UTT120N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UTT120N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 585 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO-220

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UTT120N06 datasheet

 ..1. Size:127K  utc
 utt120n06.pdf pdf_icon

UTT120N06

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutati

 6.1. Size:128K  utc
 utt120n04.pdf pdf_icon

UTT120N06

UNISONIC TECHNOLOGIES CO., LTD UTT120N04 Preliminary Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum on-state resistance and high switching speed. FEATURES * RDS(ON)

 8.1. Size:125K  utc
 utt120p06.pdf pdf_icon

UTT120N06

UNISONIC TECHNOLOGIES CO., LTD UTT120P06 Preliminary Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and

 9.1. Size:280K  utc
 utt12p10.pdf pdf_icon

UTT120N06

UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

MOSTRAR MÁS

Otros transistores... UTT25P10, UTT50P10, UTT70P10, UTT80P06, UK4145, UTT100N06, UTT100N08, UTT10N10, IRF630, UTT150N06, UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, UTT50N06, UTT60N06