UTT60P03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UTT60P03  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 75 nS

Cossⓘ - Capacitancia de salida: 1500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO-252

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UTT60P03 datasheet

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UTT60P03

UNISONIC TECHNOLOGIES CO., LTD UTT60P03 Preliminary Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand high energy in the avalanche. This UTC UTT60P03 is suitable for switching

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UTT60P03

UNISONIC TECHNOLOGIES CO., LTD UTT60N10 Preliminary Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable f

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UTT60P03

UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) = 18m @VGS = 10 V * Fast s

Otros transistores... UTC654, UTD405, UTR4502, UTT100P03, UTT36P03, UTT4407, UTT4425, UTT4815, IRFZ44, BSS84Z, UT30P04, UT3P06, UT5504, UT9564, UTD413, UTT15P06, UTT18P06