UTT60P03 Todos los transistores

 

UTT60P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UTT60P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 190 nC
   Tiempo de subida (tr): 75 nS
   Conductancia de drenaje-sustrato (Cd): 1500 pF
   Resistencia entre drenaje y fuente RDS(on): 0.027 Ohm
   Paquete / Cubierta: TO-252

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UTT60P03 Datasheet (PDF)

 ..1. Size:163K  utc
utt60p03.pdf

UTT60P03
UTT60P03

UNISONIC TECHNOLOGIES CO., LTD UTT60P03 Preliminary Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand high energy in the avalanche. This UTC UTT60P03 is suitable for switching

 9.1. Size:147K  utc
utt60n10.pdf

UTT60P03
UTT60P03

UNISONIC TECHNOLOGIES CO., LTD UTT60N10 Preliminary Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable f

 9.2. Size:364K  utc
utt60n06.pdf

UTT60P03
UTT60P03

UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) = 18m @VGS = 10 V * Fast s

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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