UT2312 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT2312

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT-23

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UT2312 datasheet

 ..1. Size:155K  utc
 ut2312.pdf pdf_icon

UT2312

UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 m @VGS = 4.5 V * RDS(ON) = 40 m @VGS = 2

 9.1. Size:192K  utc
 ut2311.pdf pdf_icon

UT2312

UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UT2311L-

 9.2. Size:199K  utc
 ut2316.pdf pdf_icon

UT2312

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 9.3. Size:175K  utc
 ut2316g-ae2-r ut2316g-ae3-r.pdf pdf_icon

UT2312

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

MOSTRAR MÁS

Otros transistores... UK3019, UK3919, UML2502, UP9T15G, UT2302, UT2304, UT2306, UT2308, 10N65, UT2316, UT3055, UT3400, UT3404, UT3406, UT3414, UT3416, UT3418