 133?A49>7 C? # Type #

1.7. 25n10.pdf Size:227K _utc

25N10
25N10

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET ? DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications

1.8. ixgm25n100a.pdf Size:76K _igbt

25N10
25N10

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C50 A IC90 TC = 90°C25 A TO-204 AE (IXGM) ICM TC = 25°C, 1 m

1.9. ixgh25n100au1.pdf Size:227K _igbt

25N10
25N10

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V G C E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G = Gate C = Collector VGEM Transient ±30 V E = Emitter TAB = Collector I

1.10. ixgh25n100u1.pdf Size:227K _igbt

25N10
25N10

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V G C E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G = Gate C = Collector VGEM Transient ±30 V E = Emitter TAB = Collector I

1.11. ixgh25n100a.pdf Size:76K _igbt

25N10
25N10

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C50 A IC90 TC = 90°C25 A TO-204 AE (IXGM) ICM TC = 25°C, 1 m

1.12. ixgh25n100.pdf Size:76K _igbt

25N10
25N10

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C50 A IC90 TC = 90°C25 A TO-204 AE (IXGM) ICM TC = 25°C, 1 m

1.13. ap25n10gp-hf.pdf Size:100K _a-power

25N10
25N10

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS 100V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching Characteristic ID 23A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D

1.14. ap25n10gh-hf.pdf Size:100K _a-power

25N10
25N10

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 100V Ў Single Drive Requirement RDS(ON) 80m? Ў RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, low o

1.15. ap25n10gh.pdf Size:238K _a-power

25N10
25N10

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 100V ▼ Single Drive Requirement RDS(ON) 80mΩ ▼ RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S

1.16. ap25n10gs-hf.pdf Size:100K _a-power

25N10
25N10

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS 100V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching Characteristic ID 23A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D

1.17. ap25n10gj-hf.pdf Size:100K _a-power

25N10
25N10

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 100V Ў Single Drive Requirement RDS(ON) 80m? Ў RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, low o

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