UTT36N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT36N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 36 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 180 nC
Tiempo de subida (tr): 868 nS
Conductancia de drenaje-sustrato (Cd): 171 pF
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: TO-220 TO-252 TO-220F
Búsqueda de reemplazo de MOSFET UTT36N10
UTT36N10 Datasheet (PDF)
utt36n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36N10 Power MOSFET 36A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36N10 is a N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT36N10 is suitable for high voltage synchronous rectifier and DC/DC converters, et
utt36n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for
utt36p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36P03 Preliminary Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT36P03 is suitable for low voltage
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