80N08 Todos los transistores

 ..1. Size:199K  utc
 80n08.pdf

UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL ORDERING INF

 0.1. Size:164K  1
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 0.2. Size:201K  infineon
 ipb180n08s4-02.pdf

IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08

 0.3. Size:228K  infineon
 ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

 0.4. Size:314K  infineon
 spp80n08s2l spb80n08s2l.pdf

SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.8 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N08S2L-07 P- TO220 -3-1 Q67060-S6015 2N08L07 SPB80N08S2L-

 0.5. Size:157K  infineon
 ipb80n08s2l-07 ipp80n08s2l-07.pdf

IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 0.6. Size:164K  infineon
 ipb80n08s2-07.pdf

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 0.7. Size:160K  infineon
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 0.8. Size:203K  ixys
 ixth180n085t ixtq180n085t.pdf

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-

 0.9. Size:57K  ixys
 ixfr180n085.pdf

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C

 0.10. Size:197K  ixys
 ixta180n085t7.pdf

Preliminary Technical Information VDSS = 85 V IXTA180N085T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25

 0.11. Size:46K  ixys
 ixfk180n085 ixfx180n085.pdf

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 1

 0.12. Size:525K  ixys
 ixfc80n08.pdf

ADVANCE TECHNICAL INFORMATION VDSS ID25 RDS(on) HiPerFETTM MOSFET IXFC 80N08 80 V 80 A 11 m ISOPLUS220TM 85 V 80 A 11 m IXFC 80N085 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings ISOPLUS220TM VDSS TJ = 25 C to 150 C 80N08 80 V VDGR TJ = 25 C to

 0.13. Size:54K  ixys
 ixfh80n085 ixft80n085.pdf

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C80 A IL

 0.14. Size:214K  ixys
 ixta180n085t ixtp180n085t.pdf

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 T

 0.15. Size:127K  utc
 utt80n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai

 0.16. Size:62K  taiwansemi
 tsm80n08cz.pdf

TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 75 8 @ VGS =10V 80 Features Block Diagram Advanced Trench Technology Low RDS(ON) 8m (Max.) Low gate charge typical @ 91.5nC (Typ.) Low Crss typical @ 203pF (Typ.) Ordering Information Part No. Package Packing

 0.17. Size:431K  kec
 kf80n08p f.pdf

KF80N08P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ FEATURES I + D 0.8 0.1 _ E 3.6 + 0.2 VDSS= 75V, I

 0.18. Size:1245K  jilin sino
 jcs80n08i.pdf

N R N-CHANNEL MOSFET JCS80N08I MAIN CHARACTERISTICS Package ID 80A VDSS 80V Rdson-max - 9m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap

 0.19. Size:310K  cystek
 mtb80n08j3.pdf

Spec. No. C909J3 Issued Date 2013.04.01 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 80V MTB80N08J3 ID 15A RDS(ON)@VGS=10V, ID=15A 59.6 m (typ) RDS(ON)@VGS=4.5V, ID=10A 60.5 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

 0.20. Size:841K  goford
 80n08tr.pdf

GOFORD 80N08TR N-Channel MOSFETS DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The OGFD 80N08TR is the N-Channel logicenhancementmodePowerfield effect transistors are produced using high cell density. Dmos trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitedforlowvoltageapplication suchascel

 0.21. Size:859K  blue-rocket-elect
 br80n08.pdf

BR80N08(BRCS80N08R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig

 0.22. Size:751K  blue-rocket-elect
 brb80n08.pdf

BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

 0.23. Size:734K  blue-rocket-elect
 brb80n08a.pdf

BRB80N08A Rev.C Jun.-2019 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi

 0.24. Size:1120K  blue-rocket-elect
 br80n08a.pdf

BR80N08A Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

 0.25. Size:561K  first silicon
 ftk80n08.pdf

SEMICONDUCTOR FTK80N08 TECHNICAL DATA N-CHANNEL MOSFET (75V/80A, Rds=10m ) Feathers TO-220 Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 Avalanche Energy 100% test 2 3 Description The FTK80N08 is a new generation of middle voltag

 0.26. Size:884K  cn wxdh
 dhd80n08.pdf

DHD80N08 90A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 90A 3 S D 2 Features Fast switching High avalanche current Low on resistanc

 0.27. Size:1310K  cn wxdh
 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf

DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features

 0.28. Size:946K  feihonltd
 fhs80n08b fhd80n08b.pdf

N N-CHANNEL MOSFET FHS80N08B/FHD80N08B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 80 V Crss ( 230pF) Low Crss (typical 230pF ) Rdson-typ @Vgs=10V 8m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp

 0.29. Size:277K  feihonltd
 fhp80n08a.pdf

 0.30. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 0.31. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 0.32. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 0.33. Size:947K  oriental semi
 sfg280n08pf.pdf

 0.34. Size:875K  oriental semi
 sfg280n08kf.pdf

 0.35. Size:825K  samwin
 swha80n08v1.pdf

SW80N08V1 N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 80V DFN5*6 High ruggedness ID 11A Low RDS(ON) (Typ 9.9m )@VGS=4.5V 1 8 (Typ 8.9m )@VGS=10V RDS(ON) 9.9m @VGS=4.5V 2 7 Low Gate Charge (Typ 79nC) 6 3 5 8.9m @VGS=10V 4 Improved dv/dt Capability 100% Avalanche Tested Application Synchronous Rectification,

 0.36. Size:771K  samwin
 swi80n08v1.pdf

SW80N08V1 N-channel Enhanced mode TO-251 MOSFET Features BVDSS 80V TO-251 High ruggedness ID 80A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 9m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 79nC) 9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 2 Application Synchronous Rectification, 2 3 Li Battery

 0.37. Size:785K  samwin
 swp80n08v1.pdf

SW80N08V1 N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 9m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 78nC) 9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 2 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter

 0.38. Size:925K  semihow
 hrp80n08k.pdf

December 2014 BVDSS = 80 V RDS(on) typ = 6.7m HRP80N08K ID = 120 A 80V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 60nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 6.7 m (Typ.)

 0.39. Size:168K  semihow
 hrs80n08k.pdf

December 2014 BVDSS = 80 V RDS(on) typ HRS80N08K ID = 120 A 80V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 60nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 6.7 (Typ.) @VGS=10V 100% Avalanche Test

 0.40. Size:579K  way-on
 wmm80n08ts.pdf

WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. G S Features TO-263 V = 80V, I = 80A DS D R

 0.41. Size:614K  way-on
 wmk80n08ts.pdf

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 80V, I = 80A DS D R

 0.42. Size:501K  way-on
 wmo80n08ts.pdf

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 80V, I = 80A DS D R

 0.43. Size:3622K  first semi
 fir80n08pg.pdf

FIR80N08PG N-Channel Enhancement Mode Power Mosfet-D PIN Connection TO-220 Description The FIR80N08PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =80V,ID =80A RDS(ON)

 0.44. Size:900K  cn hunteck
 hgi080n08sl hgd080n08sl.pdf

HGI080N08SL HGD080N08SL P-1 , 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level VGS=10V 6.3 RDS(on),typ m Enhanced Body diode dv/dt capability VGS=4.5V 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness 85 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free, Halogen Free Application

 0.45. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf

HGB080N08SL , HGP080N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 6.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 8.4 RDS(on),typ m Enhanced Avalanche Ruggedness 6.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 8.7 RDS(on),typ m Lead Free, Halogen

 0.46. Size:765K  cn hunteck
 hgn080n08sl.pdf

HGN080N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level VGS=10V 6.3 RDS(on),typ m Enhanced Body diode dv/dt capability VGS=4.5V 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness 85 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou

 0.47. Size:718K  winsok
 wsr80n08.pdf

WSR80N08 N-Ch MOSFET General Description Product Summery The WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80A the synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with

 0.48. Size:747K  cn vanguard
 vs80n08at.pdf

VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel 10V Logic Level Control I D 83 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS80N08AT TO-220AB 8

 0.49. Size:1613K  cn vbsemi
 vbzl80n08.pdf

VBZL80N08 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS 80 V Maximum 175 C junction temperature RDS(on) VGS = 10 V 6 m 100 % Rg and UIS tested RDS(on) VGS = 4.5 V m 10 Material categorization ID 120 A for definitions of compliance please see Configuration Single D TO-263 G S S S D D G G

 0.50. Size:377K  cn wuxi unigroup
 tmb80n08a.pdf

TMB80N08A Wuxi Unigroup Microelectronics Company 80V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninterru

 0.51. Size:670K  cn wuxi unigroup
 tmb80n08a tmp80n08a.pdf

TMB80N08A,TMP80N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 80V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V)

 0.52. Size:392K  cn si-tech
 s80n08r s80n08s s80n08rn s80n08rp.pdf

S80N08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=80V,ID=84A DC Motor Control Rds(on)(typ)=7m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D

 0.53. Size:988K  cn hmsemi
 hm80n08k.pdf

HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80V ID=

 0.54. Size:260K  inchange semiconductor
 isp80n08s2l.pdf

isc N-Channel MOSFET Transistor ISP80N08S2L FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R 7.1m (Max) DS(on) 175 C operating temperature Advanced trench process technology 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAX

 0.55. Size:218K  inchange semiconductor
 80n08a.pdf

isc N-Channel MOSFET Transistor 80N08A FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications Hard switched and high frequency c

 0.56. Size:1759K  cn apm
 ap180n08p ap180n08t.pdf

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS D R

 0.57. Size:3601K  cn apm
 ap80n08nf.pdf

AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R

 0.58. Size:2412K  cn apm
 ap80n08d.pdf

AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R