UTT36P03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT36P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Búsqueda de reemplazo de UTT36P03 MOSFET
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UTT36P03 datasheet
utt36p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36P03 Preliminary Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT36P03 is suitable for low voltage
utt36n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36N10 Power MOSFET 36A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT36N10 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT36N10 is suitable for high voltage synchronous rectifier and DC/DC converters, et
utt36n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for
Otros transistores... UT7401, UT9435, UT9435H, UT9435HZ, UTC654, UTD405, UTR4502, UTT100P03, IRF1404, UTT4407, UTT4425, UTT4815, UTT60P03, BSS84Z, UT30P04, UT3P06, UT5504
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