30N06 Todos los transistores

 ..1. Size:331K  utc
 30n06.pdf

UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2 TO-220F1 characteristics. This power MOSFET is usually used

 ..2. Size:1795K  umw-ic
 30n06.pdf

R UMW UMW 30N06 UMW 30N06 UMW 30N06 1. The 30N06 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.The 30N06 meet the RoHS and Green Product requirenment,100%EAS guaranteed with full function reliability approved. 2. RDS(on)=25m @ VDS=60V Avanced high

 ..3. Size:281K  inchange semiconductor
 30n06.pdf

isc N-Channel MOSFET Transistor 30N06 FEATURES Static drain-source on-resistance RDS(on) 0.05 Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 0.1. Size:920K  1
 mcac30n06y-tp.pdf

MCAC30N06Y Electrical Characteristics @ 25 C (Unless OtherwiseSpecified) Parameter Symbol Test conditions Min Typ Max Unit Static Parameter V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V VGS(th) VDS=VGS, ID=250 A 1.0 1.5 2.5 V Gate-Threshold Voltage(Note 3) IGSS Gate-Body Leakage VDS=0V, VGS= 20V 100 nA IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current 1 A

 0.2. Size:823K  1
 hy030n06c2.pdf

HY030N06C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/100A D D D D D D D D RDS(ON)= 2.4 m (typ.)@VGS = 10V RDS(ON)= 3.7 m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati

 0.3. Size:207K  motorola
 mtp30n06vl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP30N06VL/D Designer's Data Sheet MTP30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 30 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 0.4. Size:262K  motorola
 mtb30n06vlrev4.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

 0.5. Size:227K  motorola
 mtb30n06vl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

 0.6. Size:370K  st
 stp30n06.pdf

STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP30N06 60 V

 0.7. Size:495K  fairchild semi
 fdi030n06.pdf

June 2009 FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performan

 0.8. Size:734K  fairchild semi
 fqd30n06tf fqd30n06tm.pdf

January 2009 QFET FQD30N06 / FQU30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 22.7A, 60V, RDS(on) = 0.045 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especial

 0.9. Size:1628K  fairchild semi
 fqb30n06l fqi30n06l.pdf

October 2008 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 0.10. Size:482K  fairchild semi
 fdp030n06.pdf

June 2009 FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 0.11. Size:623K  fairchild semi
 fqp30n06l.pdf

May 2001 TM QFET FQP30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailo

 0.12. Size:1403K  fairchild semi
 fdms030n06b.pdf

November 2013 FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 m Features Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance wh

 0.13. Size:188K  fairchild semi
 rfp30n06le rf1s30n06lesm.pdf

RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

 0.14. Size:661K  fairchild semi
 fqb30n06tm.pdf

May 2001 TM QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially ta

 0.15. Size:643K  fairchild semi
 fqpf30n06.pdf

May 2001 TM QFET FQPF30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially tailored to

 0.16. Size:660K  fairchild semi
 fqp30n06.pdf

TM QFET FQP30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially tailored to Fast s

 0.17. Size:653K  fairchild semi
 fqpf30n06l.pdf

May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 22.5A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially ta

 0.18. Size:734K  fairchild semi
 fqd30n06ltf fqd30n06ltm fqu30n06ltu.pdf

January 2009 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 0.19. Size:1034K  fairchild semi
 fqb30n06ltm.pdf

October 2008 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 0.20. Size:641K  fairchild semi
 fdp030n06b f102.pdf

November 2013 FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 m Features Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching perfor

 0.21. Size:734K  fairchild semi
 fqd30n06l fqu30n06l.pdf

January 2009 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es

 0.22. Size:217K  rohm
 rsr030n06.pdf

4V Drive Nch MOSFET RSR030N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. ( ) ( ) 1 2 2) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 Abbreviated symbol PY Application Inner circuit (3) Switching Packaging specifications 2 Package Taping (1) Type Code TL

 0.23. Size:600K  rohm
 rsr030n06tl.pdf

RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS TSMT3 60V (3) RDS(on) (Max.) 85mW ID (1) 3A PD 1W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifica

 0.24. Size:148K  infineon
 ipd30n06s2l-13.pdf

IPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 13 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Markin

 0.25. Size:1008K  infineon
 ipd230n06ng.pdf

$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features V 60 V DS O >@ 32 32 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 2 mW DS(on) max O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?4285843 j Parameter Sym

 0.26. Size:1005K  infineon
 ipd230n06lg.pdf

% # ! % (>.;?6?@ %>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> mW D n) m x P ( 381>>581>35=5>C

 0.27. Size:149K  infineon
 ipd30n06s2-15.pdf

IPD30N06S2-15 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.7 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N06

 0.28. Size:148K  infineon
 ipd30n06s2l-23.pdf

IPD30N06S2L-23 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 23 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Markin

 0.29. Size:162K  infineon
 ipd30n06s4l-23 ipd30n06s4l-23 ds 10.pdf

IPD30N06S4L-23 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 23 m DS(on),max I 30 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N06S4L-23 PG-TO252-3-11 4N06L23 Maximum rat

 0.30. Size:149K  infineon
 ipd30n06s2-23.pdf

IPD30N06S2-23 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 23 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N06S2

 0.31. Size:679K  infineon
 ipp230n06l3 ipb230n06l3.pdf

pe IPB230N06L3 G IPP230N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 R m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D R "2

 0.32. Size:920K  mcc
 mcac30n06y.pdf

MCAC30N06Y Electrical Characteristics @ 25 C (Unless OtherwiseSpecified) Parameter Symbol Test conditions Min Typ Max Unit Static Parameter V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V VGS(th) VDS=VGS, ID=250 A 1.0 1.5 2.5 V Gate-Threshold Voltage(Note 3) IGSS Gate-Body Leakage VDS=0V, VGS= 20V 100 nA IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current 1 A

 0.33. Size:673K  onsemi
 fdi030n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.34. Size:911K  onsemi
 fdp030n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.35. Size:227K  onsemi
 nvmfd030n06c.pdf

MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 mW, 19 A NVMFD030N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 29.7 mW @ 10 V 19 A AEC-Q

 0.36. Size:75K  onsemi
 ntb30n06l ntp30n06l ntp30n06l ntb30n06l.pdf

 0.37. Size:199K  onsemi
 nttfs030n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 29.7 mW, 19 A NTTFS030N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 29.7 mW @ 10 V 19 A Typica

 0.38. Size:78K  onsemi
 ntb30n06g ntp30n06 ntp30n06 ntb30n06.pdf

NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 30 AMPERES, 60 VOLTS Features RDS(on) = 42 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters G

 0.39. Size:1357K  onsemi
 fqd30n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.40. Size:1221K  onsemi
 fqb30n06l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.41. Size:269K  onsemi
 nvtfs030n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 29.7 mW, 19 A NVTFS030N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS030N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 29.7 mW @ 10 V 19 A AEC-

 0.42. Size:748K  onsemi
 fdp030n06b f102.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.43. Size:225K  onsemi
 ntmfd030n06c.pdf

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 mW, 19 A NTMFD030N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 29.7 mW @ 10 V 19 A Typical

 0.44. Size:331K  utc
 30n06l-tm3-t 30n06g-tm3-t 30n06l-tn3-t 30n06g-tn3-t 30n06l-tn3-r 30n06g-tn3-r 30n06g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2 TO-220F1 characteristics. This power MOSFET is usually used

 0.45. Size:331K  utc
 30n06l-ta3-t 30n06g-ta3-t 30n06l-tf1-t 30n06g-tf1-t 30n06l-tf2-t 30n06g-tf2-t 30n06l-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 1 1 designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2 TO-220F1 characteristics. This power MOSFET is usually used

 0.46. Size:297K  utc
 utt30n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotive applications of power suppl

 0.47. Size:64K  harris semi
 rf1s30n06le.pdf

RFP30N06LE, RF1S30N06LE, S E M I C O N D U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB 30A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra

 0.48. Size:387K  secos
 ssd30n06-39d.pdf

SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

 0.49. Size:203K  analog power
 am30n06-39ie.pdf

Analog Power AM30N06-39IE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batt

 0.50. Size:291K  analog power
 am30n06-65da.pdf

Analog Power AM30N06-65DA N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 65 @ VGS = 10V 23 Low thermal impedance 60 78 @ VGS = 4.5V 21 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 0.51. Size:175K  analog power
 am30n06-39d.pdf

Analog Power AM30N06-39D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batte

 0.52. Size:1221K  jilin sino
 jt030n065f7pd1e.pdf

IGBT IGBT Modules R IGBT JT030N065F7PD1E MAIN CHARACTERISTICS Package IC 30A 650V V CES Vcesat_typ 1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology

 0.53. Size:1641K  jilin sino
 tt030n065ei.pdf

 0.54. Size:1594K  jilin sino
 jt030n065wed jt030n065fed jt030n065sed.pdf

N N-CHANNEL IGBT R JT030N065WED/FED/SED MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.75V VCE SAT-TYP APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench F

 0.55. Size:1789K  jilin sino
 jt030n065aed.pdf

N N-CHANNEL IGBT R JT030N065AED MAIN CHARACTERISTICS Package I 30A C V 650V CES V -TYP 1.5V CE sat APPLICATIONS General purpose inverters UPS UPS E FEATURES C G Low gate charge TO-3PH Trench FS Trench

 0.56. Size:1243K  jilin sino
 jt030n065f6md1e.pdf

IGBT IGBT Modules R IGBT JT030N065F6MD1E MAIN CHARACTERISTICS Package IC 30A 650V V CES Vcesat_typ 1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology

 0.57. Size:1550K  jilin sino
 att030n065eq.pdf

 0.58. Size:324K  cystek
 mtb30n06v8.pdf

Spec. No. C699V8 Issued Date 2012.03.20 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB30N06V8 ID 6.8A VGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline

 0.59. Size:281K  cystek
 mtb30n06j3.pdf

Spec. No. C699J3 Issued Date 2012.05.16 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB30N06J3 ID 22A RDS(ON)@VGS=10V, ID=18A 27m (typ) RDS(ON)@VGS=4.5V, ID=10A 31m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli

 0.60. Size:305K  cystek
 mtb30n06q8.pdf

Spec. No. C699Q8 Issued Date 2013.04.15 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB30N06Q8 ID 8A 25m VGS=10V, ID=6.8A RDSON(TYP) 28m VGS=4.5V, ID=4A Description The MTB30N06Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi

 0.61. Size:1057K  blue-rocket-elect
 brcs030n06sbd.pdf

 0.62. Size:1328K  blue-rocket-elect
 brcs030n06szc.pdf

BRCS030N06SZC Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON) resistan

 0.63. Size:222K  shantou-huashan
 hfp30n06.pdf

HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche ch

 0.64. Size:929K  cn wxdh
 dhs130n06b dhs130n06d.pdf

DHS130N06B&DHS130N06D 120A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.9m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Low on resistance Low gate charg

 0.65. Size:1194K  bruckewell
 msd30n06.pdf

Bruckewell Technology Corp., Ltd. MSD30N06 N-Channel 60-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Notes a. Surface Mount

 0.66. Size:823K  hymexa
 hy030n06c2.pdf

HY030N06C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/100A D D D D D D D D RDS(ON)= 2.4 m (typ.)@VGS = 10V RDS(ON)= 3.7 m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati

 0.67. Size:124K  kia
 kia30n06b.pdf

25A 60V 30N06B N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA30N06B is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.The KIA30N06Bmeet the RoHSand Green Product requirenment,100%EAS guaranteed with full

 0.68. Size:920K  oriental semi
 sfs130n06gf.pdf

 0.69. Size:400K  samwin
 sw30n06 swp40n10 swi40n10 swd30n06.pdf

SAMWIN SW30N06 N-channel MOSFET TO-220 TO-251 TO-252 Features BVDSS 60V ID 30A High ruggedness RDS(ON) (Max 0.036 )@VGS=10V RDS(ON) 0.036 ohm Gate Charge (Typ 20nC) 1 2 1 Improved dv/dt Capability 2 1 3 2 3 100% Avalanche Tested 3 2 1. Gate 2. Drain 3. Source 1 General Description These N-channel enhancement mode power field effect transistors

 0.70. Size:600K  sanrise-tech
 sre30n065fssdg.pdf

Preliminary Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSSDG General Description Symbol The SRE30N065FSSDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSSDG is available in TO-263 and TO-247

 0.71. Size:651K  sanrise-tech
 sre30n065fssdf.pdf

Preliminary Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSSDF General Description Symbol The SRE30N065FSSDF is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSSDF is available in TO-263 and TO-247

 0.72. Size:1240K  sanrise-tech
 sre30n065fsudf.pdf

Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSUDF General Description Symbol The SRE30N065FSUDF is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSUDF is available in TO-247 TO-263 and TO-220

 0.73. Size:1151K  sanrise-tech
 sre30n065fsudg.pdf

Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSUDG General Description Symbol The SRE30N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSUDG is available in TO- 220C TO-263 and TO-247

 0.74. Size:960K  semihow
 hrp130n06k.pdf

December 2014 BVDSS = 60 V RDS(on) typ =10.5m HRP130N06K ID = 70 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 10.5 m (Typ.

 0.75. Size:155K  semihow
 hrs130n06k.pdf

December 2014 BVDSS = 60 V RDS(on) typ =10.5 HRS130N06K ID = 70 A 60V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 10.5 (Typ.) @VGS=10V 100% Avalanche Tes

 0.76. Size:185K  semihow
 hrf130n06k.pdf

Jan 2016 HRF130N06K 60V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 60 V ID = 48 A 1 Unrivalled Gate Charge 42 nC (Typ.) Lower RDS(ON) 10.5 (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage 25 V TC = 25 48 A ID Drain Current TC

 0.77. Size:1591K  slkor
 sl30n06d.pdf

SL30N06D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and SL30N06D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

 0.78. Size:634K  way-on
 wmk030n06lg4.pdf

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18

 0.79. Size:630K  way-on
 wmo030n06lg4.pdf

WMO030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 60V, I = 130A

 0.80. Size:479K  way-on
 wmq30n06ts.pdf

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S maintain superior switching performance. G S PDFN3030-8L Features V = 60V, I = 30A DS D R

 0.81. Size:970K  way-on
 wml030n06hg4.pdf

WML030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WML030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDS is well suited for high efficiency fast switching applications. TO-220F Features V = 60V, I = 78A

 0.82. Size:693K  way-on
 wmm030n06hg4.pdf

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G S is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 18

 0.83. Size:655K  way-on
 wmo030n06hg4.pdf

WMO030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. TO-252 Features V = 60V, I = 13

 0.84. Size:651K  way-on
 wmk030n06hg4.pdf

WMK030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18

 0.85. Size:2179K  haolin elec
 hd30n06 hu30n06.pdf

Nov 2019 BVDSS = 60 V RDS(on) = 32 m HD30N06 / HU30N06 ID = 30 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N06 HU30N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Exte

 0.86. Size:1290K  jiejie micro
 jmtp330n06d.pdf

60V, 5A, 32m N-channel Power Trench MOSFET JMTP330N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V Halogen-free; RoHS-compliant VGS(th)_Typ 1.6 V Pb-free plating ID(@VGS=10V) 5 A RDS(ON)_Typ(@VGS=10V 28 mW Applications RDS(ON)_Typ(@VGS=4.5V 32 mW Load Switch PWM Application Power Ma

 0.87. Size:1279K  jiejie micro
 jmtm330n06a.pdf

60V, 4.8A, 35m N-channel Power Trench MOSFET JMTM330N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS 60 V Pb-free plating VGS(th)_Typ 1.6 V ID(@VGS=10V) 4.8 A Applications RDS(ON)_Typ(@VGS=10V 31 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 35 mW PWM Application Power Management SOT-23-

 0.88. Size:1212K  jiejie micro
 jmtn330n06a.pdf

60V, 17A, 32m N-channel Power Trench MOSFET JMTN330N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 17 A RDS(ON)_Typ(@VGS=10V 28 mW Applications RDS(ON)_Typ(@VGS=4.5V 32 mW Load Switch PWM Application Powe

 0.89. Size:1254K  jiejie micro
 jmtk330n06a.pdf

60V, 20A, 32m N-channel Power Trench MOSFET JMTK330N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 20 A Applications RDS(ON)_Typ(@VGS=10V 26 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 32 mW PWM Application Powe

 0.90. Size:764K  cn hunteck
 hgk030n06s.pdf

HGK030N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 190 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switc

 0.91. Size:770K  cn vbsemi
 30n06l.pdf

30N06L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

 0.92. Size:1135K  cn vbsemi
 fqp30n06l.pdf

FQP30N06L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 0.93. Size:1134K  cn vbsemi
 30n06-to220.pdf

30N06 TO220 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

 0.94. Size:1075K  cn vbsemi
 vbzl30n06.pdf

VBZL30N06 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 100 V 175 C Maximum Junction Temperature RDS(on) VGS = 10 V 10 m Compliant to RoHS Directive 2002/95/EC 23 RDS(on) VGS = 4.5 V m ID 100 A Configuration Single D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle

 0.95. Size:961K  cn vbsemi
 vbzfb30n06.pdf

VBZFB30N06 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.009 ID (A) 70 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25

 0.96. Size:2059K  cn vbsemi
 vbze30n06.pdf

VBZE30N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 22 0.073at VGS = 10 V Material categorization 60 19.8 For definitions of compliance please see 0.097 at VGS = 4.5 V 16 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor D

 0.97. Size:774K  cn vbsemi
 fqd30n06.pdf

FQD30N06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 0.98. Size:770K  cn vbsemi
 30n06-to252.pdf

30N06 TO252 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 0.99. Size:1656K  cn vbsemi
 vbzm30n06.pdf

VBZM30N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Surface Mount 0.024 at VGS = 10 V 50 Available in Tape and Reel 60 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Directive 2002/95/EC

 0.100. Size:1144K  cn vbsemi
 rfp30n06le.pdf

RFP30N06LE www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

 0.101. Size:1346K  cn vbsemi
 am30n06-39d.pdf

AM30N06-39D www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 0.102. Size:1132K  cn yangzhou yangjie elec
 yjg30n06a.pdf

RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GS General Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters

 0.103. Size:13779K  cn scilicon
 skt030n065.pdf

SKT030N065 IGBT 650V, 30A,Vcesat 1.75V FEATURES Product Summary Low gate charge VDS 650V Trench FS Trench FS Technology Vcesattyp. 1.75V RoHS RoHS product ID 30A APPLICATIONS 100% DVDS Tested General purpose inverters 100% Avalanche Tested UPS UPS SKT030N065 Package Markin

 0.104. Size:14504K  cn scilicon
 skw030n065.pdf

SKW030N065 IGBT 650V, 30A,Vcesat 1.75V FEATURES Product Summary Low gate charge VDS 650V Trench FS Trench FS Technology Vcesattyp. 1.75V RoHS RoHS product ID 30A APPLICATIONS 100% DVDS Tested General purpose inverters 100% Avalanche Tested UPS UPS SKT030N065 Package Markin

 0.105. Size:962K  cn minos
 mdt30n06l.pdf

60V N-Channel Power MOSFET DESCRIPTION The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A RDS(ON)

 0.106. Size:2198K  cn minos
 mpg30n06p.pdf

 0.107. Size:255K  inchange semiconductor
 fdi030n06.pdf

isc N-Channel MOSFET Transistor FDI030N06 FEATURES Drain Current I = 136A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 0.108. Size:257K  inchange semiconductor
 fdp030n06.pdf

isc N-Channel MOSFET Transistor FDP030N06 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 0.109. Size:1427K  cn apm
 ap30n06df.pdf

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

 0.110. Size:1476K  cn apm
 ap30n06y.pdf

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

 0.111. Size:1645K  cn apm
 ap30n06p ap30n06t.pdf

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

 0.112. Size:1366K  cn apm
 apg130n06d.pdf

APG130N06D 60V N-SGT Enhancement Mode MOSFET General Description APG130N06D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unif

 0.113. Size:2025K  cn apm
 apg130n06p apg130n06t apg130n06f.pdf

 0.114. Size:1984K  cn apm
 apg130n06nf.pdf

APG130N06NF 60V N-SGT Enhancement Mode MOSFET General Description APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un

 0.115. Size:1207K  cn apm
 ap30n06d.pdf

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R