UTT60N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT60N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 200 nS
Cossⓘ - Capacitancia de salida: 520 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Búsqueda de reemplazo de UTT60N10 MOSFET
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UTT60N10 datasheet
utt60n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT60N10 Preliminary Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable f
utt60n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) = 18m @VGS = 10 V * Fast s
utt60p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT60P03 Preliminary Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand high energy in the avalanche. This UTC UTT60P03 is suitable for switching
Otros transistores... UTT150N06, UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, UTT50N06, UTT60N06, AO3401, UTT6N10, UTT75N08, UTT75N75, UTT80N06, UTT80N08, UTT80N75, UDN302, UT2301
History: PE6W2EA
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