UT2308 Todos los transistores

 

UT2308 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT2308
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 2.7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 3.8 nC
   Tiempo de subida (tr): 55 nS
   Conductancia de drenaje-sustrato (Cd): 65 pF
   Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET UT2308

 

UT2308 Datasheet (PDF)

 ..1. Size:124K  utc
ut2308.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2308 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mountapplications and suited for low voltage application

 9.1. Size:300K  utc
ut2305a.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2305A Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 9.2. Size:183K  utc
ut2301.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications su

 9.3. Size:228K  utc
ut2301g-ae2-r ut2301g-ae3-r.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications s

 9.4. Size:229K  utc
ut2309.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT2309 is P-channel power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC

 9.5. Size:297K  utc
ut2305l-ae2-r ut2305g-ae2-r ut2305l-ae3-r ut2305g-ae3-r ut2305l-al3-r ut2305g-ag3-r.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve

 9.6. Size:297K  utc
ut2305.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve

 9.7. Size:236K  utc
ut2306.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2306 is N-channel power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mountapplications and suited for low voltage applications such as

 9.8. Size:269K  utc
ut2302.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications andsuited for low voltage applications such as

 9.9. Size:211K  utc
ut2304.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2304 Power MOSFET N-CHANNEL ENHANCEMENT MODE 331 12 2 DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve SOT-23-3 SOT-23 (JEDEC TO-236) (EIAJ SC-59)the lowest possible on-resistance, extremely and cost- effectiveness device by using advanced trench technology. SYMBOL Drain1SOT-89GateSource ORDERING IN

 9.10. Size:294K  utc
ut2305g-ae2-r ut2305g-ae3-r ut2305g-ag3-r.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve

 9.11. Size:159K  utc
ut2301z.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorablestabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC co

 9.12. Size:288K  utc
ut2302g-ae2-r ut2302g-ae3-r.pdf

UT2308
UT2308

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applicationsand suited for low voltage applications such a

 9.13. Size:794K  cn vbsemi
ut2301g-ae3-r.pdf

UT2308
UT2308

UT2301G-AE3-Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC

 9.14. Size:1511K  cn vbsemi
ut2302g-ae3.pdf

UT2308
UT2308

UT2302G-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 9.15. Size:911K  cn vbsemi
ut2302l-ae3.pdf

UT2308
UT2308

UT2302L-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

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