UTT80N08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT80N08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 137 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 1260 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Búsqueda de reemplazo de UTT80N08 MOSFET
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UTT80N08 datasheet
utt80n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai
utt80n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U
utt80n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line
utt80n75.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC s advanced technology to provide customers with a minimum 1 on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge
Otros transistores... UTT36N10, UTT50N06, UTT60N06, UTT60N10, UTT6N10, UTT75N08, UTT75N75, UTT80N06, SKD502T, UTT80N75, UDN302, UT2301, UT2301Z, UT2305, UT2305A, UT2311, UT2321
History: NCEP50P80A
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