UTT80N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UTT80N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 137 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 1260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO-220 TO-220F1

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UTT80N08 Datasheet (PDF)

..1. Size:127K utc
utt80n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai

7.1. Size:201K utc
utt80n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U

7.2. Size:129K utc
utt80n05.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance, superior switching performanceand low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line

8.1. Size:127K utc
utt80n75.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTCs advanced technology to provide customers with a minimum 1on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge

8.2. Size:801K cn vbsemi
utt80n10.pdf

UTT80N10www.VBsemi.twN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.010 at VGS = 6 V85TO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise not

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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