UTT60N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT60N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 200 nS
Cossⓘ - Capacitancia de salida: 520 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO-252 TO-220
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UTT60N10 Datasheet (PDF)
utt60n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT60N10 Preliminary Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable f
utt60n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) = 18m @VGS = 10 V * Fast s
utt60p03.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT60P03 Preliminary Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand high energy in the avalanche. This UTC UTT60P03 is suitable for switching
Otros transistores... UTT150N06 , UTT20N10 , UTT25N08 , UTT30N08 , UTT30N10 , UTT36N10 , UTT50N06 , UTT60N06 , IRFP260 , UTT6N10 , UTT75N08 , UTT75N75 , UTT80N06 , UTT80N08 , UTT80N75 , UDN302 , UT2301 .



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