UM6K31N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UM6K31N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 4.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm

Encapsulados: SOT-363

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UM6K31N datasheet

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UM6K31N

2.5V Drive Nch + Nch MOSFET UM6K31N Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT6 (SC-88) Features 1) High speed switing. (6) (5) (4) 2) Small package(UMT6). 3) Low voltage drive(2.5V drive). (1) (2) (3) Application Switching Abbreviated symbol K31 Packaging specifications Inner circuit (6) (5) (4) Package Tap

 ..2. Size:160K  utc
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UM6K31N

UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR 4 5 6 DESCRIPTION 3 The UTC UM6K31N is a silicon N-channel MOS Field Effect 2 1 Transistor. It can be used in switching applications. SOT-363 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 UM6K31NL-

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UM6K31N

V 2.5

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 um6k34n.pdf pdf_icon

UM6K31N

Data Sheet 0.9V Drive Nch + Nch MOSFET UM6K34N Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT6 (SC-88) (6) (5) (4) Features 1) Mounting cost and area can be cut in half. 2) Low On-resistance. (1) (2) (3) 3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment. Abbreviated symbol K34 Application Interfacing, Switching

MOSTRAR MÁS

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